Masayuki ISHIBASHI

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon epitaxial wafer production method and silicon epitaxial wafer
- Patent number 11,990,336
- Issue date May 21, 2024
- Sumco Corporation
- Masayuki Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial growth method
- Patent number 9,518,339
- Issue date Dec 13, 2016
- Sumco Corporation
- Masayuki Ishibashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Epitaxial growth method
- Patent number 9,127,374
- Issue date Sep 8, 2015
- Sumco Corporation
- Masayuki Ishibashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Susceptor for vapor phase epitaxial growth device
- Patent number 9,017,483
- Issue date Apr 28, 2015
- Sumco Corporation
- Takashi Fujikawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing silicon epitaxial wafer
- Patent number 8,999,061
- Issue date Apr 7, 2015
- Sumco Corporation
- Masayuki Ishibashi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for manufacturing epitaxial wafer and wafer holder used in t...
- Patent number 8,980,001
- Issue date Mar 17, 2015
- Sumco Corporation
- Masaya Sakurai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Epitaxial growth susceptor
- Patent number 8,926,754
- Issue date Jan 6, 2015
- Sumitomo Mitsubishi Silicon Corporation
- Masayuki Ishibashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon epitaxial wafer and method for production thereof
- Patent number 8,815,710
- Issue date Aug 26, 2014
- Sumco Corporation
- Masayuki Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vapor-phase epitaxial growth method
- Patent number 6,971,835
- Issue date Dec 6, 2005
- Sumitomo Mitsubishi Silicon Corporation
- Masayuki Ishibashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
SILICON EPITAXIAL WAFER PRODUCTION METHOD AND SILICON EPITAXIAL WAFER
- Publication number 20220020585
- Publication date Jan 20, 2022
- SUMCO CORPORATION
- Masayuki ISHIBASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL GROWTH METHOD
- Publication number 20150114282
- Publication date Apr 30, 2015
- SUMCO CORPORATION
- Masayuki ISHIBASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL GROWTH METHOD
- Publication number 20150107511
- Publication date Apr 23, 2015
- SUMCO CORPORATION
- Masayuki ISHIBASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SILICON EPITAXIAL WAFER
- Publication number 20120090536
- Publication date Apr 19, 2012
- SUMCO CORPORATION
- Masayuki Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING EPITAXIAL WAFER AND WAFER HOLDER USED IN T...
- Publication number 20110114014
- Publication date May 19, 2011
- SUMCO CORPORATION
- Masaya Sakurai
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON EPITAXIAL WAFER AND METHOD FOR PRODUCTION THEREOF
- Publication number 20110031592
- Publication date Feb 10, 2011
- SUMCO CORPORATION
- Masayuki Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Application
Epitaxial growth susceptor
- Publication number 20090314210
- Publication date Dec 24, 2009
- Masayuki Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Application
SUSCEPTOR FOR VAPOR PHASE EPITAXIAL GROWTH DEVICE
- Publication number 20090235867
- Publication date Sep 24, 2009
- SUMCO CORPORATION
- Takashi FUJIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
Susceptor For Vapor-Phase Growth Reactor
- Publication number 20080110401
- Publication date May 15, 2008
- SUMCO CORPORATION
- Takashi Fujikawa
- C30 - CRYSTAL GROWTH
Information Patent Application
Susceptor for epitaxial growth and epitaxial growth method
- Publication number 20050000449
- Publication date Jan 6, 2005
- Masayuki Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Application
Vapor-phase epitaxial growth method
- Publication number 20030119283
- Publication date Jun 26, 2003
- Masayuki Ishibashi
- C30 - CRYSTAL GROWTH

Masayuki ISHIBASHI

Person

Patents Grantslast 30 patents

Silicon epitaxial wafer production method and silicon epitaxial wafer

Epitaxial growth method

Epitaxial growth method

Susceptor for vapor phase epitaxial growth device

Method for producing silicon epitaxial wafer

Method for manufacturing epitaxial wafer and wafer holder used in t...

Epitaxial growth susceptor

Silicon epitaxial wafer and method for production thereof

Vapor-phase epitaxial growth method

Patents Applicationslast 30 patents

SILICON EPITAXIAL WAFER PRODUCTION METHOD AND SILICON EPITAXIAL WAFER

EPITAXIAL GROWTH METHOD

EPITAXIAL GROWTH METHOD

METHOD FOR PRODUCING SILICON EPITAXIAL WAFER

METHOD FOR MANUFACTURING EPITAXIAL WAFER AND WAFER HOLDER USED IN T...

SILICON EPITAXIAL WAFER AND METHOD FOR PRODUCTION THEREOF

Epitaxial growth susceptor

SUSCEPTOR FOR VAPOR PHASE EPITAXIAL GROWTH DEVICE

Susceptor For Vapor-Phase Growth Reactor

Susceptor for epitaxial growth and epitaxial growth method

Vapor-phase epitaxial growth method