Masayuki Sagoi

Person

Yokohama, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetoresistive element and magnetic memory device
- Patent number 7,593,193
- Issue date Sep 22, 2009
- Kabushiki Kaisha Toshiba
- Koichiro Inomata
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory device
- Patent number 7,345,852
- Issue date Mar 18, 2008
- Kabushiki Kaisha Toshiba
- Koichiro Inomata
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing a magnetoresistance effect device
- Patent number 7,140,096
- Issue date Nov 28, 2006
- Kabushiki Kaisha Toshiba
- Tatsuya Kishi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory device
- Patent number 7,038,894
- Issue date May 2, 2006
- Kabushiki Kaisha Toshiba
- Koichiro Inomata
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device having memory cells including ferromagn...
- Patent number 7,035,137
- Issue date Apr 25, 2006
- Kabushiki Kaisha Toshiba
- Yoshihisa Iwata
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferromagnetic double tunnel junction element with asymmetric energy...
- Patent number 6,995,962
- Issue date Feb 7, 2006
- Kabushiki Kaisha Toshiba
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory device
- Patent number 6,987,653
- Issue date Jan 17, 2006
- Kabushiki Kaisha Toshiba
- Koichiro Inomata
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory with reduced write current
- Patent number 6,868,002
- Issue date Mar 15, 2005
- Kabushiki Kaisha Toshiba
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferromagnetic double tunnel junction element with asymmetric energy...
- Patent number 6,839,206
- Issue date Jan 4, 2005
- Kabushiki Kaisha Toshiba
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory having antiferromagnetically coupled recording layer
- Patent number 6,751,074
- Issue date Jun 15, 2004
- Kabushiki Kaisha Toshiba
- Koichiro Inomata
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect device
- Patent number 6,730,949
- Issue date May 4, 2004
- Kabushiki Kaisha Toshiba
- Tatsuya Kishi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory with reduced write current
- Patent number 6,707,711
- Issue date Mar 16, 2004
- Kabushiki Kaisha Toshiba
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory device
- Patent number 6,611,405
- Issue date Aug 26, 2003
- Kabushiki Kaisha Toshiba
- Koichiro Inomata
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect device, magnetic memory apparatus, persona...
- Patent number 6,605,836
- Issue date Aug 12, 2003
- Kabushiki Kaisha Toshiba
- Tatsuya Kishi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device
- Patent number 6,590,803
- Issue date Jul 8, 2003
- Kabushiki Kaisha Toshiba
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory with reduced write current
- Patent number 6,556,473
- Issue date Apr 29, 2003
- Kabushiki Kaisha Toshiba
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device
- Patent number 6,473,336
- Issue date Oct 29, 2002
- Kabushiki Kaisha Toshiba
- Kentaro Nakajima
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for manufacturing an oxide superconducting thin-film
- Patent number 5,126,320
- Issue date Jun 30, 1992
- Kabushiki Kaisha Toshiba
- Tadao Miura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Perpendicular magnetic recording floppy disk
- Patent number 4,801,481
- Issue date Jan 31, 1989
- Tokyo Shibaura Denki Kabushiki Kaisha
- Masayuki Sagoi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic recording medium
- Patent number 4,761,334
- Issue date Aug 2, 1988
- Kabushiki Kaisha Toshiba
- Masayuki Sagoi
- G11 - INFORMATION STORAGE
Information Patent Grant
Perpendicular magnetic recording medium with multilayered protectiv...
- Patent number 4,748,073
- Issue date May 31, 1988
- Kabushiki Kaisha Toshiba
- Masayuki Sagoi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic recording medium
- Patent number 4,701,374
- Issue date Oct 20, 1987
- Kabushiki Kaisha Toshiba
- Masayuki Sagoi
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing perpendicular magnetic recording floppy disk
- Patent number 4,680,197
- Issue date Jul 14, 1987
- Kabushiki Kaisha Toshiba
- Masayuki Sagoi
- G11 - INFORMATION STORAGE
Information Patent Grant
Perpendicular magnetic-recording medium
- Patent number 4,629,660
- Issue date Dec 16, 1986
- Tokyo Shibaura Denki Kabushiki Kaisha
- Masayuki Sagoi
- G11 - INFORMATION STORAGE
Information Patent Grant
Titanium-based alloy having high mechanical strength
- Patent number 4,253,873
- Issue date Mar 3, 1981
- Tokyo Shibaura Denki Kabushiki Kaisha
- Masayuki Sagoi
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...

Patents Applicationslast 30 patents

Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY DEVICE
- Publication number 20070297101
- Publication date Dec 27, 2007
- Koichiro Inomata
- G01 - MEASURING TESTING
Information Patent Application
Magnetoresistive element and magnetic memory device
- Publication number 20060146451
- Publication date Jul 6, 2006
- KABUSHI KAISHA TOSHIBA
- Koichiro Inomata
- G01 - MEASURING TESTING
Information Patent Application
Magnetoresistive element and magnetic memory device
- Publication number 20050185347
- Publication date Aug 25, 2005
- KABUSHI KAISHA TOSHIBA
- Koichiro Inomata
- G01 - MEASURING TESTING
Information Patent Application
Magnetoresistance effect device, method of manufacturing the same,...
- Publication number 20050078417
- Publication date Apr 14, 2005
- Kabushiki Kaisha Toshiba
- Tatsuya Kishi
- G11 - INFORMATION STORAGE
Information Patent Application
Ferromagnetic double tunnel junction element with asymmetric energy...
- Publication number 20050078418
- Publication date Apr 14, 2005
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor memory device having memory cells including ferromagn...
- Publication number 20050036362
- Publication date Feb 17, 2005
- Yoshihisa Iwata
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive element and magnetic memory device
- Publication number 20040175596
- Publication date Sep 9, 2004
- KABUSHIKI KAISHA TOSHIBA
- Koichiro Inomata
- G01 - MEASURING TESTING
Information Patent Application
Magnetic memory
- Publication number 20040156231
- Publication date Aug 12, 2004
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic memory device with divided write wirings
- Publication number 20040109349
- Publication date Jun 10, 2004
- Kentaro Nakajima
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive element and magnetic memory device
- Publication number 20030197984
- Publication date Oct 23, 2003
- KABUSHIKI KAISHA TOSHIBA
- Koichiro Inomata
- G01 - MEASURING TESTING
Information Patent Application
Magnetic memory
- Publication number 20030137870
- Publication date Jul 24, 2003
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistance effect device
- Publication number 20020191451
- Publication date Dec 19, 2002
- Kabushiki Kaisha Toshiba
- Tatsuya Kishi
- B82 - NANO-TECHNOLOGY
Information Patent Application
Magnetoresistance effect element
- Publication number 20020159203
- Publication date Oct 31, 2002
- Yoshiaki Saito
- B82 - NANO-TECHNOLOGY
Information Patent Application
Magnetic memory device
- Publication number 20020141232
- Publication date Oct 3, 2002
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistance effect device, method of manufacturing the same,...
- Publication number 20020130339
- Publication date Sep 19, 2002
- Kabushiki Kaisha Toshiba
- Tatsuya Kishi
- B82 - NANO-TECHNOLOGY
Information Patent Application
Magnetic memory
- Publication number 20020034094
- Publication date Mar 21, 2002
- Yoshiaki Saito
- B82 - NANO-TECHNOLOGY
Information Patent Application
Magnetic memory device
- Publication number 20020006058
- Publication date Jan 17, 2002
- Kentaro Nakajima
- H01 - BASIC ELECTRIC ELEMENTS

Masayuki Sagoi

Person

Patents Grantslast 30 patents

Magnetoresistive element and magnetic memory device

Magnetoresistive element and magnetic memory device

Method of manufacturing a magnetoresistance effect device

Magnetoresistive element and magnetic memory device

Semiconductor memory device having memory cells including ferromagn...

Ferromagnetic double tunnel junction element with asymmetric energy...

Magnetoresistive element and magnetic memory device

Magnetic memory with reduced write current

Ferromagnetic double tunnel junction element with asymmetric energy...

Magnetic memory having antiferromagnetically coupled recording layer

Magnetoresistance effect device

Magnetic memory with reduced write current

Magnetoresistive element and magnetic memory device

Magnetoresistance effect device, magnetic memory apparatus, persona...

Magnetic memory device

Magnetic memory with reduced write current

Magnetic memory device

Method for manufacturing an oxide superconducting thin-film

Perpendicular magnetic recording floppy disk

Magnetic recording medium

Perpendicular magnetic recording medium with multilayered protectiv...

Magnetic recording medium

Method of manufacturing perpendicular magnetic recording floppy disk

Perpendicular magnetic-recording medium

Titanium-based alloy having high mechanical strength

Patents Applicationslast 30 patents

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY DEVICE

Magnetoresistive element and magnetic memory device

Magnetoresistive element and magnetic memory device

Magnetoresistance effect device, method of manufacturing the same,...

Ferromagnetic double tunnel junction element with asymmetric energy...

Semiconductor memory device having memory cells including ferromagn...

Magnetoresistive element and magnetic memory device

Magnetic memory

Magnetic memory device with divided write wirings

Magnetoresistive element and magnetic memory device

Magnetic memory

Magnetoresistance effect device

Magnetoresistance effect element

Magnetic memory device

Magnetoresistance effect device, method of manufacturing the same,...

Magnetic memory

Magnetic memory device