Matthew J. Breitwisch

Person

Pound Ridge, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Uniform critical dimension size pore for PCRAM application
- Patent number 9,166,165
- Issue date Oct 20, 2015
- International Business Machines Corporation
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned lower bottom electrode
- Patent number 9,059,394
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermally confined electrode for programmable resistance memory
- Patent number 8,987,700
- Issue date Mar 24, 2015
- Macronix International Co., Ltd.
- Sheng-Chih Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ge-Rich GST-212 phase change memory materials
- Patent number 8,946,666
- Issue date Feb 3, 2015
- Macronix International Co., Ltd.
- Huai-Yu Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory programming for a phase change memory cell
- Patent number 8,897,062
- Issue date Nov 25, 2014
- International Business Machines Corporation
- Matthew J. Breitwisch
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory cell array with self-converged bottom electrode...
- Patent number 8,860,111
- Issue date Oct 14, 2014
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned fin-type programmable memory cell
- Patent number 8,853,047
- Issue date Oct 7, 2014
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Small footprint phase change memory cell
- Patent number 8,809,828
- Issue date Aug 19, 2014
- International Business Machines Corporation
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite target sputtering for forming doped phase change materials
- Patent number 8,772,747
- Issue date Jul 8, 2014
- Macronix International Co., Ltd.
- Huai-Yu Cheng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Self aligned fin-type programmable memory cell
- Patent number 8,729,521
- Issue date May 20, 2014
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Small footprint phase change memory cell
- Patent number 8,728,859
- Issue date May 20, 2014
- International Business Machines Corporation
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to tailor location of peak electric field directly underneat...
- Patent number 8,716,759
- Issue date May 6, 2014
- International Business Machines Corporation
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pore phase change material cell fabricated from recessed pillar
- Patent number 8,686,391
- Issue date Apr 1, 2014
- International Business Machines Corporation
- Alejandro G. Schrott
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory electrode with sheath for reduced programming c...
- Patent number 8,648,326
- Issue date Feb 11, 2014
- International Business Machines Corporation
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In via formed phase change memory cell with recessed pillar heater
- Patent number 8,633,464
- Issue date Jan 21, 2014
- International Business Machines Corporation
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Area efficient neuromorphic system that connects a FET in a diode c...
- Patent number 8,589,320
- Issue date Nov 19, 2013
- International Business Machines Corporation
- Matthew J. Breitwisch
- G11 - INFORMATION STORAGE
Information Patent Grant
Thermally insulated phase change material memory cells
- Patent number 8,536,675
- Issue date Sep 17, 2013
- International Business Machines Corporation
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chemical mechanical polishing stop layer for fully amorphous phase...
- Patent number 8,492,194
- Issue date Jul 23, 2013
- International Business Machines Corporation
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flat lower bottom electrode for phase change memory cell
- Patent number 8,471,236
- Issue date Jun 25, 2013
- International Business Machines Corporation
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermally insulated phase material cells
- Patent number 8,466,006
- Issue date Jun 18, 2013
- International Business Machines Corporation
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a self-aligned bit line for PCRAM and self-align...
- Patent number 8,445,313
- Issue date May 21, 2013
- International Business Machines Corporatoin
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System for electronic learning synapse with spike-timing dependent...
- Patent number 8,447,714
- Issue date May 21, 2013
- International Business Machines Corporation
- Matthew Joseph Breitwisch
- G11 - INFORMATION STORAGE
Information Patent Grant
Composite target sputtering for forming doped phase change materials
- Patent number 8,426,242
- Issue date Apr 23, 2013
- Macronix International Co., Ltd.
- Huai-Yu Cheng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Single mask adder phase change memory element
- Patent number 8,415,653
- Issue date Apr 9, 2013
- International Business Machines Corporation
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single mask adder phase change memory element
- Patent number 8,395,192
- Issue date Mar 12, 2013
- International Business Machines Corporation
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor arrays and methods for fabrication...
- Patent number 8,383,501
- Issue date Feb 26, 2013
- International Business Machines Corporation
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory random access device using single-element phase...
- Patent number 8,378,328
- Issue date Feb 19, 2013
- International Business Machines Corporation
- Matthew J. Breitwisch
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory having one or more non-constant doping profiles
- Patent number 8,363,463
- Issue date Jan 29, 2013
- Macronix International Co., Ltd.
- Yen-Hao Shih
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory device with plated phase change material
- Patent number 8,344,351
- Issue date Jan 1, 2013
- International Business Machines Corporation
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to reduce a via area in a phase change memory cell
- Patent number 8,338,225
- Issue date Dec 25, 2012
- International Business Machines Corporation
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELF ALIGNED FIN-TYPE PROGRAMMABLE MEMORY CELL
- Publication number 20140256110
- Publication date Sep 11, 2014
- International Business Machines Corporation
- HSIANG-LAN LUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SMALL FOOTPRINT PHASE CHANGE MEMORY CELL
- Publication number 20140166967
- Publication date Jun 19, 2014
- Macronix International Co., Ltd.
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIFORM CRITICAL DIMENSION SIZE PORE FOR PCRAM APPLICATION
- Publication number 20140154862
- Publication date Jun 5, 2014
- Macronix International Co., Ltd.
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO TAILOR LOCATION OF PEAK ELECTRIC FIELD DIRECTLY UNDERNEAT...
- Publication number 20130295742
- Publication date Nov 7, 2013
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE TARGET SPUTTERING FOR FORMING DOPED PHASE CHANGE MATERIALS
- Publication number 20130234093
- Publication date Sep 12, 2013
- International Business Machines Corporation
- HUAI-YU CHENG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
THERMALLY CONFINED ELECTRODE FOR PROGRAMMABLE RESISTANCE MEMORY
- Publication number 20130140513
- Publication date Jun 6, 2013
- Sheng-Chih Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY ELECTRODE WITH SHEATH FOR REDUCED PROGRAMMING C...
- Publication number 20130026436
- Publication date Jan 31, 2013
- International Business Machines Corporation
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Compressive Structure for Enhancing Contact of Phase Change Materia...
- Publication number 20130001499
- Publication date Jan 3, 2013
- International Business Machines Corporation
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PORE PHASE CHANGE MATERIAL CELL FABRICATED FROM RECESSED PILLAR
- Publication number 20130001500
- Publication date Jan 3, 2013
- International Business Machines Corporation
- Alejandro G. Schrott
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AREA EFFICIENT NEUROMORPHIC SYSTEM
- Publication number 20120284217
- Publication date Nov 8, 2012
- International Business Machines Corporation
- Matthew J. Breitwisch
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FLAT LOWER BOTTOM ELECTRODE FOR PHASE CHANGE MEMORY CELL
- Publication number 20120280197
- Publication date Nov 8, 2012
- MACRONIX INTERNATIONAL COMPANY, LTD.
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A SELF-ALIGNED BIT LINE FOR PCRAM AND SELF-ALIGN...
- Publication number 20120276688
- Publication date Nov 1, 2012
- Macronix International Co., Ltd.
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A SELF-ALIGNED BIT LINE FOR PCRAM AND SELF-ALIGN...
- Publication number 20120202333
- Publication date Aug 9, 2012
- Macronix International Co., Ltd.
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY CELL ARRAY WITH SELF-CONVERGED BOTTOM ELECTRODE...
- Publication number 20120193599
- Publication date Aug 2, 2012
- International Business Machines Corporation
- Hsiang-Lan Lung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE TARGET SPUTTERING FOR FORMING DOPED PHASE CHANGE MATERIALS
- Publication number 20120193595
- Publication date Aug 2, 2012
- International Business Machines Corporation
- Huai-Yu Cheng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD TO TAILOR LOCATION OF PEAK ELECTRIC FIELD DIRECTLY UNDERNEAT...
- Publication number 20120181627
- Publication date Jul 19, 2012
- International Business Machines Corporation
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO TAILOR LOCATION OF PEAK ELECTRIC FIELD DIRECTLY UNDERNEAT...
- Publication number 20120181628
- Publication date Jul 19, 2012
- International Business Machines Corporation
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE MASK ADDER PHASE CHANGE MEMORY ELEMENT
- Publication number 20120168709
- Publication date Jul 5, 2012
- International Business Machines Corporation
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED LOWER BOTTOM ELECTRODE
- Publication number 20120139119
- Publication date Jun 7, 2012
- International Business Machines Corporation
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMALLY INSULATED PHASE MATERIAL CELLS
- Publication number 20120129313
- Publication date May 24, 2012
- International Business Machines Corporation
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMALLY INSULATED PHASE CHANGE MATERIAL MEMORY CELLS
- Publication number 20120126194
- Publication date May 24, 2012
- International Business Machines Corporation
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO REDUCE A VIA AREA IN A PHASE CHANGE MEMORY CELL
- Publication number 20120115302
- Publication date May 10, 2012
- International Business Machines Corporation
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN VIA FORMED PHASE CHANGE MEMORY CELL WITH RECESSED PILLAR HEATER
- Publication number 20120112154
- Publication date May 10, 2012
- International Business Machines Corporation
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ONE-MASK PHASE CHANGE MEMORY PROCESS INTEGRATION
- Publication number 20120037877
- Publication date Feb 16, 2012
- Macronix International Co., Ltd.
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BIT LINE UNDER WORD LINE MEMORY ARRAY
- Publication number 20110305074
- Publication date Dec 15, 2011
- International Business Machines Corporation
- Hsiang-Lan Lung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF ALIGNED FIN-TYPE PROGRAMMABLE MEMORY CELL
- Publication number 20110278528
- Publication date Nov 17, 2011
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR ARRAYS AND METHODS FOR FABRICATION...
- Publication number 20110275209
- Publication date Nov 10, 2011
- International Business Machines Corporation
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY DEVICE WITH PLATED PHASE CHANGE MATERIAL
- Publication number 20110240944
- Publication date Oct 6, 2011
- International Business Machines Corporation
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY PROGRAMMING
- Publication number 20110228600
- Publication date Sep 22, 2011
- International Business Machines Corporation
- Matthew J. Breitwisch
- G11 - INFORMATION STORAGE
Information Patent Application
CHEMICAL MECHANICAL POLISHING STOP LAYER FOR FULLY AMORPHOUS PHASE...
- Publication number 20110210307
- Publication date Sep 1, 2011
- International Business Machines Corporation
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS

Matthew J. Breitwisch

Person

Patents Grantslast 30 patents

Uniform critical dimension size pore for PCRAM application

Self-aligned lower bottom electrode

Thermally confined electrode for programmable resistance memory

Ge-Rich GST-212 phase change memory materials

Memory programming for a phase change memory cell

Phase change memory cell array with self-converged bottom electrode...

Self aligned fin-type programmable memory cell

Small footprint phase change memory cell

Composite target sputtering for forming doped phase change materials

Self aligned fin-type programmable memory cell

Small footprint phase change memory cell

Method to tailor location of peak electric field directly underneat...

Pore phase change material cell fabricated from recessed pillar

Phase change memory electrode with sheath for reduced programming c...

In via formed phase change memory cell with recessed pillar heater

Area efficient neuromorphic system that connects a FET in a diode c...

Thermally insulated phase change material memory cells

Chemical mechanical polishing stop layer for fully amorphous phase...

Flat lower bottom electrode for phase change memory cell

Thermally insulated phase material cells

Method for forming a self-aligned bit line for PCRAM and self-align...

System for electronic learning synapse with spike-timing dependent...

Composite target sputtering for forming doped phase change materials

Single mask adder phase change memory element

Single mask adder phase change memory element

Vertical field effect transistor arrays and methods for fabrication...

Phase change memory random access device using single-element phase...

Phase change memory having one or more non-constant doping profiles

Phase change memory device with plated phase change material

Method to reduce a via area in a phase change memory cell

Patents Applicationslast 30 patents

SELF ALIGNED FIN-TYPE PROGRAMMABLE MEMORY CELL

SMALL FOOTPRINT PHASE CHANGE MEMORY CELL

UNIFORM CRITICAL DIMENSION SIZE PORE FOR PCRAM APPLICATION

METHOD TO TAILOR LOCATION OF PEAK ELECTRIC FIELD DIRECTLY UNDERNEAT...

COMPOSITE TARGET SPUTTERING FOR FORMING DOPED PHASE CHANGE MATERIALS

THERMALLY CONFINED ELECTRODE FOR PROGRAMMABLE RESISTANCE MEMORY

PHASE CHANGE MEMORY ELECTRODE WITH SHEATH FOR REDUCED PROGRAMMING C...

Compressive Structure for Enhancing Contact of Phase Change Materia...

PORE PHASE CHANGE MATERIAL CELL FABRICATED FROM RECESSED PILLAR

AREA EFFICIENT NEUROMORPHIC SYSTEM

FLAT LOWER BOTTOM ELECTRODE FOR PHASE CHANGE MEMORY CELL

METHOD FOR FORMING A SELF-ALIGNED BIT LINE FOR PCRAM AND SELF-ALIGN...

METHOD FOR FORMING A SELF-ALIGNED BIT LINE FOR PCRAM AND SELF-ALIGN...

PHASE CHANGE MEMORY CELL ARRAY WITH SELF-CONVERGED BOTTOM ELECTRODE...

COMPOSITE TARGET SPUTTERING FOR FORMING DOPED PHASE CHANGE MATERIALS

METHOD TO TAILOR LOCATION OF PEAK ELECTRIC FIELD DIRECTLY UNDERNEAT...

METHOD TO TAILOR LOCATION OF PEAK ELECTRIC FIELD DIRECTLY UNDERNEAT...

SINGLE MASK ADDER PHASE CHANGE MEMORY ELEMENT

SELF-ALIGNED LOWER BOTTOM ELECTRODE

THERMALLY INSULATED PHASE MATERIAL CELLS

THERMALLY INSULATED PHASE CHANGE MATERIAL MEMORY CELLS

METHOD TO REDUCE A VIA AREA IN A PHASE CHANGE MEMORY CELL

IN VIA FORMED PHASE CHANGE MEMORY CELL WITH RECESSED PILLAR HEATER

ONE-MASK PHASE CHANGE MEMORY PROCESS INTEGRATION

SELF-ALIGNED BIT LINE UNDER WORD LINE MEMORY ARRAY

SELF ALIGNED FIN-TYPE PROGRAMMABLE MEMORY CELL

VERTICAL FIELD EFFECT TRANSISTOR ARRAYS AND METHODS FOR FABRICATION...

PHASE CHANGE MEMORY DEVICE WITH PLATED PHASE CHANGE MATERIAL

MEMORY PROGRAMMING

CHEMICAL MECHANICAL POLISHING STOP LAYER FOR FULLY AMORPHOUS PHASE...