Matthew J. BrightSky

Person

Pound Ridge, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Fill-in confined cell PCM devices
- Patent number 12,004,434
- Issue date Jun 4, 2024
- International Business Machines Corporation
- Praneet Adusumilli
Information Patent Grant
Multi-layer phase change memory device
- Patent number 11,889,773
- Issue date Jan 30, 2024
- International Business Machines Corporation
- Kevin W. Brew
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Reactivation of a deposited metal liner
- Patent number 11,723,293
- Issue date Aug 8, 2023
- International Business Machines Corporation
- Robert L. Bruce
Information Patent Grant
Phase change memory cell with a thermal barrier layer
- Patent number 11,647,683
- Issue date May 9, 2023
- International Business Machines Corporation
- Matthew Joseph BrightSky
Information Patent Grant
Multi-layer phase change memory device
- Patent number 11,621,394
- Issue date Apr 4, 2023
- International Business Machines Corporation
- Kevin W. Brew
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
3D stackable bidirectional access device for memory array
- Patent number 11,562,931
- Issue date Jan 24, 2023
- International Business Machines Corporation
- Fabio Carta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pulsing synaptic devices based on phase-change memory to increase t...
- Patent number 11,557,343
- Issue date Jan 17, 2023
- International Business Machines Corporation
- Fabio Carta
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Multi-level cell threshold voltage operation of one-selector-one-re...
- Patent number 11,557,342
- Issue date Jan 17, 2023
- International Business Machines Corporation
- Nanbo Gong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated phase change memory cell projection liner and etch stop...
- Patent number 11,456,417
- Issue date Sep 27, 2022
- International Business Machines Corporation
- Kevin W. Brew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-sided liner PCM cell for 3D crossbar PCM memory
- Patent number 11,355,706
- Issue date Jun 7, 2022
- International Business Machines Corporation
- Robert L. Bruce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated reactive material erasure element with phase change memory
- Patent number 11,257,866
- Issue date Feb 22, 2022
- International Business Machines Corporation
- Matthew J. BrightSky
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-level cell threshold voltage operation of one-selector-one-re...
- Patent number 11,139,025
- Issue date Oct 5, 2021
- International Business Machines Corporation
- Nanbo Gong
- G11 - INFORMATION STORAGE
Information Patent Grant
Crosspoint phase change memory with crystallized silicon diode acce...
- Patent number 10,971,546
- Issue date Apr 6, 2021
- International Business Machines Corporation
- Fabio Carta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystallized silicon vertical diode on BEOL for access device for c...
- Patent number 10,930,705
- Issue date Feb 23, 2021
- International Business Machines Corporation
- Fabio Carta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective phase change material growth in high aspect ratio dielect...
- Patent number 10,886,464
- Issue date Jan 5, 2021
- International Business Machines Corporation
- Matthew J. BrightSky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory array with integrated polycrystalline diodes
- Patent number 10,833,123
- Issue date Nov 10, 2020
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar switching operation of confined phase change memory for a m...
- Patent number 10,825,514
- Issue date Nov 3, 2020
- International Business Machines Corporation
- Wanki Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composition control of chemical vapor deposition nitrogen doped ger...
- Patent number 10,808,316
- Issue date Oct 20, 2020
- International Business Machines Corporation
- Fabio Carta
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing phase change memory
- Patent number 10,770,656
- Issue date Sep 8, 2020
- International Business Machines Corporation
- Gloria Wing Yun Fraczak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stackable cross-point phase-change material memory array with a res...
- Patent number 10,763,307
- Issue date Sep 1, 2020
- International Business Machines Corporation
- Fabio Carta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystallized silicon vertical diode on BEOL for access device for c...
- Patent number 10,763,374
- Issue date Sep 1, 2020
- International Business Machines Corporation
- Fabio Carta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-sided liner PCM cell for 3D crossbar PCM memory
- Patent number 10,707,417
- Issue date Jul 7, 2020
- International Business Machines Corporation
- Robert L. Bruce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crosspoint fill-in memory cell with etched access device
- Patent number 10,622,562
- Issue date Apr 14, 2020
- International Business Machines Corporation
- Matthew J. BrightSky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crosspoint fill-in memory cell with etched access device
- Patent number 10,566,531
- Issue date Feb 18, 2020
- International Business Machines Corporation
- Matthew J. BrightSky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated reactive material erasure element with phase change memory
- Patent number 10,535,713
- Issue date Jan 14, 2020
- International Business Machines Corporation
- Matthew J. BrightSky
- G11 - INFORMATION STORAGE
Information Patent Grant
Crystallized silicon vertical diode on BEOL for access device for c...
- Patent number 10,374,103
- Issue date Aug 6, 2019
- International Business Machines Corporation
- Fabio Carta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tone inversion integration for phase change memory
- Patent number 10,312,085
- Issue date Jun 4, 2019
- International Business Machines Corporation
- Matthew J. BrightSky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory array with integrated polycrystalline diodes
- Patent number 10,256,271
- Issue date Apr 9, 2019
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- G11 - INFORMATION STORAGE
Information Patent Grant
Tone inversion integration for phase change memory
- Patent number 10,211,054
- Issue date Feb 19, 2019
- International Business Machines Corporation
- Matthew J. BrightSky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective phase change material growth in high aspect ratio dielect...
- Patent number 10,141,503
- Issue date Nov 27, 2018
- International Business Machines Corporation
- Matthew J. BrightSky
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PHASE-CHANGE MEMORY CELL WITH MIXED-MATERIAL SWITCHABLE REGION
- Publication number 20240196766
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Matthew Joseph BrightSky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE HETEROSTRUCTURES WITH CONTROLLED LINEAR DYNAMIC RANGE
- Publication number 20230371405
- Publication date Nov 16, 2023
- International Business Machines Corporation
- Kevin W. Brew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER PHASE CHANGE MEMORY DEVICE
- Publication number 20230200267
- Publication date Jun 22, 2023
- International Business Machines Corporation
- Kevin W. Brew
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SUPPRESSION OF VOID-FORMATION OF PCM MATERIALS
- Publication number 20230180636
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY WITH LAMINATED CELL
- Publication number 20220407000
- Publication date Dec 22, 2022
- Macronix International Co., Ltd.
- Chih-Hsiang YANG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
PULSING SYNAPTIC DEVICES BASED ON PHASE-CHANGE MEMORY TO INCREASE T...
- Publication number 20220406377
- Publication date Dec 22, 2022
- International Business Machines Corporation
- Fabio Carta
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
3D STACKABLE BIDIRECTIONAL ACCESS DEVICE FOR MEMORY ARRAY
- Publication number 20220406843
- Publication date Dec 22, 2022
- International Business Machines Corporation
- Fabio Carta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REACTIVATION OF A DEPOSITED METAL LINER
- Publication number 20220310912
- Publication date Sep 29, 2022
- International Business Machines Corporation
- ROBERT L. BRUCE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER PHASE CHANGE MEMORY DEVICE
- Publication number 20220209105
- Publication date Jun 30, 2022
- International Business Machines Corporation
- Kevin W. Brew
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
INTEGRATED PHASE CHANGE MEMORY CELL PROJECTION LINER AND ETCH STOP...
- Publication number 20220165949
- Publication date May 26, 2022
- International Business Machines Corporation
- Kevin W. Brew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILL-IN CONFINED CELL PCM DEVICES
- Publication number 20220140237
- Publication date May 5, 2022
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTOR DEVICES INCLUDING S-DOPED AsSeGeSi CHALCOGENIDES
- Publication number 20220123209
- Publication date Apr 21, 2022
- International Business Machines Corporation
- Huai-Yu CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LEVEL CELL THRESHOLD VOLTAGE OPERATION OF ONE-SELECTOR-ONE-RE...
- Publication number 20210375360
- Publication date Dec 2, 2021
- International Business Machines Corporation
- Nanbo Gong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED REACTIVE MATERIAL ERASURE ELEMENT WITH PHASE CHANGE MEMORY
- Publication number 20210257410
- Publication date Aug 19, 2021
- International Business Machines Corporation
- Matthew J. BrightSky
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-LEVEL CELL THRESHOLD VOLTAGE OPERATION OF ONE-SELECTOR-ONE-RE...
- Publication number 20210225441
- Publication date Jul 22, 2021
- International Business Machines Corporation
- Nanbo Gong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY CELL WITH A THERMAL BARRIER LAYER
- Publication number 20210091307
- Publication date Mar 25, 2021
- International Business Machines Corporation
- Matthew Joseph BrightSky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Crosspoint Phase Change Memory with Crystallized Silicon Diode Acce...
- Publication number 20210050384
- Publication date Feb 18, 2021
- International Business Machines Corporation
- Fabio Carta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE-SIDED LINER PCM CELL FOR 3D CROSSBAR PCM MEMORY
- Publication number 20200388760
- Publication date Dec 10, 2020
- International Business Machines Corporation
- Robert L. Bruce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING PHASE CHANGE MEMORY
- Publication number 20200098986
- Publication date Mar 26, 2020
- International Business Machines Corporation
- Gloria Wing Yun FRACZAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITION CONTROL OF CHEMICAL VAPOR DEPOSITION NITROGEN DOPED GER...
- Publication number 20190345607
- Publication date Nov 14, 2019
- International Business Machines Corporation
- Fabio Carta
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
BIPOLAR SWITCHING OPERATION OF CONFINED PHASE CHANGE MEMORY FOR A M...
- Publication number 20190325954
- Publication date Oct 24, 2019
- International Business Machines Corporation
- Wanki Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTALLIZED SILICON VERTICAL DIODE ON BEOL FOR ACCESS DEVICE FOR C...
- Publication number 20190305043
- Publication date Oct 3, 2019
- International Business Machines Corporation
- Fabio Carta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTALLIZED SILICON VERTICAL DIODE ON BEOL FOR ACCESS DEVICE FOR C...
- Publication number 20190305142
- Publication date Oct 3, 2019
- International Business Machines Corporation
- Fabio Carta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSSPOINT FILL-IN MEMORY CELL WITH ETCHED ACCESS DEVICE
- Publication number 20190214560
- Publication date Jul 11, 2019
- International Business Machines Corporation
- Matthew J. BrightSky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY ARRAY WITH INTEGRATED POLYCRYSTALLINE DIODES
- Publication number 20190165043
- Publication date May 30, 2019
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- G11 - INFORMATION STORAGE
Information Patent Application
CROSSPOINT FILL-IN MEMORY CELL WITH ETCHED ACCESS DEVICE
- Publication number 20190157556
- Publication date May 23, 2019
- International Business Machines Corporation
- Matthew J. BrightSky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TONE INVERSION INTEGRATION FOR PHASE CHANGE MEMORY
- Publication number 20190139765
- Publication date May 9, 2019
- International Business Machines Corporation
- Matthew J. BrightSky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE PHASE CHANGE MATERIAL GROWTH IN HIGH ASPECT RATIO DIELECT...
- Publication number 20190140171
- Publication date May 9, 2019
- International Business Machines Corporation
- Matthew J. BrightSky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD VOLTAGE CONTROL OF MEMORY CELL SELECTOR FOR PHASE CHANGE...
- Publication number 20180331284
- Publication date Nov 15, 2018
- International Business Machines Corporation
- Matthew J. BrightSky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D PHASE CHANGE MEMORY WITH HIGH ENDURANCE
- Publication number 20180012938
- Publication date Jan 11, 2018
- International Business Machines Corporation
- Hsiang-Lan LUNG
- H01 - BASIC ELECTRIC ELEMENTS

Matthew J. BrightSky

Person

Patents Grantslast 30 patents

Fill-in confined cell PCM devices

Multi-layer phase change memory device

Reactivation of a deposited metal liner

Phase change memory cell with a thermal barrier layer

Multi-layer phase change memory device

3D stackable bidirectional access device for memory array

Pulsing synaptic devices based on phase-change memory to increase t...

Multi-level cell threshold voltage operation of one-selector-one-re...

Integrated phase change memory cell projection liner and etch stop...

Single-sided liner PCM cell for 3D crossbar PCM memory

Integrated reactive material erasure element with phase change memory

Multi-level cell threshold voltage operation of one-selector-one-re...

Crosspoint phase change memory with crystallized silicon diode acce...

Crystallized silicon vertical diode on BEOL for access device for c...

Selective phase change material growth in high aspect ratio dielect...

Phase change memory array with integrated polycrystalline diodes

Bipolar switching operation of confined phase change memory for a m...

Composition control of chemical vapor deposition nitrogen doped ger...

Method for manufacturing phase change memory

Stackable cross-point phase-change material memory array with a res...

Crystallized silicon vertical diode on BEOL for access device for c...

Single-sided liner PCM cell for 3D crossbar PCM memory

Crosspoint fill-in memory cell with etched access device

Crosspoint fill-in memory cell with etched access device

Integrated reactive material erasure element with phase change memory

Crystallized silicon vertical diode on BEOL for access device for c...

Tone inversion integration for phase change memory

Phase change memory array with integrated polycrystalline diodes

Tone inversion integration for phase change memory

Selective phase change material growth in high aspect ratio dielect...

Patents Applicationslast 30 patents

PHASE-CHANGE MEMORY CELL WITH MIXED-MATERIAL SWITCHABLE REGION

PHASE CHANGE HETEROSTRUCTURES WITH CONTROLLED LINEAR DYNAMIC RANGE

MULTI-LAYER PHASE CHANGE MEMORY DEVICE

SUPPRESSION OF VOID-FORMATION OF PCM MATERIALS

MEMORY WITH LAMINATED CELL

PULSING SYNAPTIC DEVICES BASED ON PHASE-CHANGE MEMORY TO INCREASE T...

3D STACKABLE BIDIRECTIONAL ACCESS DEVICE FOR MEMORY ARRAY

REACTIVATION OF A DEPOSITED METAL LINER

MULTI-LAYER PHASE CHANGE MEMORY DEVICE

INTEGRATED PHASE CHANGE MEMORY CELL PROJECTION LINER AND ETCH STOP...

FILL-IN CONFINED CELL PCM DEVICES

SELECTOR DEVICES INCLUDING S-DOPED AsSeGeSi CHALCOGENIDES

MULTI-LEVEL CELL THRESHOLD VOLTAGE OPERATION OF ONE-SELECTOR-ONE-RE...

INTEGRATED REACTIVE MATERIAL ERASURE ELEMENT WITH PHASE CHANGE MEMORY

MULTI-LEVEL CELL THRESHOLD VOLTAGE OPERATION OF ONE-SELECTOR-ONE-RE...

PHASE CHANGE MEMORY CELL WITH A THERMAL BARRIER LAYER

Crosspoint Phase Change Memory with Crystallized Silicon Diode Acce...

SINGLE-SIDED LINER PCM CELL FOR 3D CROSSBAR PCM MEMORY

METHOD FOR MANUFACTURING PHASE CHANGE MEMORY

COMPOSITION CONTROL OF CHEMICAL VAPOR DEPOSITION NITROGEN DOPED GER...

BIPOLAR SWITCHING OPERATION OF CONFINED PHASE CHANGE MEMORY FOR A M...

CRYSTALLIZED SILICON VERTICAL DIODE ON BEOL FOR ACCESS DEVICE FOR C...

CRYSTALLIZED SILICON VERTICAL DIODE ON BEOL FOR ACCESS DEVICE FOR C...

CROSSPOINT FILL-IN MEMORY CELL WITH ETCHED ACCESS DEVICE

PHASE CHANGE MEMORY ARRAY WITH INTEGRATED POLYCRYSTALLINE DIODES

CROSSPOINT FILL-IN MEMORY CELL WITH ETCHED ACCESS DEVICE

TONE INVERSION INTEGRATION FOR PHASE CHANGE MEMORY

SELECTIVE PHASE CHANGE MATERIAL GROWTH IN HIGH ASPECT RATIO DIELECT...

THRESHOLD VOLTAGE CONTROL OF MEMORY CELL SELECTOR FOR PHASE CHANGE...

3D PHASE CHANGE MEMORY WITH HIGH ENDURANCE