Matthew T. Currie

Person

Windham, NH, US

People

Patents Grantslast 30 patents

Information Patent Grant
Reacted conductive gate electrodes and methods of making the same
- Patent number 10,629,735
- Issue date Apr 21, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming strained-semiconductor-on-insulator device struc...
- Patent number 10,510,581
- Issue date Dec 17, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Thomas A. Langdo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures employing strained material layers with de...
- Patent number 10,164,015
- Issue date Dec 25, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Methods for forming semiconductor device structures
- Patent number 10,050,145
- Issue date Aug 14, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor heterostructures having reduced dislocation pile-ups...
- Patent number 9,934,964
- Issue date Apr 3, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Christopher Leitz
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor structures employing strained material layers with de...
- Patent number 9,923,057
- Issue date Mar 20, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reacted conductive gate electrodes and methods of making the same
- Patent number 9,812,572
- Issue date Nov 7, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming semiconductor device structures
- Patent number 9,601,623
- Issue date Mar 21, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming strained-semiconductor-on-insulator device struc...
- Patent number 9,548,236
- Issue date Jan 17, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Thomas A. Langdo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained channel dynamic random access memory devices
- Patent number 9,508,724
- Issue date Nov 29, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mayank T. Bulsara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lattice-mismatched semiconductor structures with reduced dislocatio...
- Patent number 9,431,243
- Issue date Aug 30, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reacted conductive gate electrodes and methods of making the same
- Patent number 9,343,539
- Issue date May 17, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor heterostructures having reduced dislocation pile-ups...
- Patent number 9,309,607
- Issue date Apr 12, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Christopher Leitz
- C30 - CRYSTAL GROWTH
Information Patent Grant
Hybrid fin field-effect transistor structures and related methods
- Patent number 9,293,582
- Issue date Mar 22, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures employing strained material layers with de...
- Patent number 9,281,376
- Issue date Mar 8, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Lattice-mismatched semiconductor structures with reduced dislocatio...
- Patent number 9,219,112
- Issue date Dec 22, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Strained channel dynamic random access memory devices
- Patent number 9,153,591
- Issue date Oct 6, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mayank T. Bulsara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming semiconductor device structures
- Patent number 9,064,930
- Issue date Jun 23, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Thomas A. Langdo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reacted conductive gate electrodes and methods of making the same
- Patent number 9,048,167
- Issue date Jun 2, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid fin field-effect transistor structures and related methods
- Patent number 9,018,055
- Issue date Apr 28, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lattice-mismatched semiconductor structures with reduced dislocatio...
- Patent number 8,987,028
- Issue date Mar 24, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained channel dynamic random access memory devices
- Patent number 8,890,226
- Issue date Nov 18, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mayank T. Bulsara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor heterostructures having reduced dislocation pile-ups...
- Patent number 8,823,056
- Issue date Sep 2, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Christopher Leitz
- C30 - CRYSTAL GROWTH
Information Patent Grant
RF circuits including transistors having strained material layers
- Patent number 8,809,835
- Issue date Aug 19, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Glyn Braithwaite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lattice-mismatched semiconductor structures with reduced dislocatio...
- Patent number 8,796,734
- Issue date Aug 5, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Reacted conductive gate electrodes and methods of making the same
- Patent number 8,785,315
- Issue date Jul 22, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming strained-semiconductor-on-insulator device struc...
- Patent number 8,748,292
- Issue date Jun 10, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Thomas A. Langdo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures employing strained material layers with de...
- Patent number 8,722,495
- Issue date May 13, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Hybrid fin field-effect transistor structures and related methods
- Patent number 8,709,884
- Issue date Apr 29, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lattice-mismatched semiconductor structures with reduced dislocatio...
- Patent number 8,629,477
- Issue date Jan 14, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...

Patents Applicationslast 30 patents

Information Patent Application
Reacted Conductive Gate Electrodes and Methods of Making the Same
- Publication number 20180053852
- Publication date Feb 22, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Forming Semiconductor Device Structures
- Publication number 20170179285
- Publication date Jun 22, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Strained-Semiconductor-on-Insulator Device Struc...
- Publication number 20170117176
- Publication date Apr 27, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Thomas A. Langdo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reacted Conductive Gate Electrodes and Methods of Making the Same
- Publication number 20160240676
- Publication date Aug 18, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Heterostructures Having Reduced Dislocation Pile-Ups...
- Publication number 20160225609
- Publication date Aug 4, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Christopher Leitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structures Employing Strained Material Layers with De...
- Publication number 20160190254
- Publication date Jun 30, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATTICE-MISMATCHED SEMICONDUCTOR STRUCTURES WITH REDUCED DISLOCATIO...
- Publication number 20160111285
- Publication date Apr 21, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained Channel Dynamic Random Access Memory Devices
- Publication number 20150380414
- Publication date Dec 31, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mayank T. Bulsara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reacted Conductive Gate Electrodes and Methods of Making the Same
- Publication number 20150243752
- Publication date Aug 27, 2015
- Taiwan Semiconductor Manufacturing Co., LTD
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Forming Semiconductor Device Structures
- Publication number 20150243788
- Publication date Aug 27, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hybrid Fin Field-Effect Transistor Structures and Related Methods
- Publication number 20150206971
- Publication date Jul 23, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lattice-Mismatched Semiconductor Structures with Reduced Dislocatio...
- Publication number 20150200246
- Publication date Jul 16, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained Channel Dynamic Random Access Memory Devices
- Publication number 20150060972
- Publication date Mar 5, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mayank T. Bulsara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lattice-Mismatched Semiconductor Structures with Reduced Dislocatio...
- Publication number 20140374798
- Publication date Dec 25, 2014
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Heterostructures Having Reduced Dislocation Pile-Ups...
- Publication number 20140338589
- Publication date Nov 20, 2014
- Christopher Leitz
- C30 - CRYSTAL GROWTH
Information Patent Application
Reacted Conductive Gate Electrodes and Methods of Making the Same
- Publication number 20140312389
- Publication date Oct 23, 2014
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Strained-Semiconductor-on-Insulator Device Struc...
- Publication number 20140242778
- Publication date Aug 28, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Thomas A. Langdo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structures Employing Strained Material Layers with De...
- Publication number 20140220755
- Publication date Aug 7, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hybrid Fin Field-Effect Transistor Structures and Related Methods
- Publication number 20140193955
- Publication date Jul 10, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lattice-Mismatched Semiconductor Structures with Reduced Dislocatio...
- Publication number 20140106546
- Publication date Apr 17, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Forming Semiconductor Device Structures
- Publication number 20140051230
- Publication date Feb 20, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Thomas A. Langdo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lattice-Mismatched Semiconductor Structures with Reduced Dislocatio...
- Publication number 20130285116
- Publication date Oct 31, 2013
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained Channel Dynamic Random Access Memory Devices
- Publication number 20130241035
- Publication date Sep 19, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mayank T. Bulsara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lattice-Mismatched Semiconductor Structures with Reduced Dislocatio...
- Publication number 20130105860
- Publication date May 2, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structures Employing Strained Material Layers with De...
- Publication number 20130040433
- Publication date Feb 14, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF Circuits Including Transistors Having Strained Material Layers
- Publication number 20120299120
- Publication date Nov 29, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Glyn Braithwaite
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Methods for Forming Strained Channel Dynamic Random Access Memory D...
- Publication number 20120302032
- Publication date Nov 29, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mayank Bulsara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID FIN FIELD-EFFECT TRANSISTOR STRUCTURES AND RELATED METHODS
- Publication number 20120220083
- Publication date Aug 30, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Heterostructures Having Reduced Dislocation Pile-Ups...
- Publication number 20120104461
- Publication date May 3, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Christopher Leitz
- C30 - CRYSTAL GROWTH
Information Patent Application
Reacted Conductive Gate Electrodes and Methods of Making the Same
- Publication number 20120098054
- Publication date Apr 26, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS

Matthew T. Currie

Person

Patents Grantslast 30 patents

Reacted conductive gate electrodes and methods of making the same

Methods of forming strained-semiconductor-on-insulator device struc...

Semiconductor structures employing strained material layers with de...

Methods for forming semiconductor device structures

Semiconductor heterostructures having reduced dislocation pile-ups...

Semiconductor structures employing strained material layers with de...

Reacted conductive gate electrodes and methods of making the same

Methods for forming semiconductor device structures

Methods of forming strained-semiconductor-on-insulator device struc...

Strained channel dynamic random access memory devices

Lattice-mismatched semiconductor structures with reduced dislocatio...

Reacted conductive gate electrodes and methods of making the same

Semiconductor heterostructures having reduced dislocation pile-ups...

Hybrid fin field-effect transistor structures and related methods

Semiconductor structures employing strained material layers with de...

Lattice-mismatched semiconductor structures with reduced dislocatio...

Strained channel dynamic random access memory devices

Methods for forming semiconductor device structures

Reacted conductive gate electrodes and methods of making the same

Hybrid fin field-effect transistor structures and related methods

Lattice-mismatched semiconductor structures with reduced dislocatio...

Strained channel dynamic random access memory devices

Semiconductor heterostructures having reduced dislocation pile-ups...

RF circuits including transistors having strained material layers

Lattice-mismatched semiconductor structures with reduced dislocatio...

Reacted conductive gate electrodes and methods of making the same

Methods of forming strained-semiconductor-on-insulator device struc...

Semiconductor structures employing strained material layers with de...

Hybrid fin field-effect transistor structures and related methods

Lattice-mismatched semiconductor structures with reduced dislocatio...

Patents Applicationslast 30 patents

Reacted Conductive Gate Electrodes and Methods of Making the Same

Methods for Forming Semiconductor Device Structures

Methods of Forming Strained-Semiconductor-on-Insulator Device Struc...

Reacted Conductive Gate Electrodes and Methods of Making the Same

Semiconductor Heterostructures Having Reduced Dislocation Pile-Ups...

Semiconductor Structures Employing Strained Material Layers with De...

LATTICE-MISMATCHED SEMICONDUCTOR STRUCTURES WITH REDUCED DISLOCATIO...

Strained Channel Dynamic Random Access Memory Devices

Reacted Conductive Gate Electrodes and Methods of Making the Same

Methods for Forming Semiconductor Device Structures

Hybrid Fin Field-Effect Transistor Structures and Related Methods

Lattice-Mismatched Semiconductor Structures with Reduced Dislocatio...

Strained Channel Dynamic Random Access Memory Devices

Lattice-Mismatched Semiconductor Structures with Reduced Dislocatio...

Semiconductor Heterostructures Having Reduced Dislocation Pile-Ups...

Reacted Conductive Gate Electrodes and Methods of Making the Same

Methods of Forming Strained-Semiconductor-on-Insulator Device Struc...

Semiconductor Structures Employing Strained Material Layers with De...

Hybrid Fin Field-Effect Transistor Structures and Related Methods

Lattice-Mismatched Semiconductor Structures with Reduced Dislocatio...

Methods for Forming Semiconductor Device Structures

Lattice-Mismatched Semiconductor Structures with Reduced Dislocatio...

Strained Channel Dynamic Random Access Memory Devices

Lattice-Mismatched Semiconductor Structures with Reduced Dislocatio...

Semiconductor Structures Employing Strained Material Layers with De...

RF Circuits Including Transistors Having Strained Material Layers

Methods for Forming Strained Channel Dynamic Random Access Memory D...

HYBRID FIN FIELD-EFFECT TRANSISTOR STRUCTURES AND RELATED METHODS

Semiconductor Heterostructures Having Reduced Dislocation Pile-Ups...

Reacted Conductive Gate Electrodes and Methods of Making the Same