Matthias Kessler

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Transistor devices with high-k insulation layers
- Patent number 9,425,194
- Issue date Aug 23, 2016
- GLOBALFOUNDRIES Inc.
- Martin Gerhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising metal-based eFuses of enhanced prog...
- Patent number 9,287,211
- Issue date Mar 15, 2016
- GLOBALFOUNDRIES Inc.
- Andreas Kurz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for manufacturing semiconductor devices comprising transi...
- Patent number 9,219,013
- Issue date Dec 22, 2015
- GLOBALFOUNDRIES Inc.
- Martin Gerhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure including a semiconductor-on-insulator regi...
- Patent number 9,165,840
- Issue date Oct 20, 2015
- GLOBALFOUNDRIES Inc.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming transistor devices with high-k insulation layers...
- Patent number 9,136,177
- Issue date Sep 15, 2015
- GLOBALFOUNDRIES Inc.
- Martin Gerhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure including a semiconductor-on-insulator regi...
- Patent number 8,963,208
- Issue date Feb 24, 2015
- GLOBALFOUNDRIES, INC.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicidation of semiconductor devices
- Patent number 8,846,467
- Issue date Sep 30, 2014
- GLOBALFOUNDRIES Inc.
- Roman Boschke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of a semiconductor device with extended epitaxial semic...
- Patent number 8,642,420
- Issue date Feb 4, 2014
- GLOBALFOUNDRIES, INC.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced STI loss for superior surface planarity of embedded stresso...
- Patent number 8,623,742
- Issue date Jan 7, 2014
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with boot shaped source/drain regions
- Patent number 8,497,180
- Issue date Jul 30, 2013
- GLOBALFOUNDRIES Inc.
- Peter Javorka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor comprising an embedded semiconductor alloy in drain and...
- Patent number 8,460,980
- Issue date Jun 11, 2013
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Early embedded silicon germanium with insitu boron doping and oxide...
- Patent number 8,334,185
- Issue date Dec 18, 2012
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Performance enhancement in transistors comprising high-K metal gate...
- Patent number 8,258,053
- Issue date Sep 4, 2012
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTOR DEVICES WITH HIGH-K INSULATION LAYERS
- Publication number 20150340362
- Publication date Nov 26, 2015
- GLOBALFOUNDRIES INC.
- Martin Gerhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING A SEMICONDUCTOR-ON-INSULATOR REGION AN...
- Publication number 20150340380
- Publication date Nov 26, 2015
- GLOBALFOUNDRIES INC.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING A SEMICONDUCTOR-ON-INSULATOR REGI...
- Publication number 20150111349
- Publication date Apr 23, 2015
- GLOBALFOUNDRIES INC.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR MANUFACTURING SEMICONDUCTOR DEVICES COMPRISING TRANSI...
- Publication number 20140273370
- Publication date Sep 18, 2014
- GLOBAL FOUNDRIES Inc.
- Martin Gerhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING A SEMICONDUCTOR-ON-INSULATOR REGI...
- Publication number 20140131771
- Publication date May 15, 2014
- GLOBALFOUNDRIES INC.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS HAVING BORON-DOPED SILICON GERMANIUM CHANNELS A...
- Publication number 20140070321
- Publication date Mar 13, 2014
- GLOBALFOUNDRIES INC.
- Martin Gerhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING TRANSISTOR DEVICES WITH HIGH-K INSULATION LAYERS...
- Publication number 20140027859
- Publication date Jan 30, 2014
- GLOBALFOUNDRIES INC.
- Martin Gerhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Source/Drain Regions on Transistor Devices
- Publication number 20130095627
- Publication date Apr 18, 2013
- GLOBALFOUNDRIES INC.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF A SEMICONDUCTOR DEVICE WITH EXTENDED EPITAXIAL SEMIC...
- Publication number 20130052779
- Publication date Feb 28, 2013
- GLOBALFOUNDRIES INC.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH BOOT SHAPED SOURCE/DRAIN REGIONS
- Publication number 20130032864
- Publication date Feb 7, 2013
- GLOBALFOUNDRIES INC.
- Peter Javorka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLEXIBLE ELECTRONICS WIRING
- Publication number 20120301688
- Publication date Nov 29, 2012
- GLOBALFOUNDRIES INC.
- Ricardo P. MIKALO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
EARLY EMBEDDED SILICON GERMANIUM WITH INSITU BORON DOPING AND OXIDE...
- Publication number 20120267683
- Publication date Oct 25, 2012
- GLOBALFOUNDRIES INC.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduced STI Loss for Superior Surface Planarity of Embedded Stresso...
- Publication number 20110269293
- Publication date Nov 3, 2011
- GLOBALFOUNDRIES INC.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Comprising Metal-Based eFuses of Enhanced Prog...
- Publication number 20110241162
- Publication date Oct 6, 2011
- GLOBALFOUNDRIES INC.
- Andreas Kurz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERFORMANCE ENHANCEMENT IN TRANSISTORS COMPRISING HIGH-K METAL GATE...
- Publication number 20110129971
- Publication date Jun 2, 2011
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR COMPRISING AN EMBEDDED SEMICONDUCTOR ALLOY IN DRAIN AND...
- Publication number 20100219474
- Publication date Sep 2, 2010
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS

Matthias Kessler

Person

Patents Grantslast 30 patents

Transistor devices with high-k insulation layers

Semiconductor device comprising metal-based eFuses of enhanced prog...

Technique for manufacturing semiconductor devices comprising transi...

Semiconductor structure including a semiconductor-on-insulator regi...

Methods of forming transistor devices with high-k insulation layers...

Semiconductor structure including a semiconductor-on-insulator regi...

Silicidation of semiconductor devices

Fabrication of a semiconductor device with extended epitaxial semic...

Reduced STI loss for superior surface planarity of embedded stresso...

Transistor with boot shaped source/drain regions

Transistor comprising an embedded semiconductor alloy in drain and...

Early embedded silicon germanium with insitu boron doping and oxide...

Performance enhancement in transistors comprising high-K metal gate...

Patents Applicationslast 30 patents

TRANSISTOR DEVICES WITH HIGH-K INSULATION LAYERS

INTEGRATED CIRCUIT INCLUDING A SEMICONDUCTOR-ON-INSULATOR REGION AN...

SEMICONDUCTOR STRUCTURE INCLUDING A SEMICONDUCTOR-ON-INSULATOR REGI...

TECHNIQUE FOR MANUFACTURING SEMICONDUCTOR DEVICES COMPRISING TRANSI...

SEMICONDUCTOR STRUCTURE INCLUDING A SEMICONDUCTOR-ON-INSULATOR REGI...

INTEGRATED CIRCUITS HAVING BORON-DOPED SILICON GERMANIUM CHANNELS A...

METHODS OF FORMING TRANSISTOR DEVICES WITH HIGH-K INSULATION LAYERS...

Methods of Forming Source/Drain Regions on Transistor Devices

FABRICATION OF A SEMICONDUCTOR DEVICE WITH EXTENDED EPITAXIAL SEMIC...

TRANSISTOR WITH BOOT SHAPED SOURCE/DRAIN REGIONS

FLEXIBLE ELECTRONICS WIRING

EARLY EMBEDDED SILICON GERMANIUM WITH INSITU BORON DOPING AND OXIDE...

Reduced STI Loss for Superior Surface Planarity of Embedded Stresso...

Semiconductor Device Comprising Metal-Based eFuses of Enhanced Prog...

PERFORMANCE ENHANCEMENT IN TRANSISTORS COMPRISING HIGH-K METAL GATE...

TRANSISTOR COMPRISING AN EMBEDDED SEMICONDUCTOR ALLOY IN DRAIN AND...