Mattias Erik Dahlstrom

Person

Los Altos, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Dopant profile control in heterojunction bipolar transistor (HBT)
- Patent number 12,068,402
- Issue date Aug 20, 2024
- Texas Instruments Incorporated
- Tatsuya Tominari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF MOS varactor
- Patent number 11,955,530
- Issue date Apr 9, 2024
- Texas Instruments Incorporated
- Jeff Archimedes Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor resistor structure and method for making
- Patent number 10,720,488
- Issue date Jul 21, 2020
- Texas Instruments Incorporated
- Mattias Erik Dahlström
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated JFET structure with implanted backgate
- Patent number 10,522,663
- Issue date Dec 31, 2019
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor resistor structure and method for making
- Patent number 10,229,966
- Issue date Mar 12, 2019
- Texas Instruments Incorporated
- Mattias Erik Dahlström
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated JFET structure with implanted backgate
- Patent number 10,079,294
- Issue date Sep 18, 2018
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DOPANT PROFILE CONTROL IN HETEROJUNCTION BIPOLAR TRANSISTOR (HBT)
- Publication number 20240405106
- Publication date Dec 5, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Tatsuya Tominari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF MOS VARACTOR
- Publication number 20230135765
- Publication date May 4, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Jeff Archimedes Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPANT PROFILE CONTROL IN HETEROJUNCTION BIPOLAR TRANSISTOR (HBT)
- Publication number 20230088544
- Publication date Mar 23, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Tatsuya Tominari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE HAVING MULTIPLE EMITTER LAYERS
- Publication number 20220093736
- Publication date Mar 24, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Mattias DAHLSTROM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Resistor Structure And Method For Making
- Publication number 20190172901
- Publication date Jun 6, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Mattias Erik Dahlström
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED JFET STRUCTURE WITH IMPLANTED BACKGATE
- Publication number 20190019884
- Publication date Jan 17, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR RESISTOR STRUCTURE AND METHOD FOR MAKING
- Publication number 20180190753
- Publication date Jul 5, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Mattias Erik Dahlström
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED JFET STRUCTURE WITH IMPLANTED BACKGATE
- Publication number 20170373171
- Publication date Dec 28, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS

Mattias Erik Dahlstrom

Person

Patents Grantslast 30 patents

Dopant profile control in heterojunction bipolar transistor (HBT)

RF MOS varactor

Semiconductor resistor structure and method for making

Integrated JFET structure with implanted backgate

Semiconductor resistor structure and method for making

Integrated JFET structure with implanted backgate

Patents Applicationslast 30 patents

DOPANT PROFILE CONTROL IN HETEROJUNCTION BIPOLAR TRANSISTOR (HBT)

RF MOS VARACTOR

DOPANT PROFILE CONTROL IN HETEROJUNCTION BIPOLAR TRANSISTOR (HBT)

DEVICE HAVING MULTIPLE EMITTER LAYERS

Semiconductor Resistor Structure And Method For Making

INTEGRATED JFET STRUCTURE WITH IMPLANTED BACKGATE

SEMICONDUCTOR RESISTOR STRUCTURE AND METHOD FOR MAKING

INTEGRATED JFET STRUCTURE WITH IMPLANTED BACKGATE