Mauro Kobrinsky

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Hybrid manufacturing for integrating photonic and electronic compon...
- Patent number 12,147,083
- Issue date Nov 19, 2024
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of a placeholder for backside contact formation for transistor...
- Patent number 12,148,751
- Issue date Nov 19, 2024
- Intel Corporation
- Andy Chih-Hung Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory arrays with layer selector transistors
- Patent number 12,114,479
- Issue date Oct 8, 2024
- Intel Corporation
- Wilfred Gomes
- G11 - INFORMATION STORAGE
Information Patent Grant
Transistor channel passivation with 2D crystalline material
- Patent number 12,107,170
- Issue date Oct 1, 2024
- Intel Corporation
- Carl Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench via for three-dimensional integrated circuit
- Patent number 12,100,705
- Issue date Sep 24, 2024
- Intel Corporation
- Yih Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional nanoribbon-based dynamic random-access memory
- Patent number 12,058,849
- Issue date Aug 6, 2024
- Intel Corporation
- Wilfred Gomes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device with crenellated metal trace layout
- Patent number 11,996,362
- Issue date May 28, 2024
- Intel Corporation
- Patrick Morrow
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Fabrication of stackable embedded eDRAM using a binary alloy based...
- Patent number 11,985,909
- Issue date May 14, 2024
- Intel Corporation
- Elijah Karpov
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertically spaced intra-level interconnect line metallization for i...
- Patent number 11,948,874
- Issue date Apr 2, 2024
- Intel Corporation
- Kevin L. Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microelectronic package with three-dimensional (3D) monolithic memo...
- Patent number 11,901,347
- Issue date Feb 13, 2024
- Intel Corporation
- Wilfred Gomes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device layer interconnects
- Patent number 11,881,452
- Issue date Jan 23, 2024
- Intel Corporation
- Mark Bohr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits and methods for forming integrated circuits
- Patent number 11,830,788
- Issue date Nov 28, 2023
- Intel Corporation
- Carl Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid manufacturing for integrated circuit devices and assemblies
- Patent number 11,817,442
- Issue date Nov 14, 2023
- Intel Corporation
- Wilfred Gomes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having asymmetric sou...
- Patent number 11,799,037
- Issue date Oct 24, 2023
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid manufacturing of microeletronic assemblies with first and se...
- Patent number 11,756,886
- Issue date Sep 12, 2023
- Intel Corporation
- Wilfred Gomes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress compensation for wafer to wafer bonding
- Patent number 11,721,554
- Issue date Aug 8, 2023
- Intel Corporation
- Anant Jahagirdar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistor based memory cells on both sides of a layer of...
- Patent number 11,690,211
- Issue date Jun 27, 2023
- Intel Corporation
- Wilfred Gomes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structures having partitioned source or drain co...
- Patent number 11,621,354
- Issue date Apr 4, 2023
- Intel Corporation
- Mauro J. Kobrinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device with back-side interconnection to deep so...
- Patent number 11,616,015
- Issue date Mar 28, 2023
- Intel Corporation
- Patrick Morrow
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Metallization barrier structures for bonded integrated circuit inte...
- Patent number 11,532,558
- Issue date Dec 20, 2022
- Intel Corporation
- Carl Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside source/drain replacement for semiconductor devices with me...
- Patent number 11,444,166
- Issue date Sep 13, 2022
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device layer interconnects
- Patent number 11,410,928
- Issue date Aug 9, 2022
- Intel Corporation
- Mark Bohr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench via for three-dimensional integrated circuit
- Patent number 11,373,999
- Issue date Jun 28, 2022
- Intel Corporation
- Yih Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having asymmetric sou...
- Patent number 11,367,796
- Issue date Jun 21, 2022
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with back-side contacts to create three dimensional mem...
- Patent number 11,335,686
- Issue date May 17, 2022
- Intel Corporation
- Wilfred Gomes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structures having differentiated neighboring par...
- Patent number 11,329,162
- Issue date May 10, 2022
- Intel Corporation
- Mauro J. Kobrinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor cells including a deep via lined wit h a dielectric mate...
- Patent number 11,328,951
- Issue date May 10, 2022
- Intel Corporation
- Patrick Morrow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits and methods for forming thin film crystal layers
- Patent number 11,276,644
- Issue date Mar 15, 2022
- Intel Corporation
- Carl Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional nanoribbon-based dynamic random-access memory
- Patent number 11,257,822
- Issue date Feb 22, 2022
- Intel Corporation
- Wilfred Gomes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistor based memory cells on both sides of a layer of...
- Patent number 11,239,238
- Issue date Feb 1, 2022
- Intel Corporation
- Wilfred Gomes
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THREE-DIMENSIONAL MEMORY ARRAYS WITH LAYER SELECTOR TRANSISTORS
- Publication number 20240389300
- Publication date Nov 21, 2024
- Intel Corporation
- Wilfred Gomes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT RESISTANCE REDUCTION IN TRANSISTOR DEVICES WITH METALLIZATI...
- Publication number 20240347610
- Publication date Oct 17, 2024
- Intel Corporation
- Koustav GANGULY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING AIR GAPS
- Publication number 20240332166
- Publication date Oct 3, 2024
- Intel Corporation
- Seda CEKLI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES WITH BACKSIDE CONDUCTIVE SOURCE OR DR...
- Publication number 20240332302
- Publication date Oct 3, 2024
- Intel Corporation
- Joseph D’SILVA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE GATE CONNECTION
- Publication number 20240332077
- Publication date Oct 3, 2024
- Intel Corporation
- Shaun MILLS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE TRANSISTOR CONTACT SURROUNDED BY OXIDE
- Publication number 20240332175
- Publication date Oct 3, 2024
- Intel Corporation
- Joseph D’SILVA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE SOURCE OR DRAIN CONTACT...
- Publication number 20240332377
- Publication date Oct 3, 2024
- Intel Corporation
- Shaun MILLS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE CONTACT ETCH BEFORE CAVITY SPACER FORMATION FOR BACKSIDE C...
- Publication number 20240332379
- Publication date Oct 3, 2024
- Intel Corporation
- Shaun Mills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK SIDE INTERCONNECT PATTERNING AND FRONT SIDE METAL INTERCONNECT...
- Publication number 20240332064
- Publication date Oct 3, 2024
- Intel Corporation
- Ehren MANNEBACH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE CONTACT WIDENING
- Publication number 20240332172
- Publication date Oct 3, 2024
- Intel Corporation
- Ehren MANNEBACH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE WITH BACK-SIDE CONTACT SELECTIVITY
- Publication number 20240313096
- Publication date Sep 19, 2024
- Intel Corporation
- Ehren MANNEBACH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING UNIFORM GRID METAL GATE AND TR...
- Publication number 20240312996
- Publication date Sep 19, 2024
- Intel Corporation
- Dan S. LAVRIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICALLY SPACED INTRA-LEVEL INTERCONNECT LINE METALLIZATION FOR I...
- Publication number 20240243052
- Publication date Jul 18, 2024
- Intel Corporation
- Kevin L. Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANORIBBON STACKS WITHOUT DIELECTRIC PROTECTION CAPS FOR TOP NANORI...
- Publication number 20240204060
- Publication date Jun 20, 2024
- Intel Corporation
- Rohit Galatage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR GATE-CHANNEL ARRANGEMENTS WITH MULTIPLE DIPOLE MATERIALS
- Publication number 20240204103
- Publication date Jun 20, 2024
- Intel Corporation
- Rohit Galatage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE LAYER INTERCONNECTS
- Publication number 20240096791
- Publication date Mar 21, 2024
- Intel Corporation
- Mark Bohr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODES WITH BACKSIDE CONTACT
- Publication number 20240088131
- Publication date Mar 14, 2024
- Intel Corporation
- Nicholas A. Thomson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TARGETED SUB-FIN ETCH DEPTH
- Publication number 20240088134
- Publication date Mar 14, 2024
- Intel Corporation
- Nicholas A. Thomson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID MANUFACTURING FOR INTEGRATED CIRCUIT DEVICES AND ASSEMBLIES
- Publication number 20240030213
- Publication date Jan 25, 2024
- Intel Corporation
- Wilfred Gomes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND TRANSISTOR CIRCUIT MODIFICATION USING DIRECT CONTAC...
- Publication number 20240006302
- Publication date Jan 4, 2024
- Intel Corporation
- Richard H. Livengood
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING ASYMMETRIC SOU...
- Publication number 20240006541
- Publication date Jan 4, 2024
- Intel Coporation
- Biswajeet GUHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIGE:GAB SOURCE OR DRAIN STRUCTURES WITH LOW RESISTIVITY
- Publication number 20230420456
- Publication date Dec 28, 2023
- Intel Corporation
- Debaleena NANDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOWER DEVICE ACCESS IN STACKED TRANSISTOR DEVICES
- Publication number 20230420460
- Publication date Dec 28, 2023
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE POWER STAPLE
- Publication number 20230420512
- Publication date Dec 28, 2023
- Intel Corporation
- Sukru YEMENICIOGLU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARACTOR DEVICE WITH BACKSIDE ELECTRICAL CONTACT
- Publication number 20230420578
- Publication date Dec 28, 2023
- Intel Corporation
- Ayan Kar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES WITH DIODES INTEGRATED IN SUBFINS
- Publication number 20230420443
- Publication date Dec 28, 2023
- Nicholas A. Thomson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED EMBEDDED SOURCE AND DRAIN CONTACTS
- Publication number 20230420528
- Publication date Dec 28, 2023
- Intel Corporation
- Nitesh Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL SILICIDE FOR STACKED TRANSISTOR DEVICES
- Publication number 20230402507
- Publication date Dec 14, 2023
- Intel Corporation
- Rohit Galatage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE AND DRAIN CONTACTS FORMED USING SACRIFICIAL REGIONS OF SOURC...
- Publication number 20230402513
- Publication date Dec 14, 2023
- Intel Corporation
- Rohit Galatage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SOURCE AND DRAIN CONTACTS TUNED FOR VERTICALLY STACKED PMOS AND...
- Publication number 20230395718
- Publication date Dec 7, 2023
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS

Mauro Kobrinsky

Person

Patents Grantslast 30 patents

Hybrid manufacturing for integrating photonic and electronic compon...

Use of a placeholder for backside contact formation for transistor...

Three-dimensional memory arrays with layer selector transistors

Transistor channel passivation with 2D crystalline material

Deep trench via for three-dimensional integrated circuit

Three-dimensional nanoribbon-based dynamic random-access memory

Integrated circuit device with crenellated metal trace layout

Fabrication of stackable embedded eDRAM using a binary alloy based...

Vertically spaced intra-level interconnect line metallization for i...

Microelectronic package with three-dimensional (3D) monolithic memo...

Device layer interconnects

Integrated circuits and methods for forming integrated circuits

Hybrid manufacturing for integrated circuit devices and assemblies

Gate-all-around integrated circuit structures having asymmetric sou...

Hybrid manufacturing of microeletronic assemblies with first and se...

Stress compensation for wafer to wafer bonding

Thin film transistor based memory cells on both sides of a layer of...

Integrated circuit structures having partitioned source or drain co...

Integrated circuit device with back-side interconnection to deep so...

Metallization barrier structures for bonded integrated circuit inte...

Backside source/drain replacement for semiconductor devices with me...

Device layer interconnects

Deep trench via for three-dimensional integrated circuit

Gate-all-around integrated circuit structures having asymmetric sou...

Transistors with back-side contacts to create three dimensional mem...

Integrated circuit structures having differentiated neighboring par...

Transistor cells including a deep via lined wit h a dielectric mate...

Integrated circuits and methods for forming thin film crystal layers

Three-dimensional nanoribbon-based dynamic random-access memory

Thin film transistor based memory cells on both sides of a layer of...

Patents Applicationslast 30 patents

THREE-DIMENSIONAL MEMORY ARRAYS WITH LAYER SELECTOR TRANSISTORS

CONTACT RESISTANCE REDUCTION IN TRANSISTOR DEVICES WITH METALLIZATI...

INTEGRATED CIRCUIT STRUCTURES HAVING AIR GAPS

INTEGRATED CIRCUIT STRUCTURES WITH BACKSIDE CONDUCTIVE SOURCE OR DR...

INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE GATE CONNECTION

BACKSIDE TRANSISTOR CONTACT SURROUNDED BY OXIDE

INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE SOURCE OR DRAIN CONTACT...

BACKSIDE CONTACT ETCH BEFORE CAVITY SPACER FORMATION FOR BACKSIDE C...

BACK SIDE INTERCONNECT PATTERNING AND FRONT SIDE METAL INTERCONNECT...

INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE CONTACT WIDENING

INTEGRATED CIRCUIT STRUCTURE WITH BACK-SIDE CONTACT SELECTIVITY

INTEGRATED CIRCUIT STRUCTURES HAVING UNIFORM GRID METAL GATE AND TR...

VERTICALLY SPACED INTRA-LEVEL INTERCONNECT LINE METALLIZATION FOR I...

NANORIBBON STACKS WITHOUT DIELECTRIC PROTECTION CAPS FOR TOP NANORI...

TRANSISTOR GATE-CHANNEL ARRANGEMENTS WITH MULTIPLE DIPOLE MATERIALS

DEVICE LAYER INTERCONNECTS

DIODES WITH BACKSIDE CONTACT

TARGETED SUB-FIN ETCH DEPTH

HYBRID MANUFACTURING FOR INTEGRATED CIRCUIT DEVICES AND ASSEMBLIES

GATE-ALL-AROUND TRANSISTOR CIRCUIT MODIFICATION USING DIRECT CONTAC...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING ASYMMETRIC SOU...

SIGE:GAB SOURCE OR DRAIN STRUCTURES WITH LOW RESISTIVITY

LOWER DEVICE ACCESS IN STACKED TRANSISTOR DEVICES

INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE POWER STAPLE

VARACTOR DEVICE WITH BACKSIDE ELECTRICAL CONTACT

INTEGRATED CIRCUIT DEVICES WITH DIODES INTEGRATED IN SUBFINS

SELF-ALIGNED EMBEDDED SOURCE AND DRAIN CONTACTS

DUAL METAL SILICIDE FOR STACKED TRANSISTOR DEVICES

SOURCE AND DRAIN CONTACTS FORMED USING SACRIFICIAL REGIONS OF SOURC...

3D SOURCE AND DRAIN CONTACTS TUNED FOR VERTICALLY STACKED PMOS AND...