Max G. Levy

Person

Essex Junction, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Centering substrates on a chuck
- Patent number 10,224,225
- Issue date Mar 5, 2019
- International Business Machines Corporation
- Shawn A. Adderly
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Tapered gate oxide in LDMOS devices
- Patent number 10,050,115
- Issue date Aug 14, 2018
- GLOBALFOUNDRIES Inc.
- Brennan J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Centering substrates on a chuck
- Patent number 9,997,385
- Issue date Jun 12, 2018
- International Business Machines Corporation
- Shawn A. Adderly
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures with contact trenches and isolation trenches
- Patent number 9,893,157
- Issue date Feb 13, 2018
- GLOBALFOUNDRIES Inc.
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with metal extrusion formation
- Patent number 9,825,119
- Issue date Nov 21, 2017
- International Business Machines Corporation
- Max G. Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with metal extrusion formation
- Patent number 9,825,120
- Issue date Nov 21, 2017
- International Business Machines Corporation
- Max G. Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for centering substrates on a chuck
- Patent number 9,685,362
- Issue date Jun 20, 2017
- International Business Machines Corporation
- Shawn A. Adderly
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual shallow trench isolation (STI) structure for field effect tran...
- Patent number 9,595,579
- Issue date Mar 14, 2017
- GLOBALFOUNDRIES Inc.
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with metal extrusion formation
- Patent number 9,548,349
- Issue date Jan 17, 2017
- International Business Machines Corporation
- Max G. Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for detecting foreign material on a chuck
- Patent number 9,508,578
- Issue date Nov 29, 2016
- GLOBALFOUNDRIES Inc.
- Shawn A. Adderly
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlled metal extrusion opening in semiconductor structure and m...
- Patent number 9,484,301
- Issue date Nov 1, 2016
- GLOBALFOUNDRIES Inc.
- Max G. Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low leakage, high frequency devices
- Patent number 9,337,310
- Issue date May 10, 2016
- GLOBALFOUNDRIES Inc.
- Theodore J. Letavic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlled metal extrusion opening in semiconductor structure and m...
- Patent number 9,059,258
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Max G. Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on-insulator (SOI) structure configured for reduced harmoni...
- Patent number 8,709,903
- Issue date Apr 29, 2014
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on-insulator (SOI) structure configured for reduced harmoni...
- Patent number 8,698,244
- Issue date Apr 15, 2014
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on-insulator (SOI) structure configured for reduced harmoni...
- Patent number 8,564,067
- Issue date Oct 22, 2013
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for buried inductors for ultra-high resistivit...
- Patent number 8,487,379
- Issue date Jul 16, 2013
- International Business Machines Corporation
- Max G. Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on-insulator (SOI) structure configured for reduced harmoni...
- Patent number 8,471,340
- Issue date Jun 25, 2013
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of multiple gate oxides with shallow trench isolation m...
- Patent number 8,227,318
- Issue date Jul 24, 2012
- International Business Machines Corporation
- Max Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for buried inductors for ultra-high resistivit...
- Patent number 8,188,570
- Issue date May 29, 2012
- International Business Machines Corporation
- Max G. Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI substrate contact with extended silicide area
- Patent number 7,939,896
- Issue date May 10, 2011
- International Business Machines Corporation
- Dinh Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High resistivity SOI base wafer using thermally annealed substrate
- Patent number 7,883,990
- Issue date Feb 8, 2011
- International Business Machines Corporation
- Max Levy
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Structure and method for buried inductors for ultra-high resistivit...
- Patent number 7,842,580
- Issue date Nov 30, 2010
- International Business Machines Corporation
- Max G. Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench forming method and structure
- Patent number 7,772,083
- Issue date Aug 10, 2010
- International Business Machines Corporation
- Alan Bernard Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI substrate contact with extended silicide area
- Patent number 7,675,121
- Issue date Mar 9, 2010
- International Business Machines Corporation
- Dinh Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through via in ultra high resistivity wafer and related methods
- Patent number 7,485,965
- Issue date Feb 3, 2009
- International Business Machines Corporation
- Louis D. Lanzerotti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for correcting gravitational sag in photomasks...
- Patent number 7,239,376
- Issue date Jul 3, 2007
- International Business Machines Corporation
- Michael S. Hibbs
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Method for forming a voltage programming element
- Patent number 6,812,122
- Issue date Nov 2, 2004
- International Business Machines Corporation
- Claude L. Bertin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic fuse structure and method of manufacturing
- Patent number 6,633,055
- Issue date Oct 14, 2003
- International Business Machines Corporation
- Claude L. Bertin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods to control the threshold voltage of a deep trench corner de...
- Patent number 6,518,145
- Issue date Feb 11, 2003
- International Business Machines Corporation
- Johann Alsmeier
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CENTERING SUBSTRATES ON A CHUCK
- Publication number 20180240694
- Publication date Aug 23, 2018
- International Business Machines Corporation
- Shawn A. Adderly
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CENTERING SUBSTRATES ON A CHUCK
- Publication number 20170221742
- Publication date Aug 3, 2017
- International Business Machines Corporation
- Shawn A. Adderly
- G01 - MEASURING TESTING
Information Patent Application
SEMICONDUCTOR DEVICE WITH METAL EXTRUSION FORMATION
- Publication number 20160343797
- Publication date Nov 24, 2016
- International Business Machines Corporation
- Max G. Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH METAL EXTRUSION FORMATION
- Publication number 20160343798
- Publication date Nov 24, 2016
- International Business Machines Corporation
- Max G. Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TAPERED GATE OXIDE IN LDMOS DEVICES
- Publication number 20160190269
- Publication date Jun 30, 2016
- International Business Machines Corporation
- Brennan J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH METAL EXTRUSION FORMATION
- Publication number 20150380478
- Publication date Dec 31, 2015
- International Business Machines Corporation
- Max G. Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW LEAKAGE, HIGH FREQUENCY DEVICES
- Publication number 20150318378
- Publication date Nov 5, 2015
- International Business Machines Corporation
- Theodore J. LETAVIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL SHALLOW TRENCH ISOLATION (STI) FIELD EFFECT TRANSISTOR (FET) A...
- Publication number 20150255539
- Publication date Sep 10, 2015
- International Business Machines Corporation
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROLLED METAL EXTRUSION OPENING IN SEMICONDUCTOR STRUCTURE AND M...
- Publication number 20150255395
- Publication date Sep 10, 2015
- International Business Machines Corporation
- Max G. Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Apparatus and Method for Centering Substrates on a Chuck
- Publication number 20150235881
- Publication date Aug 20, 2015
- International Business Machines Corporation
- Shawn A. Adderly
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR DETECTING FOREIGN MATERIAL ON A CHUCK
- Publication number 20150219479
- Publication date Aug 6, 2015
- International Business Machines Corporation
- Shawn A. Adderly
- G01 - MEASURING TESTING
Information Patent Application
DUAL SHALLOW TRENCH ISOLATION (STI) FIELD EFFECT TRANSISTOR (FET) A...
- Publication number 20140327084
- Publication date Nov 6, 2014
- International Business Machines Corporation
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROLLED METAL EXTRUSION OPENING IN SEMICONDUCTOR STRUCTURE AND M...
- Publication number 20140246777
- Publication date Sep 4, 2014
- International Business Machines Corporation
- Max G. Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-ON-INSULATOR (SOI) STRUCTURE CONFIGURED FOR REDUCED HARMONI...
- Publication number 20140004687
- Publication date Jan 2, 2014
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-ON-INSULATOR (SOI) STRUCTURE CONFIGURED FOR REDUCED HARMONI...
- Publication number 20130161618
- Publication date Jun 27, 2013
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR BURIED INDUCTORS FOR ULTRA-HIGH RESISTIVIT...
- Publication number 20120205741
- Publication date Aug 16, 2012
- International Business Machines Corporation
- Max G. LEVY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-ON-INSULATOR (SOI) STRUCTURE CONFIGURED FOR REDUCED HARMONI...
- Publication number 20110127529
- Publication date Jun 2, 2011
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-ON-INSULATOR (SOI) STRUCTURE CONFIGURED FOR REDUCED HARMONI...
- Publication number 20110131542
- Publication date Jun 2, 2011
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integration of Multiple Gate Oxides with Shallow Trench Isolation M...
- Publication number 20110117714
- Publication date May 19, 2011
- International Business Machines Corporation
- Max Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DESIGN STRUCTURE AND METHOD FOR BURIED INDUCTORS FOR ULTRA-HIGH RES...
- Publication number 20100327398
- Publication date Dec 30, 2010
- International Business Machines Corporation
- Max G. LEVY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH FORMING METHOD AND STRUCTURE
- Publication number 20100164075
- Publication date Jul 1, 2010
- International Business Machines Corporation
- Alan Bernard Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI SUBSTRATE CONTACT WITH EXTENDED SILICIDE AREA
- Publication number 20100084736
- Publication date Apr 8, 2010
- International Business Machines Corporation
- Dinh Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Design Structure and Method for Buried Inductors for Ultra-High Res...
- Publication number 20090283854
- Publication date Nov 19, 2009
- Max G. Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH RESISTIVITY SOI BASE WAFER USING THERMALLY ANNEALED SUBSTRATE
- Publication number 20090110898
- Publication date Apr 30, 2009
- International Business Machines Corporation
- Max Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI SUBSTRATE CONTACT WITH EXTENDED SILICIDE AREA
- Publication number 20090093092
- Publication date Apr 9, 2009
- Dinh Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI SUBSTRATE CONTACT WITH EXTENDED SILICIDE AREA
- Publication number 20090090970
- Publication date Apr 9, 2009
- Dinh Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH VIA IN ULTRA HIGH RESISTIVITY WAFER AND RELATED METHODS
- Publication number 20080290524
- Publication date Nov 27, 2008
- International Business Machines Corporation
- Louis D. Lanzerotti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A METHOD AND APPARATUS FOR CORRECTING GRAVITATIONAL SAG IN PHOTOMAS...
- Publication number 20070024831
- Publication date Feb 1, 2007
- International Business Machines Corporation
- Michael S. Hibbs
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Antifuses and methods for forming the same
- Publication number 20020093074
- Publication date Jul 18, 2002
- International Business Machines Corporation
- Claude L. Bertin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC FUSE STRUCTURE AND METHOD OF MANUFACTURING
- Publication number 20020011645
- Publication date Jan 31, 2002
- CLAUDE L. BERTIN
- H01 - BASIC ELECTRIC ELEMENTS

Max G. Levy

Person

Patents Grantslast 30 patents

Centering substrates on a chuck

Tapered gate oxide in LDMOS devices

Centering substrates on a chuck

Structures with contact trenches and isolation trenches

Semiconductor device with metal extrusion formation

Semiconductor device with metal extrusion formation

Apparatus and method for centering substrates on a chuck

Dual shallow trench isolation (STI) structure for field effect tran...

Semiconductor device with metal extrusion formation

Method and apparatus for detecting foreign material on a chuck

Controlled metal extrusion opening in semiconductor structure and m...

Low leakage, high frequency devices

Controlled metal extrusion opening in semiconductor structure and m...

Silicon-on-insulator (SOI) structure configured for reduced harmoni...

Silicon-on-insulator (SOI) structure configured for reduced harmoni...

Silicon-on-insulator (SOI) structure configured for reduced harmoni...

Structure and method for buried inductors for ultra-high resistivit...

Silicon-on-insulator (SOI) structure configured for reduced harmoni...

Integration of multiple gate oxides with shallow trench isolation m...

Structure and method for buried inductors for ultra-high resistivit...

SOI substrate contact with extended silicide area

High resistivity SOI base wafer using thermally annealed substrate

Structure and method for buried inductors for ultra-high resistivit...

Trench forming method and structure

SOI substrate contact with extended silicide area

Through via in ultra high resistivity wafer and related methods

Method and apparatus for correcting gravitational sag in photomasks...

Method for forming a voltage programming element

Electronic fuse structure and method of manufacturing

Methods to control the threshold voltage of a deep trench corner de...

Patents Applicationslast 30 patents

CENTERING SUBSTRATES ON A CHUCK

CENTERING SUBSTRATES ON A CHUCK

SEMICONDUCTOR DEVICE WITH METAL EXTRUSION FORMATION

SEMICONDUCTOR DEVICE WITH METAL EXTRUSION FORMATION

TAPERED GATE OXIDE IN LDMOS DEVICES

SEMICONDUCTOR DEVICE WITH METAL EXTRUSION FORMATION

LOW LEAKAGE, HIGH FREQUENCY DEVICES

DUAL SHALLOW TRENCH ISOLATION (STI) FIELD EFFECT TRANSISTOR (FET) A...

CONTROLLED METAL EXTRUSION OPENING IN SEMICONDUCTOR STRUCTURE AND M...

Apparatus and Method for Centering Substrates on a Chuck

METHOD AND APPARATUS FOR DETECTING FOREIGN MATERIAL ON A CHUCK

DUAL SHALLOW TRENCH ISOLATION (STI) FIELD EFFECT TRANSISTOR (FET) A...

CONTROLLED METAL EXTRUSION OPENING IN SEMICONDUCTOR STRUCTURE AND M...

SILICON-ON-INSULATOR (SOI) STRUCTURE CONFIGURED FOR REDUCED HARMONI...

SILICON-ON-INSULATOR (SOI) STRUCTURE CONFIGURED FOR REDUCED HARMONI...

STRUCTURE AND METHOD FOR BURIED INDUCTORS FOR ULTRA-HIGH RESISTIVIT...

SILICON-ON-INSULATOR (SOI) STRUCTURE CONFIGURED FOR REDUCED HARMONI...

SILICON-ON-INSULATOR (SOI) STRUCTURE CONFIGURED FOR REDUCED HARMONI...

Integration of Multiple Gate Oxides with Shallow Trench Isolation M...

DESIGN STRUCTURE AND METHOD FOR BURIED INDUCTORS FOR ULTRA-HIGH RES...

TRENCH FORMING METHOD AND STRUCTURE

SOI SUBSTRATE CONTACT WITH EXTENDED SILICIDE AREA

Design Structure and Method for Buried Inductors for Ultra-High Res...

HIGH RESISTIVITY SOI BASE WAFER USING THERMALLY ANNEALED SUBSTRATE

SOI SUBSTRATE CONTACT WITH EXTENDED SILICIDE AREA

SOI SUBSTRATE CONTACT WITH EXTENDED SILICIDE AREA

THROUGH VIA IN ULTRA HIGH RESISTIVITY WAFER AND RELATED METHODS

A METHOD AND APPARATUS FOR CORRECTING GRAVITATIONAL SAG IN PHOTOMAS...

Antifuses and methods for forming the same

ELECTRONIC FUSE STRUCTURE AND METHOD OF MANUFACTURING