Maxwell Walthour Lippitt III

Person

Orlando, FL, US

People

Patents Grantslast 30 patents

Information Patent Grant
Multiple electrode layer backend stacked capacitor
- Patent number 8,497,565
- Issue date Jul 30, 2013
- Texas Instruments Incorporated
- Byron Lovell Willaims
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor contact formed concurrently with bond pad metallization
- Patent number 8,431,463
- Issue date Apr 30, 2013
- Texas Instruments Incorporated
- Maxwell Walthour Lippitt
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS AND APPARATUS FOR FORMING A POLYSILICON CAPACITOR
- Publication number 20080246070
- Publication date Oct 9, 2008
- Byron Lovell Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR FABRICATING AN INTEGRATED CIRCUIT
- Publication number 20080207006
- Publication date Aug 28, 2008
- James Scott Martin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit with metal silicide regions
- Publication number 20070252220
- Publication date Nov 1, 2007
- Agere Systems Inc.
- Yuanning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High density, high Q capacitor on top of a protective layer
- Publication number 20070075348
- Publication date Apr 5, 2007
- Texas Instrument Incorporated
- Byron Lovell Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-dispersive high density polysilicon capacitor utilizing amorpho...
- Publication number 20060199328
- Publication date Sep 7, 2006
- Texas Instruments, Incorporated
- Maxwell W. Lippitt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Temperature optimization of a physical vapor deposition process
- Publication number 20050023133
- Publication date Feb 3, 2005
- Maxwell W. Lippitt
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method for forming metal silicide regions in an integrated circuit
- Publication number 20040053485
- Publication date Mar 18, 2004
- Yuanning Chen
- H01 - BASIC ELECTRIC ELEMENTS

Maxwell Walthour Lippitt III

Person

Patents Grantslast 30 patents

Multiple electrode layer backend stacked capacitor

Capacitor contact formed concurrently with bond pad metallization

Patents Applicationslast 30 patents

METHODS AND APPARATUS FOR FORMING A POLYSILICON CAPACITOR

PROCESS FOR FABRICATING AN INTEGRATED CIRCUIT

Integrated circuit with metal silicide regions

High density, high Q capacitor on top of a protective layer

Non-dispersive high density polysilicon capacitor utilizing amorpho...

Temperature optimization of a physical vapor deposition process

Method for forming metal silicide regions in an integrated circuit