Mayumi Morizuka

Person

Kawasaki-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Nitride semiconductor device
- Patent number 9,865,724
- Issue date Jan 9, 2018
- Kabushiki Kaisha Toshiba
- Mayumi Morizuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor (HEMT) capable of absorbing a sto...
- Patent number 9,484,429
- Issue date Nov 1, 2016
- Kabushiki Kaisha Toshiba
- Yasuhiro Isobe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor Schottky diode and method for manufacturing same
- Patent number 9,331,169
- Issue date May 3, 2016
- Kabushiki Kaisha Toshiba
- Mayumi Morizuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor (HEMT) capable of absorbing a sto...
- Patent number 9,136,346
- Issue date Sep 15, 2015
- Kabushiki Kaisha Toshiba
- Yasuhiro Isobe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor Schottky diode and method for manufacturing same
- Patent number 9,059,327
- Issue date Jun 16, 2015
- Kabushika Kaisha Toshiba
- Mayumi Morizuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 8,969,917
- Issue date Mar 3, 2015
- Kabushiki Kaisha Toshiba
- Mayumi Morizuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,754,420
- Issue date Jun 17, 2014
- Kabushiki Kaisha Toshiba
- Kentaro Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a voltage controlled oscillator
- Patent number 7,490,390
- Issue date Feb 17, 2009
- Kabushiki Kaisha Toshiba
- Takashi Kawakubo
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Voltage controlled oscillator, frequency synthesizer and communicat...
- Patent number 7,221,920
- Issue date May 22, 2007
- Kabushiki Kaisha Toshiba
- Kazuhide Abe
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Voltage controlled oscillator
- Patent number 7,211,933
- Issue date May 1, 2007
- Kabushiki Kaisha Toshiba
- Takashi Kawakubo
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
High electron mobility transistor and method of manufacturing the same
- Patent number 6,908,799
- Issue date Jun 21, 2005
- Kabushiki Kaisha Toshiba
- Mayumi Morizuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a high electron mobility transistor
- Patent number 6,689,652
- Issue date Feb 10, 2004
- Kabushiki Kaisha Toshiba
- Mayumi Morizuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor
- Patent number 6,555,851
- Issue date Apr 29, 2003
- Kabushiki Kaisha Toshiba
- Mayumi Morizuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and power amplifier
- Patent number 6,489,628
- Issue date Dec 3, 2002
- Kabushiki Kaisha Toshiba
- Mayumi Morizuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-frequency power amplifier and mobile communication device usin...
- Patent number 6,134,424
- Issue date Oct 17, 2000
- Kabushiki Kaisha Toshiba
- Kazuya Nishihori
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Field effect transistor and high-frequency power amplifier having same
- Patent number 6,037,619
- Issue date Mar 14, 2000
- Kabushiki Kaisha Toshiba
- Mayumi Morizuka
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20150325680
- Publication date Nov 12, 2015
- KABUSHIKI KAISHA TOSHIBA
- Yasuhiro ISOBE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SCHOTTKY DIODE AND METHOD FOR MANUFACTURING SAME
- Publication number 20150214326
- Publication date Jul 30, 2015
- Kabushiki Kaisha Toshiba
- Mayumi MORIZUKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20140117375
- Publication date May 1, 2014
- KABUSHIKI KAISHA TOSHIBA
- Yasuhiro ISOBE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SCHOTTKY DIODE AND METHOD FOR MANUFACTURING SAME
- Publication number 20130256688
- Publication date Oct 3, 2013
- Kabushiki Kaisha Toshiba
- Mayumi MORIZUKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20130256753
- Publication date Oct 3, 2013
- Kabushiki Kaisha Toshiba
- Mayumi MORIZUKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20130062611
- Publication date Mar 14, 2013
- Kabushiki Kaisha Toshiba
- Kentaro IKEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VOLTAGE CONTROLLED OSCILLATOR
- Publication number 20070209176
- Publication date Sep 13, 2007
- Takashi Kawakubo
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Voltage controlled oscillator
- Publication number 20050099236
- Publication date May 12, 2005
- Takashi Kawakubo
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Voltage controlled oscillator, frequency synthesizer and communicat...
- Publication number 20050059375
- Publication date Mar 17, 2005
- Kabushiki Kaisha Toshiba
- Kazuhide Abe
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
High electron mobility transistor and method of manufacturing the same
- Publication number 20040061130
- Publication date Apr 1, 2004
- Mayumi Morizuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High electron mobility transistor and method of manufacturing the same
- Publication number 20030162339
- Publication date Aug 28, 2003
- Mayumi Morizuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High electron mobility transistor and method of manufacturing the same
- Publication number 20010025965
- Publication date Oct 4, 2001
- Mayumi Morizuka
- H01 - BASIC ELECTRIC ELEMENTS

Mayumi Morizuka

Person

Patents Grantslast 30 patents

Nitride semiconductor device

High electron mobility transistor (HEMT) capable of absorbing a sto...

Nitride semiconductor Schottky diode and method for manufacturing same

High electron mobility transistor (HEMT) capable of absorbing a sto...

Nitride semiconductor Schottky diode and method for manufacturing same

Semiconductor device and method for manufacturing same

Semiconductor device

Method of manufacturing a voltage controlled oscillator

Voltage controlled oscillator, frequency synthesizer and communicat...

Voltage controlled oscillator

High electron mobility transistor and method of manufacturing the same

Method of manufacturing a high electron mobility transistor

High electron mobility transistor

High electron mobility transistor and power amplifier

High-frequency power amplifier and mobile communication device usin...

Field effect transistor and high-frequency power amplifier having same

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

NITRIDE SEMICONDUCTOR SCHOTTKY DIODE AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

NITRIDE SEMICONDUCTOR SCHOTTKY DIODE AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR DEVICE

VOLTAGE CONTROLLED OSCILLATOR

Voltage controlled oscillator

Voltage controlled oscillator, frequency synthesizer and communicat...

High electron mobility transistor and method of manufacturing the same

High electron mobility transistor and method of manufacturing the same

High electron mobility transistor and method of manufacturing the same