Meng-Jaw Cherng

Person

Shung Hsi, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method for making polycide-to-polycide low contact resistance conta...
- Patent number 6,351,037
- Issue date Feb 26, 2002
- Vanguard International Semiconductor Corporation
- Ing-Ruey Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making polycide-to-polycide low contact resistance conta...
- Patent number 6,150,247
- Issue date Nov 21, 2000
- Vanguard International Semiconductor Corporation
- Ing-Ruey Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a passivation layer for integrated circuits
- Patent number 5,943,599
- Issue date Aug 24, 1999
- Vanguard International Semiconductor Corporation
- Liang-Gi Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Small contacts for ultra large scale integration semiconductor devi...
- Patent number 5,874,359
- Issue date Feb 23, 1999
- Industrial Technology Research Institute
- Ing-Ruey Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for etching polymer-assisted reduced small contacts for ultr...
- Patent number 5,719,089
- Issue date Feb 17, 1998
- Vanguard International Semiconductor Corporation
- Meng-Jaw Cherng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a multiple walled crown capacitor of a semic...
- Patent number 5,712,202
- Issue date Jan 27, 1998
- Vanguard International Semiconductor Corporation
- Ing-Ruey Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing crown-shaped storage capacitors on dynamic...
- Patent number 5,700,731
- Issue date Dec 23, 1997
- Vanguard International Semiconductor Corporation
- John C. H. Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating crown capacitors for a dram cell
- Patent number 5,543,345
- Issue date Aug 6, 1996
- Vanguard International Semiconductor Corp.
- Ing-Ruey Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating DRAM cells having fin-type stacked storage c...
- Patent number 5,491,104
- Issue date Feb 13, 1996
- Industrial Technology Research Institute
- William W. Y. Lee
- H01 - BASIC ELECTRIC ELEMENTS

Meng-Jaw Cherng

Person

Patents Grantslast 30 patents

Method for making polycide-to-polycide low contact resistance conta...

Method for making polycide-to-polycide low contact resistance conta...

Method of fabricating a passivation layer for integrated circuits

Small contacts for ultra large scale integration semiconductor devi...

Method for etching polymer-assisted reduced small contacts for ultr...

Method for fabricating a multiple walled crown capacitor of a semic...

Method for manufacturing crown-shaped storage capacitors on dynamic...

Method for fabricating crown capacitors for a dram cell

Method for fabricating DRAM cells having fin-type stacked storage c...