Miaomiao Wang

Person

Albany, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Electrostatic discharge diode having dielectric isolation layer
- Patent number 12,119,341
- Issue date Oct 15, 2024
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate contact for VTFETs
- Patent number 12,107,147
- Issue date Oct 1, 2024
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistance tunable fuse structure formed by embedded thin metal layers
- Patent number 12,100,653
- Issue date Sep 24, 2024
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistor with ferroelectric region
- Patent number 11,973,141
- Issue date Apr 30, 2024
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar devices with consistent base dielectric
- Patent number 11,908,743
- Issue date Feb 20, 2024
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked complementary field effect transistors
- Patent number 11,869,812
- Issue date Jan 9, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Decoupling BTI and HCI mechanism in ring oscillator
- Patent number 11,789,064
- Issue date Oct 17, 2023
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layout design for threshold voltage tuning
- Patent number 11,694,958
- Issue date Jul 4, 2023
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistance tunable fuse structure formed by embedded thin metal layers
- Patent number 11,676,894
- Issue date Jun 13, 2023
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistance tunable fuse structure formed by embedded thin metal layers
- Patent number 10,957,642
- Issue date Mar 23, 2021
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
External resistance reduction with embedded bottom source/drain for...
- Patent number 10,903,318
- Issue date Jan 26, 2021
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stack reliability in vertical transport field effect transistors
- Patent number 10,833,172
- Issue date Nov 10, 2020
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density antifuse co-integrated with vertical FET
- Patent number 10,651,123
- Issue date May 12, 2020
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
External resistance reduction with embedded bottom source/drain for...
- Patent number 10,636,874
- Issue date Apr 28, 2020
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density antifuse co-integrated with vertical FET
- Patent number 10,453,792
- Issue date Oct 22, 2019
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Parasitic capacitance reducing contact structure in a finFET
- Patent number 10,396,183
- Issue date Aug 27, 2019
- International Business Machines Corporation
- Miaomiao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Parasitic capacitance reducing contact structure in a finFET
- Patent number 10,388,768
- Issue date Aug 20, 2019
- International Business Machines Corporation
- Miaomiao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Parasitic capacitance reducing contact structure in a finFET
- Patent number 10,388,769
- Issue date Aug 20, 2019
- International Business Machines Corporation
- Miaomiao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal FinFET anti-fuse
- Patent number 10,304,841
- Issue date May 28, 2019
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge protection using vertical fin CMOS technology
- Patent number 10,276,558
- Issue date Apr 30, 2019
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Parasitic capacitance reducing contact structure in a finFET
- Patent number 10,038,076
- Issue date Jul 31, 2018
- International Business Machines Corporation
- Miaomiao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal FinFET anti-fuse
- Patent number 10,008,507
- Issue date Jun 26, 2018
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-k and p-type work function metal first fabrication process hav...
- Patent number 9,876,089
- Issue date Jan 23, 2018
- International Business Machines Corporation
- Jin Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual FIN integration for electron and hole mobility enhancement
- Patent number 9,859,281
- Issue date Jan 2, 2018
- International Business Machines Corporation
- Chia-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual fin integration for electron and hole mobility enhancement
- Patent number 9,728,537
- Issue date Aug 8, 2017
- International Business Machines Corporation
- Chia-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual fin integration for electron and hole mobility enhancement
- Patent number 9,704,867
- Issue date Jul 11, 2017
- International Business Machines Corporation
- Chia-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-k and p-type work function metal first fabrication process hav...
- Patent number 9,570,318
- Issue date Feb 14, 2017
- International Business Machines Corporation
- Jin Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual fin integration for electron and hole mobility enhancement
- Patent number 9,437,445
- Issue date Sep 6, 2016
- International Business Machines Corporation
- Chia-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTOR GATE STACK FORMATION
- Publication number 20240234516
- Publication date Jul 11, 2024
- International Business Machines Corporation
- HUIMEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INNER SPACER RELIABILITY MACRO DESIGN AND WELL CONTACT FORMATION
- Publication number 20240113200
- Publication date Apr 4, 2024
- International Business Machines Corporation
- HUIMEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTECTION DIODE TO PREVENT CHARGE DAMAGE DURING MOL
- Publication number 20240096871
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric Film with Buffer Layers for Improved Reliability of M...
- Publication number 20230420491
- Publication date Dec 28, 2023
- International Business Machines Corporation
- Kisik Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF HEATING EXTRACTION DESIGN AND METHODOLOGY WITH POWER CONSUMPTI...
- Publication number 20230417604
- Publication date Dec 28, 2023
- International Business Machines Corporation
- HUIMEI ZHOU
- G01 - MEASURING TESTING
Information Patent Application
GATE-ALL-AROUND DEVICES HAVING DIFFERENT SPACER THICKNESSES
- Publication number 20230411392
- Publication date Dec 21, 2023
- International Business Machines Corporation
- HUIMEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET PULL-UP TRANSISTOR IN SRAM
- Publication number 20230320056
- Publication date Oct 5, 2023
- International Business Machines Corporation
- HUIMEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTANCE TUNABLE FUSE STRUCTURE FORMED BY EMBEDDED THIN METAL LAYERS
- Publication number 20230268271
- Publication date Aug 24, 2023
- International Business Machines Corporation
- Alexander REZNICEK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING STACKED POWER RAILS
- Publication number 20230207622
- Publication date Jun 29, 2023
- International Business Machines Corporation
- HUIMEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEPARATE GATE COMPLEMENTARY FIELD-EFFECT TRANSISTOR
- Publication number 20230197813
- Publication date Jun 22, 2023
- International Business Machines Corporation
- HUIMEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATING GATE-ALL-AROUND NANOSHEET TRANSISTORS AND COMB NANOS...
- Publication number 20230187514
- Publication date Jun 15, 2023
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE CONTACT FOR VTFETS
- Publication number 20230187533
- Publication date Jun 15, 2023
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reliability Macros for Contact Over Active Gate Layout Designs
- Publication number 20230160944
- Publication date May 25, 2023
- International Business Machines Corporation
- Huimei ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BURIED POWER RAIL FORMATION FOR SEMICONDUCTOR DEVICES
- Publication number 20230117743
- Publication date Apr 20, 2023
- International Business Machines Corporation
- HUIMEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE DIODE HAVING DIELECTRIC ISOLATION LAYER
- Publication number 20230110825
- Publication date Apr 13, 2023
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED COMPLEMENTARY FIELD EFFECT TRANSISTORS
- Publication number 20230103999
- Publication date Apr 6, 2023
- International Business Machines Corporation
- HUIMEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLANAR DEVICES WITH CONSISTENT BASE DIELECTRIC
- Publication number 20230102261
- Publication date Mar 30, 2023
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED COMPLEMENTARY FIELD EFFECT TRANSISTORS
- Publication number 20230065715
- Publication date Mar 2, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET TRANSISTOR WITH FERROELECTRIC REGION
- Publication number 20230041159
- Publication date Feb 9, 2023
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Layout Design for Threshold Voltage Tuning
- Publication number 20210384139
- Publication date Dec 9, 2021
- International Business Machines Corporation
- Huimei ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTANCE TUNABLE FUSE STRUCTURE FORMED BY EMBEDDED THIN METAL LAYERS
- Publication number 20210159173
- Publication date May 27, 2021
- International Business Machines Corporation
- Alexander REZNICEK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTANCE TUNABLE FUSE STRUCTURE FORMED BY EMBEDDED THIN METAL LAYERS
- Publication number 20210090996
- Publication date Mar 25, 2021
- International Business Machines Corporation
- Alexander REZNICEK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTERNAL RESISTANCE REDUCTION WITH EMBEDDED BOTTOM SOURCE/DRAIN FOR...
- Publication number 20200168706
- Publication date May 28, 2020
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTERNAL RESISTANCE REDUCTION WITH EMBEDDED BOTTOM SOURCE/DRAIN FOR...
- Publication number 20200075723
- Publication date Mar 5, 2020
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STACK RELIABILITY IN VERTICAL TRANSPORT FIELD EFFECT TRANSISTORS
- Publication number 20200058766
- Publication date Feb 20, 2020
- International Business Machines Corporation
- Choonghyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL EMBEDDED LOW-RESISTANCE BEOL ANTIFUSE
- Publication number 20190326215
- Publication date Oct 24, 2019
- International Business Machines Corporation
- Alexander REZNICEK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY ANTIFUSE CO-INTEGRATED WITH VERTICAL FET
- Publication number 20190295949
- Publication date Sep 26, 2019
- International Business Machines Corporation
- Alexander REZNICEK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY ANTIFUSE CO-INTEGRATED WITH VERTICAL FET
- Publication number 20190295950
- Publication date Sep 26, 2019
- International Business Machines Corporation
- Alexander REZNICEK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE PROTECTION USING VERTICAL FIN CMOS TECHNOLOGY
- Publication number 20190131292
- Publication date May 2, 2019
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL FINFET ANTI-FUSE
- Publication number 20180247945
- Publication date Aug 30, 2018
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS

Miaomiao Wang

Person

Patents Grantslast 30 patents

Electrostatic discharge diode having dielectric isolation layer

Self-aligned gate contact for VTFETs

Resistance tunable fuse structure formed by embedded thin metal layers

Nanosheet transistor with ferroelectric region

Planar devices with consistent base dielectric

Stacked complementary field effect transistors

Decoupling BTI and HCI mechanism in ring oscillator

Layout design for threshold voltage tuning

Resistance tunable fuse structure formed by embedded thin metal layers

Resistance tunable fuse structure formed by embedded thin metal layers

External resistance reduction with embedded bottom source/drain for...

Gate stack reliability in vertical transport field effect transistors

High density antifuse co-integrated with vertical FET

External resistance reduction with embedded bottom source/drain for...

High density antifuse co-integrated with vertical FET

Parasitic capacitance reducing contact structure in a finFET

Parasitic capacitance reducing contact structure in a finFET

Parasitic capacitance reducing contact structure in a finFET

Metal FinFET anti-fuse

Electrostatic discharge protection using vertical fin CMOS technology

Parasitic capacitance reducing contact structure in a finFET

Metal FinFET anti-fuse

High-k and p-type work function metal first fabrication process hav...

Dual FIN integration for electron and hole mobility enhancement

Dual fin integration for electron and hole mobility enhancement

Dual fin integration for electron and hole mobility enhancement

High-k and p-type work function metal first fabrication process hav...

Dual fin integration for electron and hole mobility enhancement

Patents Applicationslast 30 patents

TRANSISTOR GATE STACK FORMATION

INNER SPACER RELIABILITY MACRO DESIGN AND WELL CONTACT FORMATION

PROTECTION DIODE TO PREVENT CHARGE DAMAGE DURING MOL

Ferroelectric Film with Buffer Layers for Improved Reliability of M...

SELF HEATING EXTRACTION DESIGN AND METHODOLOGY WITH POWER CONSUMPTI...

GATE-ALL-AROUND DEVICES HAVING DIFFERENT SPACER THICKNESSES

NANOSHEET PULL-UP TRANSISTOR IN SRAM

RESISTANCE TUNABLE FUSE STRUCTURE FORMED BY EMBEDDED THIN METAL LAYERS

SEMICONDUCTOR STRUCTURE HAVING STACKED POWER RAILS

SEPARATE GATE COMPLEMENTARY FIELD-EFFECT TRANSISTOR

CO-INTEGRATING GATE-ALL-AROUND NANOSHEET TRANSISTORS AND COMB NANOS...

SELF-ALIGNED GATE CONTACT FOR VTFETS

Reliability Macros for Contact Over Active Gate Layout Designs

SELF-ALIGNED BURIED POWER RAIL FORMATION FOR SEMICONDUCTOR DEVICES

ELECTROSTATIC DISCHARGE DIODE HAVING DIELECTRIC ISOLATION LAYER

STACKED COMPLEMENTARY FIELD EFFECT TRANSISTORS

PLANAR DEVICES WITH CONSISTENT BASE DIELECTRIC

STACKED COMPLEMENTARY FIELD EFFECT TRANSISTORS

NANOSHEET TRANSISTOR WITH FERROELECTRIC REGION

Layout Design for Threshold Voltage Tuning

RESISTANCE TUNABLE FUSE STRUCTURE FORMED BY EMBEDDED THIN METAL LAYERS

RESISTANCE TUNABLE FUSE STRUCTURE FORMED BY EMBEDDED THIN METAL LAYERS

EXTERNAL RESISTANCE REDUCTION WITH EMBEDDED BOTTOM SOURCE/DRAIN FOR...

EXTERNAL RESISTANCE REDUCTION WITH EMBEDDED BOTTOM SOURCE/DRAIN FOR...

GATE STACK RELIABILITY IN VERTICAL TRANSPORT FIELD EFFECT TRANSISTORS

METAL EMBEDDED LOW-RESISTANCE BEOL ANTIFUSE

HIGH DENSITY ANTIFUSE CO-INTEGRATED WITH VERTICAL FET

HIGH DENSITY ANTIFUSE CO-INTEGRATED WITH VERTICAL FET

ELECTROSTATIC DISCHARGE PROTECTION USING VERTICAL FIN CMOS TECHNOLOGY

METAL FINFET ANTI-FUSE