Michael P. Brassington

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Alternative silicon chip geometries for integrated circuits
- Patent number 5,859,448
- Issue date Jan 12, 1999
- Sun Microsystems, Inc.
- Michael P. Brassington
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric low power MOS devices
- Patent number 5,780,912
- Issue date Jul 14, 1998
- Sun Microsystems, Inc.
- James B. Burr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low power, high performance junction transistor
- Patent number 5,773,863
- Issue date Jun 30, 1998
- Sun Microsystems, Inc.
- James B. Burr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low threshold voltage, high performance junction transistor
- Patent number 5,719,422
- Issue date Feb 17, 1998
- Sun Microsystems, Inc.
- James B. Burr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making asymmetric low power MOS devices
- Patent number 5,650,340
- Issue date Jul 22, 1997
- Sun Microsystems, Inc.
- James B. Burr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a low power, high performance junction transistor
- Patent number 5,622,880
- Issue date Apr 22, 1997
- Sun Microsystems, Inc.
- James B. Burr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory cell arrangement having a split capacitor plat...
- Patent number 5,350,705
- Issue date Sep 27, 1994
- National Semiconductor Corporation
- Michael P. Brassington
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a polysilicon emitter and a polysilicon gat...
- Patent number 5,179,031
- Issue date Jan 12, 1993
- National Semiconductor Corporation
- Michael P. Brassington
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon emitter and a polysilicon gate using the same etch of p...
- Patent number 5,124,817
- Issue date Jun 23, 1992
- National Semiconductor Corporation
- Michael P. Brassington
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of polysilicon layer for local interconnect in a CMOS or BiCMOS...
- Patent number 5,082,796
- Issue date Jan 21, 1992
- National Semiconductor Corporation
- Monir H. El-Diwany
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of a polysilicon layer for local interconnect in a CMOS or BICM...
- Patent number 5,081,518
- Issue date Jan 14, 1992
- National Semiconductor Corporation
- Monir H. El-Diwany
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a polysilicon emitter and a polysilicon gat...
- Patent number 5,001,081
- Issue date Mar 19, 1991
- National Semiconductor Corp.
- Prateep Tuntasood
- H01 - BASIC ELECTRIC ELEMENTS

Michael P. Brassington

Person

Patents Grantslast 30 patents

Alternative silicon chip geometries for integrated circuits

Asymmetric low power MOS devices

Low power, high performance junction transistor

Low threshold voltage, high performance junction transistor

Method of making asymmetric low power MOS devices

Method of making a low power, high performance junction transistor

Ferroelectric memory cell arrangement having a split capacitor plat...

Method of manufacturing a polysilicon emitter and a polysilicon gat...

Polysilicon emitter and a polysilicon gate using the same etch of p...

Use of polysilicon layer for local interconnect in a CMOS or BiCMOS...

Use of a polysilicon layer for local interconnect in a CMOS or BICM...

Method of manufacturing a polysilicon emitter and a polysilicon gat...