Michael P. Ganz

Person

Fishkill, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transistor device structures with retrograde wells in CMOS applicat...
- Patent number 10,483,172
- Issue date Nov 19, 2019
- GLOBALFOUNDRIES Inc.
- Vara G. Reddy Vakada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET semiconductor structures and methods of fabricating same
- Patent number 10,096,488
- Issue date Oct 9, 2018
- GLOBALFOUNDRIES Inc.
- Michael Ganz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride spacer for protecting a fin-shaped field effect transistor...
- Patent number 9,978,588
- Issue date May 22, 2018
- GLOBALFOUNDRIES Inc.
- Michael Ganz
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Methods of forming transistors with retrograde wells in CMOS applic...
- Patent number 9,852,954
- Issue date Dec 26, 2017
- GLOBALFOUNDRIES Inc.
- Vara G. Reddy Vakada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET semiconductor structures and methods of fabricating same
- Patent number 9,812,336
- Issue date Nov 7, 2017
- GLOBALFOUNDRIES Inc.
- Michael Ganz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Blanket EPI super steep retrograde well formation without Si recess
- Patent number 9,362,357
- Issue date Jun 7, 2016
- GLOBALFOUNDRIES Inc.
- Laegu Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride spacer for protecting a fin-shaped field effect transistor...
- Patent number 9,306,036
- Issue date Apr 5, 2016
- GLOBALFOUNDRIES Inc.
- Michael Ganz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming transistors with retrograde wells in CMOS applic...
- Patent number 9,209,181
- Issue date Dec 8, 2015
- GLOBALFOUNDRIES Inc.
- Vara G. Reddy Vakada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Blanket EPI super steep retrograde well formation without Si recess
- Patent number 9,099,525
- Issue date Aug 4, 2015
- GLOBALFOUNDRIES Inc.
- Laegu Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming step doping channel profile for super steep retro...
- Patent number 9,099,380
- Issue date Aug 4, 2015
- GLOBALFOUNDRIES Inc.
- Vara Govindeswara Reddy Vakada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming step doping channel profile for super steep retro...
- Patent number 8,916,442
- Issue date Dec 23, 2014
- GLOBALFOUNDRIES Inc.
- Vara Govindeswara Reddy Vakada
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTOR DEVICE STRUCTURES WITH RETROGRADE WELLS IN CMOS APPLICAT...
- Publication number 20180047641
- Publication date Feb 15, 2018
- GLOBALFOUNDRIES INC.
- Vara G. Reddy Vakada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET SEMICONDUCTOR STRUCTURES AND METHODS OF FABRICATING SAME
- Publication number 20170263733
- Publication date Sep 14, 2017
- GLOBALFOUNDRIES INC.
- Michael GANZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SPACER FOR PROTECTING A FIN-SHAPED FIELD EFFECT TRANSISTOR...
- Publication number 20160181092
- Publication date Jun 23, 2016
- GLOBALFOUNDRIES INC.
- Michael GANZ
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHODS OF FORMING TRANSISTORS WITH RETROGRADE WELLS IN CMOS APPLIC...
- Publication number 20160035630
- Publication date Feb 4, 2016
- GLOBALFOUNDRIES INC.
- Vara G. Reddy Vakada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BLANKET EPI SUPER STEEP RETROGRADE WELL FORMATION WITHOUT Si RECESS
- Publication number 20150249129
- Publication date Sep 3, 2015
- GLOBALFOUNDRIES INC.
- Laegu KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPANT DIFFUSION BARRIER TO FORM ISOLATED SOURCE/DRAINS IN A SEMICO...
- Publication number 20150214345
- Publication date Jul 30, 2015
- GLOBALFOUNDRIES INC.
- Jing Wan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET SEMICONDUCTOR STRUCTURES AND METHODS OF FABRICATING SAME
- Publication number 20150115371
- Publication date Apr 30, 2015
- GLOBALFOUNDRIES INC.
- Michael GANZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH SIGMA CAVITY WITH MULTIPLE EPITAXIAL MATERIAL REGIONS
- Publication number 20150097197
- Publication date Apr 9, 2015
- GLOBALFOUNDRIES INC.
- Michael Ganz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENLARGED FIN TIP PROFILE FOR FINS OF A FIELD EFFECT TRANSISTOR (FIN...
- Publication number 20150076654
- Publication date Mar 19, 2015
- GLOBAL FOUNDRIES Inc.
- Michael Ganz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING STEP DOPING CHANNEL PROFILE FOR SUPER STEEP RETRO...
- Publication number 20150053981
- Publication date Feb 26, 2015
- GLOBALFOUNDRIES INC.
- Vara Govindeswara Reddy Vakada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SPACER FOR PROTECTING A FIN-SHAPED FIELD EFFECT TRANSISTOR...
- Publication number 20150035016
- Publication date Feb 5, 2015
- GLOBALFOUNDRIES INC.
- Michael Ganz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING TRANSISTORS WITH RETROGRADE WELLS IN CMOS APPLIC...
- Publication number 20140367787
- Publication date Dec 18, 2014
- Vara G. Reddy Vakada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING STEP DOPING CHANNEL PROFILE FOR SUPER STEEP RETRO...
- Publication number 20140197411
- Publication date Jul 17, 2014
- GLOBAL FOUNDERIES INC.
- Vara Govindeswara Reddy VAKADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BLANKET EPI SUPER STEEP RETROGRADE WELL FORMATION WITHOUT Si RECESS
- Publication number 20140183551
- Publication date Jul 3, 2014
- GLOBALFOUNDRIES INC.
- Laegu Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF TAILORING SILICON TRENCH PROFILE FOR SUPER STEEP RETROGRA...
- Publication number 20140070358
- Publication date Mar 13, 2014
- GLOBALFOUNDRIES INC.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS

Michael P. Ganz

Person

Patents Grantslast 30 patents

Transistor device structures with retrograde wells in CMOS applicat...

FinFET semiconductor structures and methods of fabricating same

Nitride spacer for protecting a fin-shaped field effect transistor...

Methods of forming transistors with retrograde wells in CMOS applic...

FinFET semiconductor structures and methods of fabricating same

Blanket EPI super steep retrograde well formation without Si recess

Nitride spacer for protecting a fin-shaped field effect transistor...

Methods of forming transistors with retrograde wells in CMOS applic...

Blanket EPI super steep retrograde well formation without Si recess

Method of forming step doping channel profile for super steep retro...

Method of forming step doping channel profile for super steep retro...

Patents Applicationslast 30 patents

TRANSISTOR DEVICE STRUCTURES WITH RETROGRADE WELLS IN CMOS APPLICAT...

FINFET SEMICONDUCTOR STRUCTURES AND METHODS OF FABRICATING SAME

NITRIDE SPACER FOR PROTECTING A FIN-SHAPED FIELD EFFECT TRANSISTOR...

METHODS OF FORMING TRANSISTORS WITH RETROGRADE WELLS IN CMOS APPLIC...

BLANKET EPI SUPER STEEP RETROGRADE WELL FORMATION WITHOUT Si RECESS

DOPANT DIFFUSION BARRIER TO FORM ISOLATED SOURCE/DRAINS IN A SEMICO...

FINFET SEMICONDUCTOR STRUCTURES AND METHODS OF FABRICATING SAME

FINFET WITH SIGMA CAVITY WITH MULTIPLE EPITAXIAL MATERIAL REGIONS

ENLARGED FIN TIP PROFILE FOR FINS OF A FIELD EFFECT TRANSISTOR (FIN...

METHOD OF FORMING STEP DOPING CHANNEL PROFILE FOR SUPER STEEP RETRO...

NITRIDE SPACER FOR PROTECTING A FIN-SHAPED FIELD EFFECT TRANSISTOR...

METHODS OF FORMING TRANSISTORS WITH RETROGRADE WELLS IN CMOS APPLIC...

METHOD OF FORMING STEP DOPING CHANNEL PROFILE FOR SUPER STEEP RETRO...

BLANKET EPI SUPER STEEP RETROGRADE WELL FORMATION WITHOUT Si RECESS

METHOD OF TAILORING SILICON TRENCH PROFILE FOR SUPER STEEP RETROGRA...