Michael S. Adler

Person

Schenectady, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
MOSFET-gated bipolar transistors and thyristors with both turn-on a...
- Patent number 5,014,102
- Issue date May 7, 1991
- General Electric Company
- Michael S. Adler
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Lateral insulated gate bipolar transistors with improved latch-up i...
- Patent number 4,963,951
- Issue date Oct 16, 1990
- General Electric Company
- Michael S. Adler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage integrated circuits
- Patent number 4,958,210
- Issue date Sep 18, 1990
- General Electric Company
- Surinder Krishna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage integrated circuit devices electrically isolated from...
- Patent number 4,868,921
- Issue date Sep 19, 1989
- General Electric Company
- Michael S. Adler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage pull-up device
- Patent number 4,868,620
- Issue date Sep 19, 1989
- Pacific Bell
- James E. Kohl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Piezoelectric switch
- Patent number 4,742,263
- Issue date May 3, 1988
- Pacific Bell
- John D. Harnden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Piezoelectric switch
- Patent number 4,697,118
- Issue date Sep 29, 1987
- General Electric Company
- John D. Harnden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite circuit for power semiconductor switching
- Patent number 4,663,547
- Issue date May 5, 1987
- General Electric Company
- Bantval J. Baliga
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Bidirectional, high-speed power MOSFET devices with deep level reco...
- Patent number 4,656,493
- Issue date Apr 7, 1987
- General Electric Company
- Michael S. Adler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of integrated circuit with complementary, dielectricall...
- Patent number 4,593,458
- Issue date Jun 10, 1986
- General Electric Company
- Michael S. Adler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage semiconductor devices comprising integral JFET
- Patent number 4,494,134
- Issue date Jan 15, 1985
- General Electric Company
- Eric J. Wildi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor device with a base region hav...
- Patent number 4,443,931
- Issue date Apr 24, 1984
- General Electric Company
- Bantval J. Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Load control and switching circuits and remote/local control system...
- Patent number 4,321,508
- Issue date Mar 23, 1982
- General Electric Company
- Michael S. Adler
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
High switching speed P-N junction devices with recombination means...
- Patent number 4,259,683
- Issue date Mar 31, 1981
- General Electric Company
- Michael S. Adler
- H01 - BASIC ELECTRIC ELEMENTS

Michael S. Adler

Person

Patents Grantslast 30 patents

MOSFET-gated bipolar transistors and thyristors with both turn-on a...

Lateral insulated gate bipolar transistors with improved latch-up i...

High voltage integrated circuits

High voltage integrated circuit devices electrically isolated from...

High-voltage pull-up device

Piezoelectric switch

Piezoelectric switch

Composite circuit for power semiconductor switching

Bidirectional, high-speed power MOSFET devices with deep level reco...

Fabrication of integrated circuit with complementary, dielectricall...

High voltage semiconductor devices comprising integral JFET

Method of fabricating a semiconductor device with a base region hav...

Load control and switching circuits and remote/local control system...

High switching speed P-N junction devices with recombination means...