Michael Sadd

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Testing disruptive memories
- Patent number 12,051,476
- Issue date Jul 30, 2024
- NXP USA, INC.
- Timothy Strauss
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory with sense amplifiers
- Patent number 11,404,118
- Issue date Aug 2, 2022
- NXP USA, INC.
- Michael A. Sadd
- G11 - INFORMATION STORAGE
Information Patent Grant
Sense path circuitry suitable for magnetic tunnel junction memories
- Patent number 10,410,705
- Issue date Sep 10, 2019
- NXP USA, INC.
- Bruce L. Morton
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems and methods for non-volatile flip flops
- Patent number 10,297,314
- Issue date May 21, 2019
- NXP USA, INC.
- Anirban Roy
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory with a global reference circuit
- Patent number 10,224,088
- Issue date Mar 5, 2019
- NXP USA, INC.
- Jon Scott Choy
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable resistive elements as variable tuning elements
- Patent number 9,935,616
- Issue date Apr 3, 2018
- NXP USA, INC.
- Michael A. Sadd
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Systems and methods for non-volatile flip flops
- Patent number 9,923,553
- Issue date Mar 20, 2018
- NXP USA, INC.
- Anirban Roy
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Resistive non-volatile memory and a method for sensing a memory cel...
- Patent number 9,847,127
- Issue date Dec 19, 2017
- NXP USA, INC.
- Anirban Roy
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with combined non-volatile memory (NVM) and volatile...
- Patent number 9,823,874
- Issue date Nov 21, 2017
- NXP USA, INC.
- Michael A. Sadd
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory (MRAM) and method of operation
- Patent number 9,779,795
- Issue date Oct 3, 2017
- NXP USA, INC.
- Michael A. Sadd
- G11 - INFORMATION STORAGE
Information Patent Grant
Sense path circuitry suitable for magnetic tunnel junction memories
- Patent number 9,773,537
- Issue date Sep 26, 2017
- NXP USA, INC.
- Bruce L. Morton
- G11 - INFORMATION STORAGE
Information Patent Grant
Sense amplifier circuit
- Patent number 9,741,417
- Issue date Aug 22, 2017
- NXP USA, INC.
- Michael A. Sadd
- G11 - INFORMATION STORAGE
Information Patent Grant
Sense amplifier circuit
- Patent number 9,741,435
- Issue date Aug 22, 2017
- NXP USA, INC.
- Jon Scott Choy
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with combined non-volatile memory (NVM) and volatile...
- Patent number 9,697,897
- Issue date Jul 4, 2017
- NXP USA, INC.
- Michael A. Sadd
- G11 - INFORMATION STORAGE
Information Patent Grant
Static random access memory (SRAM) with programmable resistive elem...
- Patent number 9,672,911
- Issue date Jun 6, 2017
- NXP USA, INC.
- Anirban Roy
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory having a plurality of resistive non-volatile memory cells
- Patent number 9,659,623
- Issue date May 23, 2017
- NXP USA, INC.
- Michael Sadd
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile static random access memory (NVSRAM) system having a st...
- Patent number 9,640,256
- Issue date May 2, 2017
- NXP USA, INC.
- Anirban Roy
- G11 - INFORMATION STORAGE
Information Patent Grant
Ternary content addressable memory (TCAM) with programmable resisti...
- Patent number 9,613,701
- Issue date Apr 4, 2017
- FREESCALE SEMICONDUCTOR, INC.
- Anirban Roy
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile dynamic random access memory (NVDRAM) with programming...
- Patent number 9,607,663
- Issue date Mar 28, 2017
- NXP USA, INC.
- Anirban Roy
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile random access memory (NVRAM) with backup control
- Patent number 9,595,329
- Issue date Mar 14, 2017
- NXP USA, INC.
- Anirban Roy
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems and methods for SRAM with backup non-volatile memory that i...
- Patent number 9,576,661
- Issue date Feb 21, 2017
- NXP USA, INC.
- Anirban Roy
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory with program verify and erase verify capability
- Patent number 9,548,116
- Issue date Jan 17, 2017
- NXP USA, INC.
- Anirban Roy
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory (MRAM) and method of operation
- Patent number 9,520,173
- Issue date Dec 13, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Frank K. Baker
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive non-volatile memory cell and method for programming same
- Patent number 9,514,810
- Issue date Dec 6, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Michael A. Sadd
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable resistive elements as variable tuning elements
- Patent number 9,515,635
- Issue date Dec 6, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Michael A. Sadd
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Low-leakage, high-capacitance capacitor structures and method of ma...
- Patent number 9,112,060
- Issue date Aug 18, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Tushar P. Merchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for programming a multi-state non-volatile memory (NVM)
- Patent number 8,842,469
- Issue date Sep 23, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Jon S. Choy
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-transistor floating-body dynamic memory cell
- Patent number 8,498,140
- Issue date Jul 30, 2013
- University of Florida Research Foundation, Inc.
- Jerry G. Fossum
- G11 - INFORMATION STORAGE
Information Patent Grant
Soft program of a non-volatile memory block
- Patent number 8,351,276
- Issue date Jan 8, 2013
- FREESCALE SEMICONDUCTOR, INC.
- Jon S. Choy
- G11 - INFORMATION STORAGE
Information Patent Grant
Reduced-edge radiation-tolerant non-volatile transistor memory cells
- Patent number 7,906,805
- Issue date Mar 15, 2011
- Actel Corporation
- Michael Sadd
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DISTRIBUTED MRAM CONFIGURATION BIT AND METHOD OF REPAIR
- Publication number 20240420796
- Publication date Dec 19, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Syed M. ALAM
- G11 - INFORMATION STORAGE
Information Patent Application
TESTING DISRUPTIVE MEMORIES
- Publication number 20230368859
- Publication date Nov 16, 2023
- NXP USA, Inc.
- Timothy Strauss
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY WITH SENSE AMPLIFIERS
- Publication number 20220238153
- Publication date Jul 28, 2022
- NXP USA, Inc.
- Michael A. Sadd
- G11 - INFORMATION STORAGE
Information Patent Application
SYSTEMS AND METHODS FOR NON-VOLATILE FLIP FLOPS
- Publication number 20180019735
- Publication date Jan 18, 2018
- FREESCALE SEMICONDUCTOR, INC.
- ANIRBAN ROY
- G11 - INFORMATION STORAGE
Information Patent Application
SYSTEMS AND METHODS FOR NON-VOLATILE FLIP FLOPS
- Publication number 20170345491
- Publication date Nov 30, 2017
- FREESCALE SEMICONDUCTOR, INC.
- ANIRBAN ROY
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SENSE PATH CIRCUITRY SUITABLE FOR MAGNETIC TUNNEL JUNCTION MEMORIES
- Publication number 20170337960
- Publication date Nov 23, 2017
- NXP USA, Inc.
- Bruce L. Morton
- G11 - INFORMATION STORAGE
Information Patent Application
SENSE PATH CIRCUITRY SUITABLE FOR MAGNETIC TUNNEL JUNCTION MEMORIES
- Publication number 20170117028
- Publication date Apr 27, 2017
- FREESCALE SEMICONDUCTOR, INC.
- BRUCE L. MORTON
- G11 - INFORMATION STORAGE
Information Patent Application
TERNARY CONTENT ADDRESSABLE MEMORY (TCAM) WITH PROGRAMMABLE RESISTI...
- Publication number 20170062052
- Publication date Mar 2, 2017
- FREESCALE SEMICONDUCTOR, INC.
- ANIRBAN ROY
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMABLE RESISTIVE ELEMENTS AS VARIABLE TUNING ELEMENTS
- Publication number 20170063348
- Publication date Mar 2, 2017
- FREESCALE SEMICONDUCTOR, INC.
- Michael A. SADD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STATIC RANDOM ACCESS MEMORY (SRAM) WITH PROGRAMMABLE RESISTIVE ELEM...
- Publication number 20170062049
- Publication date Mar 2, 2017
- FREESCALE SEMICONDUCTOR, INC.
- ANIRBAN ROY
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE DYNAMIC RANDOM ACCESS MEMORY (NVDRAM) WITH PROGRAMMING...
- Publication number 20170047098
- Publication date Feb 16, 2017
- FREESCALE SEMICONDUCTOR, INC.
- ANIRBAN ROY
- G11 - INFORMATION STORAGE
Information Patent Application
SYSTEMS AND METHODS FOR SRAM WITH BACKUP NON-VOLATILE MEMORY THAT I...
- Publication number 20160343436
- Publication date Nov 24, 2016
- FREESCALE SEMICONDUCTOR, INC.
- ANIRBAN ROY
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WITH COMBINED NON-VOLATILE MEMORY (NVM) AND VOLATILE...
- Publication number 20160246539
- Publication date Aug 25, 2016
- FREESCALE SEMICONDUCTOR, INC.
- MICHAEL A. SADD
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
RESISTIVE MEMORY WITH PROGRAM VERIFY AND ERASE VERIFY CAPABILITY
- Publication number 20160148685
- Publication date May 26, 2016
- FREESCALE SEMICONDUCTOR, INC.
- ANIRBAN ROY
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WITH COMBINED NON-VOLATILE MEMORY (NVM) AND VOLATILE...
- Publication number 20160019964
- Publication date Jan 21, 2016
- MICHAEL A. SADD
- G11 - INFORMATION STORAGE
Information Patent Application
Low-Leakage, High-Capacitance Capacitor Structures and Method of Ma...
- Publication number 20120241909
- Publication date Sep 27, 2012
- Tushar P. Merchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PROGRAMMING A MULTI-STATE NON-VOLATILE MEMORY (NVM)
- Publication number 20120113714
- Publication date May 10, 2012
- Jon S. Choy
- G11 - INFORMATION STORAGE
Information Patent Application
SOFT PROGRAM OF A NON-VOLATILE MEMORY BLOCK
- Publication number 20120014179
- Publication date Jan 19, 2012
- Jon S. Choy
- G11 - INFORMATION STORAGE
Information Patent Application
PUSH-PULL FPGA CELL
- Publication number 20110024821
- Publication date Feb 3, 2011
- Actel Corporation
- Zhigang Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Two-Transistor Floating-Body Dynamic Memory Cell
- Publication number 20100329043
- Publication date Dec 30, 2010
- University of Florida Research Foundation, Inc.
- Jerry G. Fossum
- G11 - INFORMATION STORAGE
Information Patent Application
PUSH-PULL FPGA CELL
- Publication number 20100149873
- Publication date Jun 17, 2010
- Actel Corporation
- Zhigang Wang
- G11 - INFORMATION STORAGE
Information Patent Application
REDUCED-EDGE RADIATION-TOLERANT NON-VOLATILE TRANSISTOR MEMORY CELLS
- Publication number 20100044768
- Publication date Feb 25, 2010
- Actel Corporation
- Michael Sadd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOCRYSTAL NON-VOLATILE MEMORY CELL AND METHOD THEREFOR
- Publication number 20090166712
- Publication date Jul 2, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Ramachandran Muralidhar
- B82 - NANO-TECHNOLOGY
Information Patent Application
SPLIT GATE MEMORY CELL AND METHOD THEREFOR
- Publication number 20090042349
- Publication date Feb 12, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Erwin J. Prinz
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nanocrystal non-volatile memory cell and method therefor
- Publication number 20080121966
- Publication date May 29, 2008
- Ramachandran Muralidhar
- B82 - NANO-TECHNOLOGY
Information Patent Application
NANOCRYSTAL NON-VOLATILE MEMORY CELL AND METHOD THEREFOR
- Publication number 20080121967
- Publication date May 29, 2008
- Ramachandran Muralidhar
- B82 - NANO-TECHNOLOGY
Information Patent Application
Double-gated non-volatile memory and methods for forming thereof
- Publication number 20070178649
- Publication date Aug 2, 2007
- Craig T. Swift
- B82 - NANO-TECHNOLOGY
Information Patent Application
Back-gated semiconductor device with a storage layer and methods fo...
- Publication number 20070134888
- Publication date Jun 14, 2007
- Freescale Semiconductor, Inc.
- Craig T. Swift
- B82 - NANO-TECHNOLOGY
Information Patent Application
Floating gate non-volatile memory and method thereof
- Publication number 20070134867
- Publication date Jun 14, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Michael A. Sadd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Voltage controlled oscillator with a multiple gate transistor and m...
- Publication number 20070085153
- Publication date Apr 19, 2007
- Sriram S. Kalpat
- H03 - BASIC ELECTRONIC CIRCUITRY

Michael Sadd

Person

Patents Grantslast 30 patents

Testing disruptive memories

Memory with sense amplifiers

Sense path circuitry suitable for magnetic tunnel junction memories

Systems and methods for non-volatile flip flops

Memory with a global reference circuit

Programmable resistive elements as variable tuning elements

Systems and methods for non-volatile flip flops

Resistive non-volatile memory and a method for sensing a memory cel...

Memory device with combined non-volatile memory (NVM) and volatile...

Magnetic random access memory (MRAM) and method of operation

Sense path circuitry suitable for magnetic tunnel junction memories

Sense amplifier circuit

Sense amplifier circuit

Memory device with combined non-volatile memory (NVM) and volatile...

Static random access memory (SRAM) with programmable resistive elem...

Memory having a plurality of resistive non-volatile memory cells

Nonvolatile static random access memory (NVSRAM) system having a st...

Ternary content addressable memory (TCAM) with programmable resisti...

Non-volatile dynamic random access memory (NVDRAM) with programming...

Non-volatile random access memory (NVRAM) with backup control

Systems and methods for SRAM with backup non-volatile memory that i...

Resistive memory with program verify and erase verify capability

Magnetic random access memory (MRAM) and method of operation

Resistive non-volatile memory cell and method for programming same

Programmable resistive elements as variable tuning elements

Low-leakage, high-capacitance capacitor structures and method of ma...

Method for programming a multi-state non-volatile memory (NVM)

Two-transistor floating-body dynamic memory cell

Soft program of a non-volatile memory block

Reduced-edge radiation-tolerant non-volatile transistor memory cells

Patents Applicationslast 30 patents

DISTRIBUTED MRAM CONFIGURATION BIT AND METHOD OF REPAIR

TESTING DISRUPTIVE MEMORIES

MEMORY WITH SENSE AMPLIFIERS

SYSTEMS AND METHODS FOR NON-VOLATILE FLIP FLOPS

SYSTEMS AND METHODS FOR NON-VOLATILE FLIP FLOPS

SENSE PATH CIRCUITRY SUITABLE FOR MAGNETIC TUNNEL JUNCTION MEMORIES

SENSE PATH CIRCUITRY SUITABLE FOR MAGNETIC TUNNEL JUNCTION MEMORIES

TERNARY CONTENT ADDRESSABLE MEMORY (TCAM) WITH PROGRAMMABLE RESISTI...

PROGRAMMABLE RESISTIVE ELEMENTS AS VARIABLE TUNING ELEMENTS

STATIC RANDOM ACCESS MEMORY (SRAM) WITH PROGRAMMABLE RESISTIVE ELEM...

NON-VOLATILE DYNAMIC RANDOM ACCESS MEMORY (NVDRAM) WITH PROGRAMMING...

SYSTEMS AND METHODS FOR SRAM WITH BACKUP NON-VOLATILE MEMORY THAT I...

MEMORY DEVICE WITH COMBINED NON-VOLATILE MEMORY (NVM) AND VOLATILE...

RESISTIVE MEMORY WITH PROGRAM VERIFY AND ERASE VERIFY CAPABILITY

MEMORY DEVICE WITH COMBINED NON-VOLATILE MEMORY (NVM) AND VOLATILE...

Low-Leakage, High-Capacitance Capacitor Structures and Method of Ma...

METHOD FOR PROGRAMMING A MULTI-STATE NON-VOLATILE MEMORY (NVM)

SOFT PROGRAM OF A NON-VOLATILE MEMORY BLOCK

PUSH-PULL FPGA CELL

Two-Transistor Floating-Body Dynamic Memory Cell

PUSH-PULL FPGA CELL

REDUCED-EDGE RADIATION-TOLERANT NON-VOLATILE TRANSISTOR MEMORY CELLS

NANOCRYSTAL NON-VOLATILE MEMORY CELL AND METHOD THEREFOR

SPLIT GATE MEMORY CELL AND METHOD THEREFOR

Nanocrystal non-volatile memory cell and method therefor

NANOCRYSTAL NON-VOLATILE MEMORY CELL AND METHOD THEREFOR

Double-gated non-volatile memory and methods for forming thereof

Back-gated semiconductor device with a storage layer and methods fo...

Floating gate non-volatile memory and method thereof

Voltage controlled oscillator with a multiple gate transistor and m...