Michael Wojtowicz

Person

Long Beach, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Actively deformable metamirror
- Patent number 12,181,660
- Issue date Dec 31, 2024
- Northrop Grumman Systems Corporation
- Donald Di Marzio
- G02 - OPTICS
Information Patent Grant
Method of forming a gate contact
- Patent number 9,048,184
- Issue date Jun 2, 2015
- Northrop Grumman Systems Corporation
- Carol O. Namba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leakage barrier for GaN based HEMT active device
- Patent number 8,809,137
- Issue date Aug 19, 2014
- Northrop Grumman Systems Corporation
- Rajinder Randy Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leakage barrier for GaN based HEMT active device
- Patent number 8,809,907
- Issue date Aug 19, 2014
- Northrop Grumman Systems Corporation
- Rajinder Randy Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Direct growth of diamond in backside vias for GaN HEMT devices
- Patent number 8,575,657
- Issue date Nov 5, 2013
- Northrop Grumman Systems Corporation
- Vincent Gambin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leakage barrier for GaN based HEMT active device
- Patent number 8,026,132
- Issue date Sep 27, 2011
- Northrop Grumman Systems Corporation
- Rajinder Randy Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for detecting and adjusting substrate height
- Patent number 7,800,766
- Issue date Sep 21, 2010
- Northrop Grumman Space & Mission Systems Corp.
- Carol Osaka Namba
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Club extension to a T-gate high electron mobility transistor
- Patent number 7,608,865
- Issue date Oct 27, 2009
- Northrop Grumman Space & Mission Systems Corp.
- Carol Osaka Namba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hard substrate wafer sawing process
- Patent number 7,041,579
- Issue date May 9, 2006
- Northrop Grumman Corporation
- Michael Edward Barsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully relaxed channel HEMT device
- Patent number 6,710,379
- Issue date Mar 23, 2004
- Northrop Grumman Corporation
- Michael Wojtowicz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure having a charge injection barrier
- Patent number 6,528,829
- Issue date Mar 4, 2003
- TRW Inc.
- Augusto L. Gutierrez-Aitken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partially relaxed channel HEMT device
- Patent number 6,515,316
- Issue date Feb 4, 2003
- TRW Inc.
- Michael Wojtowicz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Precision wide band gap semiconductor etching
- Patent number 6,245,687
- Issue date Jun 12, 2001
- TRW Inc.
- Michael E. Barsky
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR

Patents Applicationslast 30 patents

Information Patent Application
ACTIVELY DEFORMABLE METAMIRROR
- Publication number 20220146816
- Publication date May 12, 2022
- Northrop Grumman Systems Corporation
- Donald Di Marzio
- G02 - OPTICS
Information Patent Application
METHOD OF FORMING A GATE CONTACT
- Publication number 20140264448
- Publication date Sep 18, 2014
- Northrop Grumman Systems Corporation
- CAROL O. NAMBA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIRECT GROWTH OF DIAMOND IN BACKSIDE VIAS FOR GAN HEMT DEVICES
- Publication number 20130248879
- Publication date Sep 26, 2013
- Northrop Grumman Systems Corporation
- Vincent Gambin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LEAKAGE BARRIER FOR GaN BASED HEMT ACTIVE DEVICE
- Publication number 20120032185
- Publication date Feb 9, 2012
- Northrop Grumman Corporation
- Rajinder Randy Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CLUB EXTENSION TO A T-GATE HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20090267115
- Publication date Oct 29, 2009
- Carol Osaka Namba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Apparatus For Detecting and Adjusting Substrate Height
- Publication number 20090078888
- Publication date Mar 26, 2009
- Northrop Grumman Space & Mission Systems Corp.
- Carol Osaka Namba
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor having passivated sidewalls
- Publication number 20080251891
- Publication date Oct 16, 2008
- Yeong-Chang Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LEAKAGE BARRIER FOR GaN BASED HEMT ACTIVE DEVICE
- Publication number 20080153215
- Publication date Jun 26, 2008
- Rajinder Randy Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Leakage barrier for GaN based HEMT active device
- Publication number 20070218611
- Publication date Sep 20, 2007
- Northrop Grumman Corporation
- Rajinder Randy Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hard substrate wafer sawing process
- Publication number 20050090076
- Publication date Apr 28, 2005
- Northrop Grumman Corporation
- Michael Edward Barsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Partially relaxed channel HEMT device
- Publication number 20030141519
- Publication date Jul 31, 2003
- TRW Inc.
- Michael Wojtowicz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN HBT superlattice base structure
- Publication number 20020149033
- Publication date Oct 17, 2002
- Michael Wojtowicz
- H01 - BASIC ELECTRIC ELEMENTS

Michael Wojtowicz

Person

Patents Grantslast 30 patents

Actively deformable metamirror

Method of forming a gate contact

Leakage barrier for GaN based HEMT active device

Leakage barrier for GaN based HEMT active device

Direct growth of diamond in backside vias for GaN HEMT devices

Leakage barrier for GaN based HEMT active device

Method and apparatus for detecting and adjusting substrate height

Club extension to a T-gate high electron mobility transistor

Hard substrate wafer sawing process

Fully relaxed channel HEMT device

Integrated circuit structure having a charge injection barrier

Partially relaxed channel HEMT device

Precision wide band gap semiconductor etching

Patents Applicationslast 30 patents

ACTIVELY DEFORMABLE METAMIRROR

METHOD OF FORMING A GATE CONTACT

DIRECT GROWTH OF DIAMOND IN BACKSIDE VIAS FOR GAN HEMT DEVICES

LEAKAGE BARRIER FOR GaN BASED HEMT ACTIVE DEVICE

CLUB EXTENSION TO A T-GATE HIGH ELECTRON MOBILITY TRANSISTOR

Method and Apparatus For Detecting and Adjusting Substrate Height

Semiconductor having passivated sidewalls

LEAKAGE BARRIER FOR GaN BASED HEMT ACTIVE DEVICE

Leakage barrier for GaN based HEMT active device

Hard substrate wafer sawing process

Partially relaxed channel HEMT device

GaN HBT superlattice base structure