Mike F. Pas

Person

Richardson, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Data structures for semiconductor die packaging
- Patent number 10,658,211
- Issue date May 19, 2020
- Texas Instruments Incorporated
- Joseph Anthony Boduch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Data structures for semiconductor die packaging
- Patent number 10,068,786
- Issue date Sep 4, 2018
- Texas Instruments Incorporated
- Joseph Anthony Boduch
- G01 - MEASURING TESTING
Information Patent Grant
Work function adjustment with the implant of lanthanides
- Patent number 8,802,519
- Issue date Aug 12, 2014
- Texas Instruments Incorporated
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration scheme for dual work function metal gates
- Patent number 8,748,246
- Issue date Jun 10, 2014
- Texas Instruments Incorporated
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamically adjustable orthotic device
- Patent number 8,749,115
- Issue date Jun 10, 2014
- Texas Instruments Incorporated
- Sylvia D. Pas
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Grant
Integration scheme for an NMOS metal gate
- Patent number 8,629,021
- Issue date Jan 14, 2014
- Texas Instruments Incorporated
- Michael Francis Pas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamically adjustable orthotic device
- Patent number 8,525,386
- Issue date Sep 3, 2013
- Texas Instruments Incorporated
- Sylvia D. Pas
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Grant
Work function adjustment with the implant of lanthanides
- Patent number 8,409,943
- Issue date Apr 2, 2013
- Texas Instruments Incorporated
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a high-k gate dielectric layer
- Patent number 8,304,333
- Issue date Nov 6, 2012
- Texas Instruments Incorporated
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sacrificial CMP etch stop layer
- Patent number 8,304,342
- Issue date Nov 6, 2012
- Texas Instruments Incorporated
- Michael Francis Pas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration scheme for an NMOS metal gate
- Patent number 8,114,728
- Issue date Feb 14, 2012
- Texas Instruments Incorporated
- Michael Francis Pas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Work function adjustment with the implant of lanthanides
- Patent number 7,858,459
- Issue date Dec 28, 2010
- Texas Instruments Incorporated
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lanthanide series metal implant to control work function of metal g...
- Patent number 7,807,522
- Issue date Oct 5, 2010
- Texas Instruments Incorporated
- Husam Alshareef
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a high-k gate dielectric layer
- Patent number 7,799,669
- Issue date Sep 21, 2010
- Texas Instruments Incorporated
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufactured by removing sidewalls during repl...
- Patent number 7,795,097
- Issue date Sep 14, 2010
- Texas Instruments Incorporated
- Michael F. Pas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming gate electrodes for integrated circuits
- Patent number 7,642,153
- Issue date Jan 5, 2010
- Texas Instruments Incorporated
- Michael F. Pas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped WGe to form dual metal gates
- Patent number 7,629,212
- Issue date Dec 8, 2009
- Texas Instruments Incorporated
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and devices employing metal layers in gates to introduce ch...
- Patent number 7,531,398
- Issue date May 12, 2009
- Texas Instruments Incorporated
- Zhibo Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of transistors with a fully silicided gate electrode an...
- Patent number 7,416,949
- Issue date Aug 26, 2008
- Texas Instruments Incorporated
- Michael Francis Pas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra fast temperature ramp up and down in a furnace using interlea...
- Patent number 6,054,684
- Issue date Apr 25, 2000
- Texas Instruments Incorporated
- Michael F. Pas
- C30 - CRYSTAL GROWTH
Information Patent Grant
De-ionized water/ozone rinse post-hydrofluoric processing for the p...
- Patent number 5,803,980
- Issue date Sep 8, 1998
- Texas Instruments Incorporated
- Michael F. Pas
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Data Structures for Semiconductor Die Packaging
- Publication number 20180350645
- Publication date Dec 6, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Joseph Anthony Boduch
- G01 - MEASURING TESTING
Information Patent Application
WORK FUNCTION ADJUSTMENT WITH THE IMPLANT OF LANTHANIDES
- Publication number 20140315377
- Publication date Oct 23, 2014
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DYNAMICALLY ADJUSTABLE ORTHOTIC DEVICE
- Publication number 20130324887
- Publication date Dec 5, 2013
- Sylvia D. Pas
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Application
WORK FUNCTION ADJUSTMENT WITH THE IMPLANT OF LANTHANIDES
- Publication number 20130224940
- Publication date Aug 29, 2013
- TEXAS INSTRUMENTS INCOPORATED
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integration Scheme for Dual Work Function Metal Gates
- Publication number 20110223754
- Publication date Sep 15, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION ADJUSTMENT WITH THE IMPLANT OF LANTHANIDES
- Publication number 20110223757
- Publication date Sep 15, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DYNAMICALLY ADJUSTABLE ORTHOTIC DEVICE
- Publication number 20110131838
- Publication date Jun 9, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Sylvia D. PAS
- B29 - WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
Information Patent Application
METHOD OF FORMING A HIGH-K GATE DIELECTRIC LAYER
- Publication number 20110006375
- Publication date Jan 13, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION SCHEME FOR AN NMOS METAL GATE
- Publication number 20100178739
- Publication date Jul 15, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Michael Francis Pas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW k1 HOLE PRINTING USING TWO INTERSECTING FEATURES
- Publication number 20100173502
- Publication date Jul 8, 2010
- Michael Francis PAS
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Semiconductor Device Manufactured by Removing Sidewalls During Repl...
- Publication number 20090127632
- Publication date May 21, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Michael F. Pas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integration Scheme for an NMOS Metal Gate
- Publication number 20090117726
- Publication date May 7, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Michael Francis Pas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING GATE ELECTRODES FOR INTEGRATED CIRCUITS
- Publication number 20090104742
- Publication date Apr 23, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Michael F. Pas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integration Scheme for Dual Work Function Metal Gates
- Publication number 20090039439
- Publication date Feb 12, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF TRANSISTORS WITH A FULLY SILICIDED GATE ELECTRODE AN...
- Publication number 20080283941
- Publication date Nov 20, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Michael Francis Pas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Doped WGe to form dual metal gates
- Publication number 20080274598
- Publication date Nov 6, 2008
- Texas Instruments Inc.
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A HIGH-K GATE DIELECTRIC LAYER
- Publication number 20080265336
- Publication date Oct 30, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION ADJUSTMENT WITH THE IMPLANT OF LANTHANIDES
- Publication number 20080261368
- Publication date Oct 23, 2008
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integration Scheme for Dual Work Function Metal Gates
- Publication number 20080237743
- Publication date Oct 2, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF TRANSISTORS WITH A FULLY SILICIDED GATE ELECTRODE AN...
- Publication number 20080191289
- Publication date Aug 14, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Michael Francis Pas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lanthanide series metal implant to control work function of metal g...
- Publication number 20080160736
- Publication date Jul 3, 2008
- Texas Instruments Inc.
- Husam Alshareef
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sacrificial CMP etch stop layer
- Publication number 20080102634
- Publication date May 1, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Michael Francis Pas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods and devices employing metal layers in gates to introduce ch...
- Publication number 20080096338
- Publication date Apr 24, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Zhibo Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductive device fabricated using a two step approach to silic...
- Publication number 20070178683
- Publication date Aug 2, 2007
- Texas Instruments, Incorporated
- Manfred B. Ramin
- H01 - BASIC ELECTRIC ELEMENTS

Mike F. Pas

Person

Patents Grantslast 30 patents

Data structures for semiconductor die packaging

Data structures for semiconductor die packaging

Work function adjustment with the implant of lanthanides

Integration scheme for dual work function metal gates

Dynamically adjustable orthotic device

Integration scheme for an NMOS metal gate

Dynamically adjustable orthotic device

Work function adjustment with the implant of lanthanides

Method of forming a high-k gate dielectric layer

Sacrificial CMP etch stop layer

Integration scheme for an NMOS metal gate

Work function adjustment with the implant of lanthanides

Lanthanide series metal implant to control work function of metal g...

Method of forming a high-k gate dielectric layer

Semiconductor device manufactured by removing sidewalls during repl...

Methods for forming gate electrodes for integrated circuits

Doped WGe to form dual metal gates

Methods and devices employing metal layers in gates to introduce ch...

Fabrication of transistors with a fully silicided gate electrode an...

Ultra fast temperature ramp up and down in a furnace using interlea...

De-ionized water/ozone rinse post-hydrofluoric processing for the p...

Patents Applicationslast 30 patents

Data Structures for Semiconductor Die Packaging

WORK FUNCTION ADJUSTMENT WITH THE IMPLANT OF LANTHANIDES

DYNAMICALLY ADJUSTABLE ORTHOTIC DEVICE

WORK FUNCTION ADJUSTMENT WITH THE IMPLANT OF LANTHANIDES

Integration Scheme for Dual Work Function Metal Gates

WORK FUNCTION ADJUSTMENT WITH THE IMPLANT OF LANTHANIDES

DYNAMICALLY ADJUSTABLE ORTHOTIC DEVICE

METHOD OF FORMING A HIGH-K GATE DIELECTRIC LAYER

INTEGRATION SCHEME FOR AN NMOS METAL GATE

LOW k1 HOLE PRINTING USING TWO INTERSECTING FEATURES

Semiconductor Device Manufactured by Removing Sidewalls During Repl...

Integration Scheme for an NMOS Metal Gate

METHODS FOR FORMING GATE ELECTRODES FOR INTEGRATED CIRCUITS

Integration Scheme for Dual Work Function Metal Gates

FABRICATION OF TRANSISTORS WITH A FULLY SILICIDED GATE ELECTRODE AN...

Doped WGe to form dual metal gates

METHOD OF FORMING A HIGH-K GATE DIELECTRIC LAYER

WORK FUNCTION ADJUSTMENT WITH THE IMPLANT OF LANTHANIDES

Integration Scheme for Dual Work Function Metal Gates

FABRICATION OF TRANSISTORS WITH A FULLY SILICIDED GATE ELECTRODE AN...

Lanthanide series metal implant to control work function of metal g...

Sacrificial CMP etch stop layer

Methods and devices employing metal layers in gates to introduce ch...

Semiconductive device fabricated using a two step approach to silic...