Min DAI

Person

Allendale, NJ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Hydroxyl group termination for nucleation of a dielectric metallic...
- Patent number 9,831,084
- Issue date Nov 28, 2017
- International Business Machines Corporation
- Takashi Ando
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Field effect transistors having multiple effective work functions
- Patent number 9,691,662
- Issue date Jun 27, 2017
- GLOBALFOUNDRIES Inc.
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of higher-K dielectrics
- Patent number 9,673,108
- Issue date Jun 6, 2017
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors having multiple effective work functions
- Patent number 9,484,427
- Issue date Nov 1, 2016
- GLOBALFOUNDRIES Inc.
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of higher-k dielectrics
- Patent number 9,478,425
- Issue date Oct 25, 2016
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hydroxyl group termination for nucleation of a dielectric metallic...
- Patent number 9,373,501
- Issue date Jun 21, 2016
- International Business Machines Corporation
- Takashi Ando
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device including graded gate stack, related method an...
- Patent number 9,257,519
- Issue date Feb 9, 2016
- GLOBALFOUNDRIES, INC.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing scaled equivalent oxide thickness gate stac...
- Patent number 9,099,461
- Issue date Aug 4, 2015
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic peak tracking in X-ray photoelectron spectroscopy measureme...
- Patent number 9,080,948
- Issue date Jul 14, 2015
- International Business Machines Corporation
- Bing Sun
- G01 - MEASURING TESTING
Information Patent Grant
Concurrently forming nFET and pFET gate dielectric layers
- Patent number 9,059,315
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite high-k gate dielectric stack for reducing gate leakage
- Patent number 9,029,959
- Issue date May 12, 2015
- International Business Machines Corporation
- MaryJane Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium oxide free atomic layer deposition of silicon oxide and h...
- Patent number 8,952,460
- Issue date Feb 10, 2015
- International Business Machines Corporation
- MaryJane Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to form input/output devices
- Patent number 8,836,037
- Issue date Sep 16, 2014
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor devices including replacement...
- Patent number 8,835,292
- Issue date Sep 16, 2014
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with reduced parasitic capacitance
- Patent number 8,809,962
- Issue date Aug 19, 2014
- GLOBALFOUNDRIES Inc.
- Yanxiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium oxide free atomic layer deposition of silicon oxide and h...
- Patent number 8,809,152
- Issue date Aug 19, 2014
- International Business Machines Corporation
- MaryJane Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device devoid of an interfacial layer and methods of...
- Patent number 8,735,244
- Issue date May 27, 2014
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming N-shaped bottom stress liner
- Patent number 8,669,616
- Issue date Mar 11, 2014
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xiaodong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming N-shaped bottom stress liner
- Patent number 8,557,668
- Issue date Oct 15, 2013
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xiaodong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of silicon oxide and oxynitride having sub-nanometer th...
- Patent number 8,492,290
- Issue date Jul 23, 2013
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS OF BANDGAP ANALYSIS AND MODELING FOR HIGH K METAL GATE
- Publication number 20190242938
- Publication date Aug 8, 2019
- GLOBALFOUNDRIES INC.
- Min DAI
- G01 - MEASURING TESTING
Information Patent Application
FABRICATION OF HIGHER-K DIELECTRICS
- Publication number 20170170077
- Publication date Jun 15, 2017
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS HAVING MULTIPLE EFFECTIVE WORK FUNCTIONS
- Publication number 20170047255
- Publication date Feb 16, 2017
- GLOBALFOUNDRIES INC.
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYDROXYL GROUP TERMINATION FOR NUCLEATION OF A DIELECTRIC METALLIC...
- Publication number 20160027640
- Publication date Jan 28, 2016
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS HAVING MULTIPLE EFFECTIVE WORK FUNCTIONS
- Publication number 20160005831
- Publication date Jan 7, 2016
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYDROXYL GROUP TERMINATION FOR NUCLEATION OF A DIELECTRIC METALLIC...
- Publication number 20140308821
- Publication date Oct 16, 2014
- International Business Machines Corporation
- Takashi Ando
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
DYNAMIC PEAK TRACKING IN X-RAY PHOTOELECTRON SPECTROSCOPY MEASUREME...
- Publication number 20140264015
- Publication date Sep 18, 2014
- International Business Machines Corporation
- Bing Sun
- G01 - MEASURING TESTING
Information Patent Application
Concurrently Forming nFET and pFET Gate Dielectric Layers
- Publication number 20140187028
- Publication date Jul 3, 2014
- GLOBALFOUNDRIES INC.
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPOSITION OF PURE METALS IN 3D STRUCTURES
- Publication number 20140183051
- Publication date Jul 3, 2014
- International Business Machines Corporation
- Michael P. Chudzik
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES INCLUDING REPLACEMENT...
- Publication number 20140120708
- Publication date May 1, 2014
- GLOBALFOUNDRIES INC.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING GRADED GATE STACK, RELATED METHOD AN...
- Publication number 20140070334
- Publication date Mar 13, 2014
- GLOBALFOUNDRIES
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GERMANIUM OXIDE FREE ATOMIC LAYER DEPOSITION OF SILICON OXIDE AND H...
- Publication number 20140061819
- Publication date Mar 6, 2014
- International Business Machines Corporation
- MaryJane Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO FORM INPUT/OUTPUT DEVICES
- Publication number 20140042546
- Publication date Feb 13, 2014
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING N-SHAPED BOTTOM STRESS LINER
- Publication number 20140015020
- Publication date Jan 16, 2014
- Xiaodong YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE HIGH-K GATE DIELECTRIC STACK FOR REDUCING GATE LEAKAGE
- Publication number 20140001570
- Publication date Jan 2, 2014
- GLOBALFOUNDRIES INC.
- MaryJane Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SCALED EQUIVALENT OXIDE THICKNESS GATE STAC...
- Publication number 20130330843
- Publication date Dec 12, 2013
- GLOBALFOUNDRIES INC.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING GRADED GATE STACK, RELATED METHOD AN...
- Publication number 20130277765
- Publication date Oct 24, 2013
- GLOBALFOUNDRIES INC.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING N-SHAPED BOTTOM STRESS LINER
- Publication number 20130181260
- Publication date Jul 18, 2013
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xiaodong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GERMANIUM OXIDE FREE ATOMIC LAYER DEPOSITION OF SILICON OXIDE AND H...
- Publication number 20130126986
- Publication date May 23, 2013
- International Business Machines Corporation
- MaryJane Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING N-TYPE AND P-TYPE METAL-OXIDE-SEMICONDUCTOR GATE...
- Publication number 20130082332
- Publication date Apr 4, 2013
- Samsung Electronics Co., Ltd.
- Jinping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH REDUCED PARASITIC CAPACITANCE
- Publication number 20130049142
- Publication date Feb 28, 2013
- International Business Machines Corporation
- Yanxiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF SILICON OXIDE AND OXYNITRIDE HAVING SUB-NANOMETER TH...
- Publication number 20120329230
- Publication date Dec 27, 2012
- GLOBALFOUNDRIES INC.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE DEVOID OF AN INTERFACIAL LAYER AND METHODS OF...
- Publication number 20120280370
- Publication date Nov 8, 2012
- International Business Machines Corporation
- Michael P. CHUDZIK
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Hydroxyl group termination for nucleation of a dielectric metallic...

Field effect transistors having multiple effective work functions

Fabrication of higher-K dielectrics

Field effect transistors having multiple effective work functions

Fabrication of higher-k dielectrics

Hydroxyl group termination for nucleation of a dielectric metallic...

Semiconductor device including graded gate stack, related method an...

Method of manufacturing scaled equivalent oxide thickness gate stac...

Dynamic peak tracking in X-ray photoelectron spectroscopy measureme...

Concurrently forming nFET and pFET gate dielectric layers

Composite high-k gate dielectric stack for reducing gate leakage

Germanium oxide free atomic layer deposition of silicon oxide and h...

Structure and method to form input/output devices

Method of manufacturing semiconductor devices including replacement...

Transistor with reduced parasitic capacitance

Germanium oxide free atomic layer deposition of silicon oxide and h...

Semiconductor device devoid of an interfacial layer and methods of...

Method for forming N-shaped bottom stress liner

Method for forming N-shaped bottom stress liner

Fabrication of silicon oxide and oxynitride having sub-nanometer th...

Patents Applicationslast 30 patents

METHODS OF BANDGAP ANALYSIS AND MODELING FOR HIGH K METAL GATE

FABRICATION OF HIGHER-K DIELECTRICS

FIELD EFFECT TRANSISTORS HAVING MULTIPLE EFFECTIVE WORK FUNCTIONS

HYDROXYL GROUP TERMINATION FOR NUCLEATION OF A DIELECTRIC METALLIC...

FIELD EFFECT TRANSISTORS HAVING MULTIPLE EFFECTIVE WORK FUNCTIONS

HYDROXYL GROUP TERMINATION FOR NUCLEATION OF A DIELECTRIC METALLIC...

DYNAMIC PEAK TRACKING IN X-RAY PHOTOELECTRON SPECTROSCOPY MEASUREME...

Concurrently Forming nFET and pFET Gate Dielectric Layers

DEPOSITION OF PURE METALS IN 3D STRUCTURES

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES INCLUDING REPLACEMENT...

SEMICONDUCTOR DEVICE INCLUDING GRADED GATE STACK, RELATED METHOD AN...

GERMANIUM OXIDE FREE ATOMIC LAYER DEPOSITION OF SILICON OXIDE AND H...

STRUCTURE AND METHOD TO FORM INPUT/OUTPUT DEVICES

METHOD FOR FORMING N-SHAPED BOTTOM STRESS LINER

COMPOSITE HIGH-K GATE DIELECTRIC STACK FOR REDUCING GATE LEAKAGE

METHOD OF MANUFACTURING SCALED EQUIVALENT OXIDE THICKNESS GATE STAC...

SEMICONDUCTOR DEVICE INCLUDING GRADED GATE STACK, RELATED METHOD AN...

METHOD FOR FORMING N-SHAPED BOTTOM STRESS LINER

GERMANIUM OXIDE FREE ATOMIC LAYER DEPOSITION OF SILICON OXIDE AND H...

METHOD FOR FORMING N-TYPE AND P-TYPE METAL-OXIDE-SEMICONDUCTOR GATE...

TRANSISTOR WITH REDUCED PARASITIC CAPACITANCE

FABRICATION OF SILICON OXIDE AND OXYNITRIDE HAVING SUB-NANOMETER TH...

SEMICONDUCTOR DEVICE DEVOID OF AN INTERFACIAL LAYER AND METHODS OF...