Min Gyu Sung

Person

Latham, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Ferroelectric random-access memory cell
- Patent number 12,150,310
- Issue date Nov 19, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable resistive random access memory cell
- Patent number 12,004,435
- Issue date Jun 4, 2024
- International Business Machines Corporation
- Min Gyu Sung
Information Patent Grant
RRAM with high work function cap
- Patent number 12,004,436
- Issue date Jun 4, 2024
- International Business Machines Corporation
- Soon-Cheon Seo
Information Patent Grant
DRAM memory device having angled structures with sidewalls extendin...
- Patent number 11,569,242
- Issue date Jan 31, 2023
- Applied Materials, Inc.
- Sony Varghese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming semiconductor device having uniform fin pitch
- Patent number 11,456,179
- Issue date Sep 27, 2022
- Applied Materials, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus, and manufacturing system for self-aligned patte...
- Patent number 11,309,220
- Issue date Apr 19, 2022
- GLOBALFOUNDRIES Inc.
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement gate formation with angled etch and deposition
- Patent number 11,217,491
- Issue date Jan 4, 2022
- Varian Semiconductor Equipment Associates, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric fin trimming for fins of FinFET device
- Patent number 11,205,593
- Issue date Dec 21, 2021
- Applied Materials, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate spacer formation for scaled CMOS devices
- Patent number 11,101,183
- Issue date Aug 24, 2021
- Varian Semiconductor Equipment Associates, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of device regions
- Patent number 11,037,788
- Issue date Jun 15, 2021
- Applied Materials, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming dynamic random-access devices by implanting a d...
- Patent number 11,018,138
- Issue date May 25, 2021
- Applied Materials, Inc.
- Sony Varghese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method of forming fin device having improved fin liner
- Patent number 10,971,403
- Issue date Apr 6, 2021
- Varian Semiconductor Equipment Associates, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate all around device and method of formation using angled ions
- Patent number 10,930,735
- Issue date Feb 23, 2021
- Applied Materials, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air-gap spacers for field-effect transistors
- Patent number 10,923,389
- Issue date Feb 16, 2021
- GLOBALFOUNDRIES U.S. INC.
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate devices and methods of formation using angled ions
- Patent number 10,903,211
- Issue date Jan 26, 2021
- Applied Materials, Inc.
- Anthony Renau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Titanium silicide formation in a narrow source-drain contact
- Patent number 10,854,510
- Issue date Dec 1, 2020
- GLOBALFOUNDRIES Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Increased isolation of diffusion breaks in FinFET devices using an...
- Patent number 10,811,304
- Issue date Oct 20, 2020
- Varian Semiconductor Equipment Associates, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for forming dual epitaxial source/drain semiconductor de...
- Patent number 10,804,156
- Issue date Oct 13, 2020
- Varian Semiconductor Equipment Associates, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
finFET with improved nitride to fin spacing
- Patent number 10,790,395
- Issue date Sep 29, 2020
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device isolation structure in finFET
- Patent number 10,755,965
- Issue date Aug 25, 2020
- Varian Semiconductor Equipment Associates, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming transistor device having fin cut regions
- Patent number 10,720,357
- Issue date Jul 21, 2020
- Varian Semiconductor Equipment Associates, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin damage reduction during punch through implantation of FinFET de...
- Patent number 10,692,775
- Issue date Jun 23, 2020
- Applied Materials, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin damage reduction during punch through implantation of FinFET de...
- Patent number 10,686,033
- Issue date Jun 16, 2020
- Applied Materials, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for power rail in a fin type field effect transistor
- Patent number 10,685,865
- Issue date Jun 16, 2020
- Varian Semiconductor Equipment Associates, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for contact formation in self-aligned replacement gate d...
- Patent number 10,644,117
- Issue date May 5, 2020
- Varian Semiconductor Equipment Associates, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for shallow trench isolation in a fin type field...
- Patent number 10,629,741
- Issue date Apr 21, 2020
- Applied Materials, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques and structure for forming dynamic random-access device u...
- Patent number 10,629,437
- Issue date Apr 21, 2020
- Varian Semiconductor Equipment Associates, Inc.
- Sony Varghese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate all around device and method of formation using angled ions
- Patent number 10,607,847
- Issue date Mar 31, 2020
- Applied Materials, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of device regions
- Patent number 10,580,651
- Issue date Mar 3, 2020
- Applied Materials, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device isolation structure in finFET
- Patent number 10,546,770
- Issue date Jan 28, 2020
- Varian Semiconductor Equipment Associates, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STACKED TWO-TRANSISTOR DYNAMIC RANDOM ACCESS MEMORY CELL
- Publication number 20240405071
- Publication date Dec 5, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING BACKSIDE SIGNAL WIRING AND FRONTSIDE...
- Publication number 20240404950
- Publication date Dec 5, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED HYBRID TFET AND MOSFET
- Publication number 20240395814
- Publication date Nov 28, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALED 2T DRAM
- Publication number 20240386943
- Publication date Nov 21, 2024
- International Business Machines Corporation
- Min Gyu Sung
- G11 - INFORMATION STORAGE
Information Patent Application
NANOWIRE FLASH MEMORY WITH SEPARATED SOURCE/DRAIN REGIONS
- Publication number 20240357822
- Publication date Oct 24, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACT WITH CT CUT AFTER RMG
- Publication number 20240347533
- Publication date Oct 17, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED ELECTRONIC DEVICES HAVING INDEPENDENT GATES
- Publication number 20240332082
- Publication date Oct 3, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFERENT WORK FUNCTION METALS
- Publication number 20240321882
- Publication date Sep 26, 2024
- International Business Machines Corporation
- Soon-Cheon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED RESISTIVE RANDOM-ACCESS MEMORY CROSS-POINT CELL
- Publication number 20240324476
- Publication date Sep 26, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT CUT AND WRAP AROUND CONTACT
- Publication number 20240321645
- Publication date Sep 26, 2024
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE OF ACCURATELY CONTROLLING CONTACT GOUGING POSI...
- Publication number 20240313070
- Publication date Sep 19, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY STRUCTURES HAVING A SINGLE ACCESS TRANSISTOR FOR MULTIPLE ME...
- Publication number 20240284687
- Publication date Aug 22, 2024
- International Business Machines Corporation
- Min Gyu Sung
Information Patent Application
FERROELECTRIC-RAM WITH INTEGRATED DOMAIN REVERSAL CATALYST
- Publication number 20240224539
- Publication date Jul 4, 2024
- International Business Machines Corporation
- Julien Frougier
- G11 - INFORMATION STORAGE
Information Patent Application
BACKSIDE CONTACTS FOR STACKED FIELD EFFECT TRANSISTORS
- Publication number 20240222227
- Publication date Jul 4, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTORS HAVING SELF ALIGNED BACKSIDE CONTACT WITH BACKS...
- Publication number 20240213248
- Publication date Jun 27, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-TRANSISTOR CHIP AND THREE-TRANSISTOR CHIP IDENTIFICATION BIT CELLS
- Publication number 20240202305
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Kangguo Cheng
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
STACKED CMOS DEVICES WITH TWO DIELECTRIC MATERIALS IN A GATE CUT
- Publication number 20240203990
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE TIE-DOWN FOR TOP FIELD EFFECT TRANSISTOR
- Publication number 20240203992
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-RESISTANCE VIA TO BACKSIDE POWER RAIL
- Publication number 20240203879
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO FORM VIA TO BACKSIDE POWER RAIL WITHOUT SHO...
- Publication number 20240204008
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED ReRAM WITH BACKSIDE CONTACT
- Publication number 20240196627
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PREVENTING SOURCE/DRAIN EPI MERGE WITHOUT CELL SIZE INCREASE
- Publication number 20240194677
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VIA AND SOURCE/DRAIN CONTACT LANDING UNDER POWER RAIL
- Publication number 20240186387
- Publication date Jun 6, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE WITH FRONTSIDE AND BACKSIDE DRAMS
- Publication number 20240188282
- Publication date Jun 6, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL RERAM DEVICE
- Publication number 20240179924
- Publication date May 30, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL INTERCONNECT FORMATION AT DOUBLE DIFFUSION BREAK
- Publication number 20240178136
- Publication date May 30, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPPORT DIELECTRIC FIN TO PREVENT GATE FLOP-OVER IN NANOSHEET TRANS...
- Publication number 20240178156
- Publication date May 30, 2024
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT ARCHITECTURE USING TRANSISTORS WITH DYNAMIC DUAL FUNCTIONAL...
- Publication number 20240172454
- Publication date May 23, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH STRAINED NANOSHEET CHANNEL
- Publication number 20240170538
- Publication date May 23, 2024
- International Business Machines Corporation
- Liqiao Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN CONTACT
- Publication number 20240153990
- Publication date May 9, 2024
- International Business Machines Corporation
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS

Min Gyu Sung

Person

Patents Grantslast 30 patents

Ferroelectric random-access memory cell

Tunable resistive random access memory cell

RRAM with high work function cap

DRAM memory device having angled structures with sidewalls extendin...

Methods for forming semiconductor device having uniform fin pitch

Methods, apparatus, and manufacturing system for self-aligned patte...

Replacement gate formation with angled etch and deposition

Asymmetric fin trimming for fins of FinFET device

Gate spacer formation for scaled CMOS devices

Integration of device regions

Methods for forming dynamic random-access devices by implanting a d...

Structure and method of forming fin device having improved fin liner

Gate all around device and method of formation using angled ions

Air-gap spacers for field-effect transistors

Gate devices and methods of formation using angled ions

Titanium silicide formation in a narrow source-drain contact

Increased isolation of diffusion breaks in FinFET devices using an...

Techniques for forming dual epitaxial source/drain semiconductor de...

finFET with improved nitride to fin spacing

Method and device isolation structure in finFET

Method of forming transistor device having fin cut regions

Fin damage reduction during punch through implantation of FinFET de...

Fin damage reduction during punch through implantation of FinFET de...

Method and device for power rail in a fin type field effect transistor

Techniques for contact formation in self-aligned replacement gate d...

Method and device for shallow trench isolation in a fin type field...

Techniques and structure for forming dynamic random-access device u...

Gate all around device and method of formation using angled ions

Integration of device regions

Method and device isolation structure in finFET

Patents Applicationslast 30 patents

STACKED TWO-TRANSISTOR DYNAMIC RANDOM ACCESS MEMORY CELL

SEMICONDUCTOR DEVICE INCLUDING BACKSIDE SIGNAL WIRING AND FRONTSIDE...

STACKED HYBRID TFET AND MOSFET

SCALED 2T DRAM

NANOWIRE FLASH MEMORY WITH SEPARATED SOURCE/DRAIN REGIONS

SELF-ALIGNED CONTACT WITH CT CUT AFTER RMG

STACKED ELECTRONIC DEVICES HAVING INDEPENDENT GATES

DIFFERENT WORK FUNCTION METALS

STACKED RESISTIVE RANDOM-ACCESS MEMORY CROSS-POINT CELL

CONTACT CUT AND WRAP AROUND CONTACT

METHOD AND STRUCTURE OF ACCURATELY CONTROLLING CONTACT GOUGING POSI...

MEMORY STRUCTURES HAVING A SINGLE ACCESS TRANSISTOR FOR MULTIPLE ME...

FERROELECTRIC-RAM WITH INTEGRATED DOMAIN REVERSAL CATALYST

BACKSIDE CONTACTS FOR STACKED FIELD EFFECT TRANSISTORS

STACKED TRANSISTORS HAVING SELF ALIGNED BACKSIDE CONTACT WITH BACKS...

TWO-TRANSISTOR CHIP AND THREE-TRANSISTOR CHIP IDENTIFICATION BIT CELLS

STACKED CMOS DEVICES WITH TWO DIELECTRIC MATERIALS IN A GATE CUT

GATE TIE-DOWN FOR TOP FIELD EFFECT TRANSISTOR

LOW-RESISTANCE VIA TO BACKSIDE POWER RAIL

STRUCTURE AND METHOD TO FORM VIA TO BACKSIDE POWER RAIL WITHOUT SHO...

EMBEDDED ReRAM WITH BACKSIDE CONTACT

PREVENTING SOURCE/DRAIN EPI MERGE WITHOUT CELL SIZE INCREASE

VIA AND SOURCE/DRAIN CONTACT LANDING UNDER POWER RAIL

STRUCTURE WITH FRONTSIDE AND BACKSIDE DRAMS

THREE DIMENSIONAL RERAM DEVICE

LOCAL INTERCONNECT FORMATION AT DOUBLE DIFFUSION BREAK

SUPPORT DIELECTRIC FIN TO PREVENT GATE FLOP-OVER IN NANOSHEET TRANS...

CIRCUIT ARCHITECTURE USING TRANSISTORS WITH DYNAMIC DUAL FUNCTIONAL...

SEMICONDUCTOR STRUCTURE WITH STRAINED NANOSHEET CHANNEL

FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN CONTACT