Min-Hwa CHI

Person

Qingdao, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Notch shape of trench gate bottom corner for better breakdown volta...
- Patent number 12,183,795
- Issue date Dec 31, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Conghui Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction power device and method of making the same
- Patent number 12,154,943
- Issue date Nov 26, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction power device
- Patent number 12,154,944
- Issue date Nov 26, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage semiconductor device comprising a combined junction te...
- Patent number 12,148,793
- Issue date Nov 19, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction power device and method of making the same
- Patent number 12,136,647
- Issue date Nov 5, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form contacts with multiple depth by enhanced CESL
- Patent number 12,131,946
- Issue date Oct 29, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiGe HBT with graphene extrinsic base and methods
- Patent number 12,094,873
- Issue date Sep 17, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method of new power MOS and IGBT with built-in multip...
- Patent number 11,984,500
- Issue date May 14, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa Chi
- G11 - INFORMATION STORAGE
Information Patent Grant
Simultaneous self-forming hea barrier and Cu seeding layers for Cu...
- Patent number 11,978,702
- Issue date May 7, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Yong Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage semiconductor device comprising a combined junction te...
- Patent number 11,862,674
- Issue date Jan 2, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ALD method with multi-chambers for sic or multi-elements epitaxial...
- Patent number 11,834,754
- Issue date Dec 5, 2023
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Zhaosheng Meng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Super junction power device and method of making the same
- Patent number 11,715,758
- Issue date Aug 1, 2023
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT device with narrow mesa and manufacture thereof
- Patent number 11,677,019
- Issue date Jun 13, 2023
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS transistor and manufacture thereof
- Patent number 11,594,631
- Issue date Feb 28, 2023
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS transistor having vertical floating field plate and manufactu...
- Patent number 11,462,640
- Issue date Oct 4, 2022
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate structure and method of forming a trench gate structure
- Patent number 11,456,367
- Issue date Sep 27, 2022
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH VOLTAGE SEMICONDUCTOR DEVICE COMPRISING A COMBINED JUNCTION TE...
- Publication number 20240088216
- Publication date Mar 14, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa CHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER JUNCTION POWER DEVICE
- Publication number 20230326962
- Publication date Oct 12, 2023
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa CHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOTCH SHAPE OF TRENCH GATE BOTTOM CORNOR FOR BETTER BREAKDOWN VOLTA...
- Publication number 20220320303
- Publication date Oct 6, 2022
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Conghui LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIMULTANEOUS SELF-FORMING HEA BARRIER AND CU SEEDING LAYERS FOR CU...
- Publication number 20220319999
- Publication date Oct 6, 2022
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Yong ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ALIGNMENT SCHEME OF MASK TO ZERO LAYER MARK UNDERNEATH EPI LAYER AN...
- Publication number 20220320003
- Publication date Oct 6, 2022
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa CHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEW METHOD TO FORM CONTACTS WITH MULTIPLE DEPTH BY ENHANCED CESL
- Publication number 20220246470
- Publication date Aug 4, 2022
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa CHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEW ALD METHOD WITH MULTI-CHAMBERS FOR SIC OR MULTI-ELEMENTS EPITAX...
- Publication number 20220243359
- Publication date Aug 4, 2022
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Zhaosheng MENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LINER AND BARRIER LAYER IN DUAL DAMASCENE CU INTERCONNECT FOR ENHAN...
- Publication number 20220216101
- Publication date Jul 7, 2022
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Zhaosheng MENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD OF NEW POWER MOS AND IGBT WITH BUILT-IN MULTIP...
- Publication number 20220209005
- Publication date Jun 30, 2022
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa CHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIGE HBT WITH GRENPHENE EXTRINSIC BASE AND METHODS
- Publication number 20220208756
- Publication date Jun 30, 2022
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa CHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-BITS STORAGE IN POWER MOS (AND IGBT) AND SIMULTANEOUS READ ME...
- Publication number 20220208765
- Publication date Jun 30, 2022
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa CHI
- G11 - INFORMATION STORAGE
Information Patent Application
LDMOS transistor having vertical floating field plate and manufactu...
- Publication number 20220102551
- Publication date Mar 31, 2022
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa CHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR AND METHOD OF MAKING THE SAME
- Publication number 20220093774
- Publication date Mar 24, 2022
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa CHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PRESSURE DEVICE OF RESURF CONTAINING FERROELECTRIC MATERIAL AN...
- Publication number 20210399086
- Publication date Dec 23, 2021
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa CHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS TRANSISTOR AND MANUFACTURE THEREOF
- Publication number 20210399129
- Publication date Dec 23, 2021
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER JUNCTION POWER DEVICE AND METHOD OF MAKING THE SAME
- Publication number 20210391416
- Publication date Dec 16, 2021
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa CHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT DEVICE WITH NARROW MESA AND MANUFACTURE THEREOF
- Publication number 20210391453
- Publication date Dec 16, 2021
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa CHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER JUNCTION POWER DEVICE AND METHOD OF MAKING THE SAME
- Publication number 20210391417
- Publication date Dec 16, 2021
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa CHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER JUNCTION POWER DEVICE AND METHOD OF MAKING THE SAME
- Publication number 20210391419
- Publication date Dec 16, 2021
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa CHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER JUNCTION POWER DEVICE AND METHOD OF MAKING THE SAME
- Publication number 20210391418
- Publication date Dec 16, 2021
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa CHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH GATE STRUCTURE AND METHOD OF FORMING A TRENCH GATE STRUCTURE
- Publication number 20210343850
- Publication date Nov 4, 2021
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa CHI
- H01 - BASIC ELECTRIC ELEMENTS

Min-Hwa CHI

Person

Patents Grantslast 30 patents

Notch shape of trench gate bottom corner for better breakdown volta...

Super junction power device and method of making the same

Super junction power device

High voltage semiconductor device comprising a combined junction te...

Super junction power device and method of making the same

Method to form contacts with multiple depth by enhanced CESL

SiGe HBT with graphene extrinsic base and methods

Structure and method of new power MOS and IGBT with built-in multip...

Simultaneous self-forming hea barrier and Cu seeding layers for Cu...

High voltage semiconductor device comprising a combined junction te...

ALD method with multi-chambers for sic or multi-elements epitaxial...

Super junction power device and method of making the same

IGBT device with narrow mesa and manufacture thereof

LDMOS transistor and manufacture thereof

LDMOS transistor having vertical floating field plate and manufactu...

Trench gate structure and method of forming a trench gate structure

Patents Applicationslast 30 patents

HIGH VOLTAGE SEMICONDUCTOR DEVICE COMPRISING A COMBINED JUNCTION TE...

SUPER JUNCTION POWER DEVICE

NOTCH SHAPE OF TRENCH GATE BOTTOM CORNOR FOR BETTER BREAKDOWN VOLTA...

SIMULTANEOUS SELF-FORMING HEA BARRIER AND CU SEEDING LAYERS FOR CU...

ALIGNMENT SCHEME OF MASK TO ZERO LAYER MARK UNDERNEATH EPI LAYER AN...

NEW METHOD TO FORM CONTACTS WITH MULTIPLE DEPTH BY ENHANCED CESL

NEW ALD METHOD WITH MULTI-CHAMBERS FOR SIC OR MULTI-ELEMENTS EPITAX...

LINER AND BARRIER LAYER IN DUAL DAMASCENE CU INTERCONNECT FOR ENHAN...

STRUCTURE AND METHOD OF NEW POWER MOS AND IGBT WITH BUILT-IN MULTIP...

SIGE HBT WITH GRENPHENE EXTRINSIC BASE AND METHODS

MULTI-BITS STORAGE IN POWER MOS (AND IGBT) AND SIMULTANEOUS READ ME...

LDMOS transistor having vertical floating field plate and manufactu...

HETEROJUNCTION BIPOLAR TRANSISTOR AND METHOD OF MAKING THE SAME

HIGH PRESSURE DEVICE OF RESURF CONTAINING FERROELECTRIC MATERIAL AN...

LDMOS TRANSISTOR AND MANUFACTURE THEREOF

SUPER JUNCTION POWER DEVICE AND METHOD OF MAKING THE SAME

IGBT DEVICE WITH NARROW MESA AND MANUFACTURE THEREOF

SUPER JUNCTION POWER DEVICE AND METHOD OF MAKING THE SAME

SUPER JUNCTION POWER DEVICE AND METHOD OF MAKING THE SAME

SUPER JUNCTION POWER DEVICE AND METHOD OF MAKING THE SAME

TRENCH GATE STRUCTURE AND METHOD OF FORMING A TRENCH GATE STRUCTURE