Min-Hwa Chi

Person

Palo Alto, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Quasi-plannar and FinFET-like transistors on bulk silicon
- Patent number 7,564,105
- Issue date Jul 21, 2009
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amorphous carbon contact film for contact hole etch process
- Patent number 7,371,634
- Issue date May 13, 2008
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wen-Chuan Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming dual damascene with improved etch profiles
- Patent number 7,291,553
- Issue date Nov 6, 2007
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Ku Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming polysilicon gate structures with specific edge pr...
- Patent number 7,129,140
- Issue date Oct 31, 2006
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Ku Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single poly EPROM cell having smaller size and improved data retent...
- Patent number 6,905,929
- Issue date Jun 14, 2005
- National Semiconductor Corporation
- Richard B. Merrill
- G11 - INFORMATION STORAGE
Information Patent Grant
Single poly EPROM cell having smaller size and improved data retent...
- Patent number 6,509,606
- Issue date Jan 21, 2003
- National Semiconductor Corporation
- Richard B. Merrill
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for forming a bipolar-based active pixel sensor cell with po...
- Patent number 6,136,635
- Issue date Oct 24, 2000
- Foveonics, Inc.
- Albert Bergemont
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitive coupled bipolar active pixel imager having overflow prot...
- Patent number 6,088,058
- Issue date Jul 11, 2000
- Foveon, Inc.
- Carver A. Mead
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Method for forming a bipolar-based active pixel sensor cell with me...
- Patent number 6,080,601
- Issue date Jun 27, 2000
- National Semiconductor Corporation
- Albert Bergemont
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Neural network active pixel cell
- Patent number 6,011,295
- Issue date Jan 4, 2000
- Foveonics, Inc.
- Richard Billings Merrill
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
ESD Input protection using a floating gate neuron MOSFET as a tunab...
- Patent number 6,008,508
- Issue date Dec 28, 1999
- National Semiconductor Corporation
- Albert Bergemont
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Active pixel image cell with embedded memory and pixel level signal...
- Patent number 5,962,844
- Issue date Oct 5, 1999
- Foveon, Inc.
- Richard Billings Merrill
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Color active pixel sensor cell with oxide color filter
- Patent number 5,945,722
- Issue date Aug 31, 1999
- National Semiconductor Corporation
- Gu-Fung David Tsuei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-poly EEPROM cell that is programmable and erasable in a low-...
- Patent number 5,940,324
- Issue date Aug 17, 1999
- National Semiconductor Corporation
- Min-Hwa Chi
- G11 - INFORMATION STORAGE
Information Patent Grant
Capacitor-coupled bipolar active pixel sensor with integrated elect...
- Patent number 5,932,873
- Issue date Aug 3, 1999
- Foveon, Inc.
- Albert Bergemont
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a mixed-signal CMOS circuit that includes non-vo...
- Patent number 5,908,311
- Issue date Jun 1, 1999
- National Semiconductor Corporation
- Min-hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density EEPROM array using self-aligned control gate and float...
- Patent number 5,889,700
- Issue date Mar 30, 1999
- National Semiconductor Corporation
- Albert Bergemont
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a high density EEPROM cell
- Patent number 5,856,222
- Issue date Jan 5, 1999
- National Semiconductor Corp.
- Albert Bergemont
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS-based active pixel sensor cell that utilizes the parasitic bipo...
- Patent number 5,847,422
- Issue date Dec 8, 1998
- Foveonics, Inc.
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a thin poly, capacitor coupled contactless...
- Patent number 5,837,574
- Issue date Nov 17, 1998
- National Semiconductor Corporation
- Albert Bergemont
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable and tunable V.sub.T MOSFET with poly and/or buried diffusion
- Patent number 5,814,856
- Issue date Sep 29, 1998
- National Semiconductor Corporation
- Albert Bergemont
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-convergent method for programming FLASH and EEPROM memory cell...
- Patent number 5,808,937
- Issue date Sep 15, 1998
- National Semiconductor Corporation
- Min-Hwa Chi
- G11 - INFORMATION STORAGE
Information Patent Grant
Neuron MOSFET module structure for binary logic circuits
- Patent number 5,806,054
- Issue date Sep 8, 1998
- National Semiconductor Corporation
- Albert Bergemont
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar-based active pixel sensor cell with metal contact and incre...
- Patent number 5,786,623
- Issue date Jul 28, 1998
- Foveonics, Inc.
- Albert Bergemont
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a contactless capacitor-coupled bipolar active pix...
- Patent number 5,776,795
- Issue date Jul 7, 1998
- Foveonics, Inc.
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-poly EPROM cell that utilizes a reduced programming voltage...
- Patent number 5,761,126
- Issue date Jun 2, 1998
- National Semiconductor Corporation
- Min-hwa Chi
- G11 - INFORMATION STORAGE
Information Patent Grant
Bipolar-based active pixel sensor cell with poly contact and increa...
- Patent number 5,760,458
- Issue date Jun 2, 1998
- Foveonics, Inc.
- Albert Bergemont
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-poly neuron MOS transistor
- Patent number 5,753,954
- Issue date May 19, 1998
- National Semiconductor Corporation
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contactless capacitor-coupled bipolar active pixel sensor with inte...
- Patent number 5,734,191
- Issue date Mar 31, 1998
- National Semiconductor Corporation
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Active pixel sensor cell that utilizes a parasitic transistor to re...
- Patent number 5,710,446
- Issue date Jan 20, 1998
- National Semiconductor Corporation
- Min-hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method for forming dual damascene with improved etch profiles
- Publication number 20060205207
- Publication date Sep 14, 2006
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Ku Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Amorphous carbon contact film for contact hole etch process
- Publication number 20060170058
- Publication date Aug 3, 2006
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wen-Chuan Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Quasi-plannar and FinFET-like transistors on bulk silicon
- Publication number 20050239254
- Publication date Oct 27, 2005
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming polysilicon gate structures with specific edge pr...
- Publication number 20050202642
- Publication date Sep 15, 2005
- Taiwan Semiconductor Manufacturing Co.
- Cheng-Ku Chen
- H01 - BASIC ELECTRIC ELEMENTS

Min-Hwa Chi

Person

Patents Grantslast 30 patents

Quasi-plannar and FinFET-like transistors on bulk silicon

Amorphous carbon contact film for contact hole etch process

Method for forming dual damascene with improved etch profiles

Method of forming polysilicon gate structures with specific edge pr...

Single poly EPROM cell having smaller size and improved data retent...

Single poly EPROM cell having smaller size and improved data retent...

Method for forming a bipolar-based active pixel sensor cell with po...

Capacitive coupled bipolar active pixel imager having overflow prot...

Method for forming a bipolar-based active pixel sensor cell with me...

Neural network active pixel cell

ESD Input protection using a floating gate neuron MOSFET as a tunab...

Active pixel image cell with embedded memory and pixel level signal...

Color active pixel sensor cell with oxide color filter

Single-poly EEPROM cell that is programmable and erasable in a low-...

Capacitor-coupled bipolar active pixel sensor with integrated elect...

Method for forming a mixed-signal CMOS circuit that includes non-vo...

High density EEPROM array using self-aligned control gate and float...

Method of fabricating a high density EEPROM cell

MOS-based active pixel sensor cell that utilizes the parasitic bipo...

Method of manufacturing a thin poly, capacitor coupled contactless...

Variable and tunable V.sub.T MOSFET with poly and/or buried diffusion

Self-convergent method for programming FLASH and EEPROM memory cell...

Neuron MOSFET module structure for binary logic circuits

Bipolar-based active pixel sensor cell with metal contact and incre...

Method of making a contactless capacitor-coupled bipolar active pix...

Single-poly EPROM cell that utilizes a reduced programming voltage...

Bipolar-based active pixel sensor cell with poly contact and increa...

Single-poly neuron MOS transistor

Contactless capacitor-coupled bipolar active pixel sensor with inte...

Active pixel sensor cell that utilizes a parasitic transistor to re...

Patents Applicationslast 30 patents

Method for forming dual damascene with improved etch profiles

Amorphous carbon contact film for contact hole etch process

Quasi-plannar and FinFET-like transistors on bulk silicon

Method of forming polysilicon gate structures with specific edge pr...