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Chengdu, CN
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Patents Grants
last 30 patents
Information
Patent Grant
IGBT device with MOS controllable hole path
Patent number
10,923,583
Issue date
Feb 16, 2021
University of Electronic Science and Technology of China
Zehong Li
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Trench MOS device with improved single event burn-out endurance
Patent number
10,546,951
Issue date
Jan 28, 2020
University of Electronic Science and Technology of China
Min Ren
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Folded termination with internal field plate
Patent number
10,340,332
Issue date
Jul 2, 2019
University of Electronic Science and Technology of China
Min Ren
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Super-junction schottky diode
Patent number
9,929,285
Issue date
Mar 27, 2018
University of Electronic Science and Technology of China
Min Ren
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Bidirectional MOS device and method for preparing the same
Patent number
9,905,682
Issue date
Feb 27, 2018
University of Electronic Science and Technology of China
Jinping Zhang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Bidirectional insulated gate bipolar transistor
Patent number
9,741,837
Issue date
Aug 22, 2017
University of Electronic Science and Technology of China
Jinping Zhang
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
IGBT DEVICE WITH MOS CONTROLLABLE HOLE PATH
Publication number
20200235231
Publication date
Jul 23, 2020
University of Electronic Science and Technology of China
Zehong LI
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
TRENCH MOS DEVICE WITH IMPROVED SINGLE EVENT BURN-OUT ENDURANCE
Publication number
20190371937
Publication date
Dec 5, 2019
University of Electronic Science and Technology of China
Min REN
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Folded Termination with Internal Field Plate
Publication number
20190067415
Publication date
Feb 28, 2019
University of Electronic Science and Technology of China
Min REN
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SUPER-JUNCTION SCHOTTKY DIODE
Publication number
20180026143
Publication date
Jan 25, 2018
University of Electronic Science and Technology of China
Min REN
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Trench Edge Termination Structure for Power Semiconductor Devices
Publication number
20180026129
Publication date
Jan 25, 2018
University of Electronic Science and Technology of China
Min REN
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
BIDIRECTIONAL MOS DEVICE AND METHOD FOR PREPARING THE SAME
Publication number
20170084728
Publication date
Mar 23, 2017
University of Electronic Science and Technology of China
Jinping ZHANG
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
BIDIRECTIONAL INSULATED GATE BIPOLAR TRANSISTOR
Publication number
20160322483
Publication date
Nov 3, 2016
University of Electronic Science and Technology of China
Jinping ZHANG
H01 - BASIC ELECTRIC ELEMENTS