Min She

Person

Albany, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Creating an aligned via and metal line in an integrated circuit inc...
- Patent number 11,081,387
- Issue date Aug 3, 2021
- Marvell Asia Pte, Ltd.
- Runzi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
On-chip inductors
- Patent number 10,892,087
- Issue date Jan 12, 2021
- Marvell Asia Pte, Ltd.
- Min She
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of creating aligned vias in ultra-high density integrated ci...
- Patent number 10,522,394
- Issue date Dec 31, 2019
- Marvell World Trade Ltd.
- Runzi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for connecting signal lines of multiple layers...
- Patent number 8,710,553
- Issue date Apr 29, 2014
- Marvell International Ltd.
- Qiang Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory and interconnect design in fine pitch
- Patent number 8,482,039
- Issue date Jul 9, 2013
- Marvell International Ltd.
- Qiang Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory and interconnect design in fine pitch
- Patent number 8,278,689
- Issue date Oct 2, 2012
- Marvell International Ltd.
- Qiang Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory cell and array
- Patent number 8,120,088
- Issue date Feb 21, 2012
- Marvell International Ltd.
- Min She
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory and interconnect design in fine pitch
- Patent number 8,022,443
- Issue date Sep 20, 2011
- Marvell International Ltd.
- Qiang Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two bit/four bit SONOS flash memory cell
- Patent number 7,629,640
- Issue date Dec 8, 2009
- The Regents of the University of California
- Min She
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Continuous Time Linear Equalizers (CTLEs) of Data Interfaces
- Publication number 20240056075
- Publication date Feb 15, 2024
- PARADE TECHNOLOGIES, LTD.
- Min She
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
CREATING AN ALIGNED VIA AND METAL LINE IN AN INTEGRATED CIRCUIT INC...
- Publication number 20200118868
- Publication date Apr 16, 2020
- Marvell World Trade Ltd.
- Runzi CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF CREATING ALIGNED VIAS IN ULTRA-HIGH DENSITY INTEGRATED CI...
- Publication number 20190096756
- Publication date Mar 28, 2019
- Marvell World Trade Ltd.
- Runzi CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low-voltage memory having flexible gate charging element
- Publication number 20090121273
- Publication date May 14, 2009
- Tsu-Jae King
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Two bit/four bit SONOS flash memory cell
- Publication number 20050242391
- Publication date Nov 3, 2005
- The Regents of the University of California.
- Min She
- G11 - INFORMATION STORAGE
Information Patent Application
Flash memory devices using large electron affinity material for cha...
- Publication number 20050167734
- Publication date Aug 4, 2005
- The Regents of the University of California
- Min She
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Creating an aligned via and metal line in an integrated circuit inc...

On-chip inductors

Method of creating aligned vias in ultra-high density integrated ci...

Method and apparatus for connecting signal lines of multiple layers...

Memory and interconnect design in fine pitch

Memory and interconnect design in fine pitch

Non-volatile memory cell and array

Memory and interconnect design in fine pitch

Two bit/four bit SONOS flash memory cell

Patents Applicationslast 30 patents

Continuous Time Linear Equalizers (CTLEs) of Data Interfaces

CREATING AN ALIGNED VIA AND METAL LINE IN AN INTEGRATED CIRCUIT INC...

METHOD OF CREATING ALIGNED VIAS IN ULTRA-HIGH DENSITY INTEGRATED CI...

Low-voltage memory having flexible gate charging element

Two bit/four bit SONOS flash memory cell

Flash memory devices using large electron affinity material for cha...