Min Yang

Person

Mahopac, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Selective oxidation for making relaxed silicon germanium on insulat...
- Patent number 9,818,761
- Issue date Nov 14, 2017
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature spacer for advanced semiconductor devices
- Patent number 9,590,054
- Issue date Mar 7, 2017
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow extension junction
- Patent number 9,553,107
- Issue date Jan 24, 2017
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual trench isolation for CMOS with hybrid orientations
- Patent number 9,355,887
- Issue date May 31, 2016
- GLOBALFOUNDRIES Inc.
- Victor Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance and defect free epitaxial semiconductor material for...
- Patent number 9,349,649
- Issue date May 24, 2016
- GLOBALFOUNDRIES Inc.
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance and defect free epitaxial semiconductor material for...
- Patent number 9,349,650
- Issue date May 24, 2016
- GLOBALFOUNDRIES Inc.
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D atomic layer gate or junction extender
- Patent number 9,318,318
- Issue date Apr 19, 2016
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow extension junction
- Patent number 9,306,038
- Issue date Apr 5, 2016
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature spacer for advanced semiconductor devices
- Patent number 9,293,557
- Issue date Mar 22, 2016
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET field-effect transistors with atomic layer doping
- Patent number 9,287,136
- Issue date Mar 15, 2016
- GLOBALFOUNDRIES Inc.
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D transistor channel mobility enhancement
- Patent number 9,275,907
- Issue date Mar 1, 2016
- GLOBALFOUNDRIES Inc.
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit including vertical diode
- Patent number 9,064,794
- Issue date Jun 23, 2015
- International Business Machines Corporation
- Thomas Happ
- G11 - INFORMATION STORAGE
Information Patent Grant
Fabrication of field-effect transistors with atomic layer doping
- Patent number 9,048,261
- Issue date Jun 2, 2015
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process variability tolerant hard mask for replacement metal gate f...
- Patent number 9,034,748
- Issue date May 19, 2015
- International Business Machines Corporation
- Christopher V. Baiocco
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
3D transistor channel mobility enhancement
- Patent number 9,023,697
- Issue date May 5, 2015
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating photonics devices fully integrated into a CMOS manufact...
- Patent number 9,006,049
- Issue date Apr 14, 2015
- International Business Machines Corporation
- Solomon Assefa
- G02 - OPTICS
Information Patent Grant
Fabricating photonics devices fully integrated into a CMOS manufact...
- Patent number 9,006,048
- Issue date Apr 14, 2015
- International Business Machines Corporation
- Solomon Assefa
- G02 - OPTICS
Information Patent Grant
Field-effect transistor (FET) with source-drain contact over gate s...
- Patent number 8,969,152
- Issue date Mar 3, 2015
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor (FET) with source-drain contact over gate s...
- Patent number 8,859,381
- Issue date Oct 14, 2014
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement metal gate transistors using bi-layer hardmask
- Patent number 8,748,252
- Issue date Jun 10, 2014
- International Business Machines Corporation
- Effendi Leobandung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabrication of crystalline diodes for resistive memories
- Patent number 8,637,844
- Issue date Jan 28, 2014
- International Business Machines Corporation
- Bipin Rajendran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating photonics devices fully integrated into a CMOS manufact...
- Patent number 8,633,067
- Issue date Jan 21, 2014
- International Business Machines Corporation
- Solomon Assefa
- G02 - OPTICS
Information Patent Grant
Integrated circuit including vertical diode
- Patent number 8,586,960
- Issue date Nov 19, 2013
- International Business Machines Corporation
- Thomas Happ
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for forming a self-aligned bit line for PCRAM and self-align...
- Patent number 8,445,313
- Issue date May 21, 2013
- International Business Machines Corporatoin
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a self-aligned bit line for PCRAM and self-align...
- Patent number 8,273,598
- Issue date Sep 25, 2012
- International Business Machines Corporation
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual trench isolation for CMOS with hybrid orientations
- Patent number 8,097,516
- Issue date Jan 17, 2012
- International Business Machines Corporation
- Victor Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory array with diode driver and method for fabricating the same
- Patent number 8,030,634
- Issue date Oct 4, 2011
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabrication of polycrystalline diodes for resistive memo...
- Patent number 7,955,958
- Issue date Jun 7, 2011
- International Business Machines Corporation
- Bipin Rajendran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement of electron and hole mobilities in <110> Si under biaxi...
- Patent number 7,943,486
- Issue date May 17, 2011
- International Business Machines Corporation
- Victor Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid orientation CMOS with partial insulation process
- Patent number 7,915,100
- Issue date Mar 29, 2011
- International Business Machines Corporation
- Min Yang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELECTIVE OXIDATION FOR MAKING RELAXED SILICON GERMANIUM ON INSULAT...
- Publication number 20160380001
- Publication date Dec 29, 2016
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEFECT REDUCTION IN III-V SEMICONDUCTOR EPITAXY THROUGH CAPPED HIGH...
- Publication number 20160225641
- Publication date Aug 4, 2016
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW EXTENSION JUNCTION
- Publication number 20160172381
- Publication date Jun 16, 2016
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW TEMPERATURE SPACER FOR ADVANCED SEMICONDUCTOR DEVICES
- Publication number 20160141377
- Publication date May 19, 2016
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE AND DEFECT FREE EPITAXIAL SEMICONDUCTOR MATERIAL FOR...
- Publication number 20150380314
- Publication date Dec 31, 2015
- International Business Machines Corporation
- Kevin K. CHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE AND DEFECT FREE EPITAXIAL SEMICONDUCTOR MATERIAL FOR...
- Publication number 20150380489
- Publication date Dec 31, 2015
- International Business Machines Corporation
- Kevin K. CHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF FIELD-EFFECT TRANSISTORS WITH ATOMIC LAYER DOPING
- Publication number 20150236118
- Publication date Aug 20, 2015
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW TEMPERATURE SPACER FOR ADVANCED SEMICONDUCTOR DEVICES
- Publication number 20150236115
- Publication date Aug 20, 2015
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS VARIABILITY TOLERANT HARD MASK FOR REPLACEMENT METAL GATE F...
- Publication number 20150064897
- Publication date Mar 5, 2015
- International Business Machines Corporation
- Christopher V. Baiocco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D TRANSISTOR CHANNEL MOBILITY ENHANCEMENT
- Publication number 20150041858
- Publication date Feb 12, 2015
- International Business Machines Corporation
- KEVIN K. CHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D TRANSISTOR CHANNEL MOBILITY ENHANCEMENT
- Publication number 20150041911
- Publication date Feb 12, 2015
- GLOBALFOUNDRIES, Inc.
- KEVIN K. CHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR (FET) WITH SOURCE-DRAIN CONTACT OVER GATE S...
- Publication number 20140370681
- Publication date Dec 18, 2014
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT METAL GATE TRANSISTORS USING BI-LAYER HARDMASK
- Publication number 20140148003
- Publication date May 29, 2014
- International Business Machines Corporation
- Effendi Leobandung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATING PHOTONICS DEVICES FULLY INTEGRATED INTO A CMOS MANUFACT...
- Publication number 20140080269
- Publication date Mar 20, 2014
- International Business Machines Corporation
- Solomon Assefa
- G02 - OPTICS
Information Patent Application
FABRICATING PHOTONICS DEVICES FULLY INTEGRATED INTO A CMOS MANUFACT...
- Publication number 20140080268
- Publication date Mar 20, 2014
- International Business Machines Corporation
- Solomon Assefa
- G02 - OPTICS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING VERTICAL DIODE
- Publication number 20140065787
- Publication date Mar 6, 2014
- International Business Machines Corporation
- Thomas Happ
- G11 - INFORMATION STORAGE
Information Patent Application
FABRICATION OF FIELD-EFFECT TRANSISTORS WITH ATOMIC LAYER DOPING
- Publication number 20130032883
- Publication date Feb 7, 2013
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF FIELD-EFFECT TRANSISTORS WITH ATOMIC LAYER DOPING
- Publication number 20130032865
- Publication date Feb 7, 2013
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A SELF-ALIGNED BIT LINE FOR PCRAM AND SELF-ALIGN...
- Publication number 20120276688
- Publication date Nov 1, 2012
- Macronix International Co., Ltd.
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A SELF-ALIGNED BIT LINE FOR PCRAM AND SELF-ALIGN...
- Publication number 20120202333
- Publication date Aug 9, 2012
- Macronix International Co., Ltd.
- Matthew J. Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATING PHOTONICS DEVICES FULLY INTEGRATED INTO A CMOS MANUFACT...
- Publication number 20120129302
- Publication date May 24, 2012
- International Business Machines Corporation
- Solomon Assefa
- G02 - OPTICS
Information Patent Application
DUAL TRENCH ISOLATION FOR CMOS WITH HYBRID ORIENTATIONS
- Publication number 20120104511
- Publication date May 3, 2012
- International Business Machines Corporation
- Victor Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATION OF CRYSTALLINE DIODES FOR RESISTIVE MEMORIES
- Publication number 20110198557
- Publication date Aug 18, 2011
- International Business Machines Corporation
- Bipin Rajendran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MUSHROOM TYPE MEMORY CELL HAVING SELF-ALIGNED BOTTOM ELECTRODE AND...
- Publication number 20100019215
- Publication date Jan 28, 2010
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT INCLUDING VERTICAL DIODE
- Publication number 20090316473
- Publication date Dec 24, 2009
- Thomas Happ
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL HAVING A BURIED PHASE CHANGE REGION AND METHOD FOR FABR...
- Publication number 20090261313
- Publication date Oct 22, 2009
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ARRAY WITH DIODE DRIVER AND METHOD FOR FABRICATING THE SAME
- Publication number 20090242865
- Publication date Oct 1, 2009
- Macronix International Co., Ltd
- Hsiang-Lan Lung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATION OF POLYCRYSTALLINE DIODES FOR RESISTIVE MEMO...
- Publication number 20090200534
- Publication date Aug 13, 2009
- IBM Corporation
- Bipin Rajendran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING DIODE MEMORY CELLS
- Publication number 20090185411
- Publication date Jul 23, 2009
- Thomas Happ
- G11 - INFORMATION STORAGE
Information Patent Application
HYBRID ORIENTATION CMOS WITH PARTIAL INSULATION PROCESS
- Publication number 20090035897
- Publication date Feb 5, 2009
- International Business Machines Corporation
- Min Yang
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Selective oxidation for making relaxed silicon germanium on insulat...

Low temperature spacer for advanced semiconductor devices

Shallow extension junction

Dual trench isolation for CMOS with hybrid orientations

Low resistance and defect free epitaxial semiconductor material for...

Low resistance and defect free epitaxial semiconductor material for...

3D atomic layer gate or junction extender

Shallow extension junction

Low temperature spacer for advanced semiconductor devices

FinFET field-effect transistors with atomic layer doping

3D transistor channel mobility enhancement

Integrated circuit including vertical diode

Fabrication of field-effect transistors with atomic layer doping

Process variability tolerant hard mask for replacement metal gate f...

3D transistor channel mobility enhancement

Fabricating photonics devices fully integrated into a CMOS manufact...

Fabricating photonics devices fully integrated into a CMOS manufact...

Field-effect transistor (FET) with source-drain contact over gate s...

Field-effect transistor (FET) with source-drain contact over gate s...

Replacement metal gate transistors using bi-layer hardmask

Method for fabrication of crystalline diodes for resistive memories

Fabricating photonics devices fully integrated into a CMOS manufact...

Integrated circuit including vertical diode

Method for forming a self-aligned bit line for PCRAM and self-align...

Method for forming a self-aligned bit line for PCRAM and self-align...

Dual trench isolation for CMOS with hybrid orientations

Memory array with diode driver and method for fabricating the same

Method for fabrication of polycrystalline diodes for resistive memo...

Enhancement of electron and hole mobilities in <110> Si under biaxi...

Hybrid orientation CMOS with partial insulation process

Patents Applicationslast 30 patents

SELECTIVE OXIDATION FOR MAKING RELAXED SILICON GERMANIUM ON INSULAT...

DEFECT REDUCTION IN III-V SEMICONDUCTOR EPITAXY THROUGH CAPPED HIGH...

SHALLOW EXTENSION JUNCTION

LOW TEMPERATURE SPACER FOR ADVANCED SEMICONDUCTOR DEVICES

LOW RESISTANCE AND DEFECT FREE EPITAXIAL SEMICONDUCTOR MATERIAL FOR...

LOW RESISTANCE AND DEFECT FREE EPITAXIAL SEMICONDUCTOR MATERIAL FOR...

FABRICATION OF FIELD-EFFECT TRANSISTORS WITH ATOMIC LAYER DOPING

LOW TEMPERATURE SPACER FOR ADVANCED SEMICONDUCTOR DEVICES

PROCESS VARIABILITY TOLERANT HARD MASK FOR REPLACEMENT METAL GATE F...

3D TRANSISTOR CHANNEL MOBILITY ENHANCEMENT

3D TRANSISTOR CHANNEL MOBILITY ENHANCEMENT

FIELD-EFFECT TRANSISTOR (FET) WITH SOURCE-DRAIN CONTACT OVER GATE S...

REPLACEMENT METAL GATE TRANSISTORS USING BI-LAYER HARDMASK

FABRICATING PHOTONICS DEVICES FULLY INTEGRATED INTO A CMOS MANUFACT...

FABRICATING PHOTONICS DEVICES FULLY INTEGRATED INTO A CMOS MANUFACT...

INTEGRATED CIRCUIT INCLUDING VERTICAL DIODE

FABRICATION OF FIELD-EFFECT TRANSISTORS WITH ATOMIC LAYER DOPING

FABRICATION OF FIELD-EFFECT TRANSISTORS WITH ATOMIC LAYER DOPING

METHOD FOR FORMING A SELF-ALIGNED BIT LINE FOR PCRAM AND SELF-ALIGN...

METHOD FOR FORMING A SELF-ALIGNED BIT LINE FOR PCRAM AND SELF-ALIGN...

FABRICATING PHOTONICS DEVICES FULLY INTEGRATED INTO A CMOS MANUFACT...

DUAL TRENCH ISOLATION FOR CMOS WITH HYBRID ORIENTATIONS

METHOD FOR FABRICATION OF CRYSTALLINE DIODES FOR RESISTIVE MEMORIES

MUSHROOM TYPE MEMORY CELL HAVING SELF-ALIGNED BOTTOM ELECTRODE AND...

INTEGRATED CIRCUIT INCLUDING VERTICAL DIODE

MEMORY CELL HAVING A BURIED PHASE CHANGE REGION AND METHOD FOR FABR...

MEMORY ARRAY WITH DIODE DRIVER AND METHOD FOR FABRICATING THE SAME

METHOD FOR FABRICATION OF POLYCRYSTALLINE DIODES FOR RESISTIVE MEMO...

INTEGRATED CIRCUIT INCLUDING DIODE MEMORY CELLS

HYBRID ORIENTATION CMOS WITH PARTIAL INSULATION PROCESS