Ming He

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit devices including a via and methods of forming t...
- Patent number 11,978,668
- Issue date May 7, 2024
- Samsung Electronics Co., Ltd.
- Ming He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully aligned via integration with selective catalyzed vapor phase...
- Patent number 11,705,363
- Issue date Jul 18, 2023
- Samsung Electronics Co., Ltd.
- Ming He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Correlated electron material (CEM) devices with contact region side...
- Patent number 11,075,339
- Issue date Jul 27, 2021
- CERFE LABS, INC.
- Ming He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of correlated electron material (CEM) devices with restor...
- Patent number 10,854,811
- Issue date Dec 1, 2020
- ARM Limited
- Paul Raymond Besser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabrication of a CEM device
- Patent number 10,833,271
- Issue date Nov 10, 2020
- ARM Ltd.
- Ming He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of correlated electron material (CEM) devices
- Patent number 10,672,982
- Issue date Jun 2, 2020
- ARM Limited
- Ming He
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for fabrication of a CEM device
- Patent number 10,566,527
- Issue date Feb 18, 2020
- ARM, Ltd.
- Ming He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate structure with spatial arrangement configured for couplin...
- Patent number 10,510,675
- Issue date Dec 17, 2019
- GLOBALFOUNDRIES Inc.
- Somnath Ghosh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a self-forming barrier layer at via bottom
- Patent number RE47630
- Issue date Oct 1, 2019
- GLOBALFOUNDRIES Inc.
- Larry Zhao
Information Patent Grant
Multi-directional self-aligned multiple patterning
- Patent number 10,199,270
- Issue date Feb 5, 2019
- GLOBALFOUNDRIES Inc.
- Colin Bombardier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits including magnetic tunnel junctions for magneto...
- Patent number 9,691,971
- Issue date Jun 27, 2017
- GLOBALFOUNDRIES, INC.
- Seowoo Nam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with self aligned contacts and methods of manuf...
- Patent number 9,576,852
- Issue date Feb 21, 2017
- GLOBALFOUNDRIES, INC.
- Ming He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of producing integrated circuits with an air gap
- Patent number 9,431,294
- Issue date Aug 30, 2016
- GLOBALFOUNDRIES, INC.
- Ming He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Moisture scavenging layer for thinner barrier application in beol i...
- Patent number 9,318,437
- Issue date Apr 19, 2016
- GLOBALFOUNDRIES Inc.
- Ming He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Copper based nitride liner passivation layers for conductive copper...
- Patent number 9,318,436
- Issue date Apr 19, 2016
- GLOBALFOUNDRIES Inc.
- Xunyuan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Acceptance of policies for cross-company online sessions
- Patent number 9,237,140
- Issue date Jan 12, 2016
- Cisco Technologies, Inc.
- Eric Lerner
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Methods for fabricating integrated circuits using improved masks
- Patent number 9,165,770
- Issue date Oct 20, 2015
- GLOBALFOUNDRIES, INC.
- Ming He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electroless fill of trench in semiconductor structure
- Patent number 9,087,881
- Issue date Jul 21, 2015
- GLOBALFOUNDRIES Inc.
- Sean X. Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for integration of pore stuffing material
- Patent number 9,054,052
- Issue date Jun 9, 2015
- Global Foundries Inc.
- Nicholas Vincent Licausi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of self-forming barrier integration with pore stuffed ULK m...
- Patent number 8,932,934
- Issue date Jan 13, 2015
- Global Foundries Inc.
- Moosung M. Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a self-forming barrier layer at via bottom
- Patent number 8,907,483
- Issue date Dec 9, 2014
- GLOBALFOUNDRIES Inc.
- Larry Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming copper-based nitride liner/passivation layers fo...
- Patent number 8,859,419
- Issue date Oct 14, 2014
- GLOBALFOUNDRIES Inc.
- Xunyuan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming conductive copper-based structures using a coppe...
- Patent number 8,753,975
- Issue date Jun 17, 2014
- GLOBALFOUNDRIES Inc.
- Xunyuan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming copper-based conductive structures by forming a...
- Patent number 8,673,766
- Issue date Mar 18, 2014
- GLOBALFOUNDRIES Inc.
- Sean X. Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating integrated circuits with ruthenium-lined co...
- Patent number 8,586,473
- Issue date Nov 19, 2013
- GLOBALFOUNDRIES, INC.
- Kunaljeet Tanwar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming copper-based conductive structures on an integra...
- Patent number 8,517,769
- Issue date Aug 27, 2013
- GLOBALFOUNDRIES Inc.
- Sean X. Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH PERFORMANCE FETS
- Publication number 20240413232
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Mehdi Saremi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR (FET) AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240405128
- Publication date Dec 5, 2024
- Samsung Electronics Co., Ltd.
- Aravindh Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMMON OUTPUT IN 3D STACK FET
- Publication number 20240347537
- Publication date Oct 17, 2024
- Samsung Electronics Co., Ltd.
- Mehdi Saremi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D STACKED FIELD-EFFECT TRANSISTOR DEVICE WITH PN JUNCTION STRUCTURE
- Publication number 20240047539
- Publication date Feb 8, 2024
- Samsung Electronics Co., Ltd.
- Ming HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3DSFET STANDARD CELL ARCHITECTURE WITH SOURCE-DRAIN JUNCTION ISOLATION
- Publication number 20240047456
- Publication date Feb 8, 2024
- Samsung Electronics Co., Ltd.
- Ming HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FULLY ALIGNED VIA INTEGRATION WITH SELECTIVE CATALYZED VAPOR PHASE...
- Publication number 20230317513
- Publication date Oct 5, 2023
- Samsung Electronics Co., Ltd.
- Ming HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET TRANSISTOR DEVICES AND RELATED FABRICATION METHODS
- Publication number 20230178420
- Publication date Jun 8, 2023
- Samsung Electronics Co., Ltd.
- Ming He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRA...
- Publication number 20230178440
- Publication date Jun 8, 2023
- Samsung Electronics Co., Ltd.
- MING HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTORS HAVING AN ISOLATION REGION THEREBETWEEN AND A C...
- Publication number 20230086084
- Publication date Mar 23, 2023
- Samsung Electronics Co., Ltd.
- Seungchan Yun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING A VIA AND METHODS OF FORMING T...
- Publication number 20230074982
- Publication date Mar 9, 2023
- Samsung Electronics Co., Ltd.
- MING HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FULLY ALIGNED VIA INTEGRATION WITH SELECTIVE CATALYZED VAPOR PHASE...
- Publication number 20220301924
- Publication date Sep 22, 2022
- Samsung Electronics Co., Ltd.
- Ming HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRODE FOR CORRELATED ELECTRON DEVICE
- Publication number 20210226124
- Publication date Jul 22, 2021
- Cerfe Labs, Inc.
- Ming He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPANT ACTIVATION ANNEAL FOR CORRELATED ELECTRON DEVICE
- Publication number 20210066593
- Publication date Mar 4, 2021
- Cerfe Labs, Inc.
- Ming He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Layered Structure Having a Barrier Layer
- Publication number 20200357996
- Publication date Nov 12, 2020
- ARM Limited
- Ming He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CORRELATED ELECTRON SWITCH DEVICE SIDEWALL RESTORATION
- Publication number 20200295260
- Publication date Sep 17, 2020
- ARM Limited
- Xueming Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF CORRELATED ELECTRON MATERIAL (CEM) DEVICES
- Publication number 20200295259
- Publication date Sep 17, 2020
- ARM Limited
- Ming He
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR FABRICATION OF A CEM DEVICE
- Publication number 20200259083
- Publication date Aug 13, 2020
- ARM Limited
- Ming He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF CORRELATED ELECTRON MATERIAL (CEM) DEVICES
- Publication number 20200176676
- Publication date Jun 4, 2020
- ARM Limited
- Ming He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CORRELATED ELECTRON MATERIAL (CEM) DEVICES WITH CONTACT REGION SIDE...
- Publication number 20200127200
- Publication date Apr 23, 2020
- ARM Limited
- Ming He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF CORRELATED ELECTRON MATERIAL (CEM) DEVICES WITH RESTOR...
- Publication number 20200127196
- Publication date Apr 23, 2020
- ARM Limited
- Paul Raymond Besser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATION OF A CEM DEVICE
- Publication number 20190296232
- Publication date Sep 26, 2019
- ARM Ltd.
- Ming HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATION OF A CEM DEVICE
- Publication number 20190296236
- Publication date Sep 26, 2019
- ARM Ltd.
- Ming HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATION OF A CEM DEVICE
- Publication number 20190296231
- Publication date Sep 26, 2019
- ARM Ltd.
- Ming HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE STRUCTURE WITH SPATIAL ARRANGEMENT CONFIGURED FOR COUPLIN...
- Publication number 20190244911
- Publication date Aug 8, 2019
- GLOBALFOUNDRIES INC.
- Somnath Ghosh
- G01 - MEASURING TESTING
Information Patent Application
MULTI-DIRECTIONAL SELF-ALIGNED MULTIPLE PATTERNING
- Publication number 20180342421
- Publication date Nov 29, 2018
- GLOBALFOUNDRIES INC.
- Colin Bombardier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AMORPHOUS METAL INTERCONNECTIONS BY SUBTRACTIVE ETCH
- Publication number 20170154816
- Publication date Jun 1, 2017
- GLOBALFOUNDRIES INC.
- Sean X. LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH SELF ALIGNED CONTACTS AND METHODS OF MANUF...
- Publication number 20160379881
- Publication date Dec 29, 2016
- GLOBALFOUNDRIES, Inc.
- Ming He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS INCLUDING MAGNETIC TUNNEL JUNCTIONS FOR MAGNETO...
- Publication number 20160190207
- Publication date Jun 30, 2016
- GLOBALFOUNDRIES, Inc.
- Seowoo Nam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH AN AIR GAP AND METHODS OF PRODUCING THE SAME
- Publication number 20160118292
- Publication date Apr 28, 2016
- GLOBALFOUNDRIES, Inc.
- Ming He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-FORMING BARRIER INTEGRATED WITH SELF-ALIGNED CAP
- Publication number 20150228585
- Publication date Aug 13, 2015
- GLOBALFOUNDRIES INC.
- Ming HE
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Integrated circuit devices including a via and methods of forming t...

Fully aligned via integration with selective catalyzed vapor phase...

Correlated electron material (CEM) devices with contact region side...

Formation of correlated electron material (CEM) devices with restor...

Method for fabrication of a CEM device

Fabrication of correlated electron material (CEM) devices

Method for fabrication of a CEM device

Substrate structure with spatial arrangement configured for couplin...

Semiconductor device having a self-forming barrier layer at via bottom

Multi-directional self-aligned multiple patterning

Integrated circuits including magnetic tunnel junctions for magneto...

Integrated circuits with self aligned contacts and methods of manuf...

Methods of producing integrated circuits with an air gap

Moisture scavenging layer for thinner barrier application in beol i...

Copper based nitride liner passivation layers for conductive copper...

Acceptance of policies for cross-company online sessions

Methods for fabricating integrated circuits using improved masks

Electroless fill of trench in semiconductor structure

Methods for integration of pore stuffing material

Methods of self-forming barrier integration with pore stuffed ULK m...

Semiconductor device having a self-forming barrier layer at via bottom

Methods of forming copper-based nitride liner/passivation layers fo...

Methods of forming conductive copper-based structures using a coppe...

Methods of forming copper-based conductive structures by forming a...

Methods for fabricating integrated circuits with ruthenium-lined co...

Methods of forming copper-based conductive structures on an integra...

Patents Applicationslast 30 patents

HIGH PERFORMANCE FETS

FIELD EFFECT TRANSISTOR (FET) AND METHOD OF MANUFACTURING THE SAME

COMMON OUTPUT IN 3D STACK FET

3D STACKED FIELD-EFFECT TRANSISTOR DEVICE WITH PN JUNCTION STRUCTURE

3DSFET STANDARD CELL ARCHITECTURE WITH SOURCE-DRAIN JUNCTION ISOLATION

FULLY ALIGNED VIA INTEGRATION WITH SELECTIVE CATALYZED VAPOR PHASE...

NANOSHEET TRANSISTOR DEVICES AND RELATED FABRICATION METHODS

METHODS OF FORMING INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRA...

STACKED TRANSISTORS HAVING AN ISOLATION REGION THEREBETWEEN AND A C...

INTEGRATED CIRCUIT DEVICES INCLUDING A VIA AND METHODS OF FORMING T...

FULLY ALIGNED VIA INTEGRATION WITH SELECTIVE CATALYZED VAPOR PHASE...

ELECTRODE FOR CORRELATED ELECTRON DEVICE

DOPANT ACTIVATION ANNEAL FOR CORRELATED ELECTRON DEVICE

Multi-Layered Structure Having a Barrier Layer

CORRELATED ELECTRON SWITCH DEVICE SIDEWALL RESTORATION

FABRICATION OF CORRELATED ELECTRON MATERIAL (CEM) DEVICES

METHOD FOR FABRICATION OF A CEM DEVICE

FABRICATION OF CORRELATED ELECTRON MATERIAL (CEM) DEVICES

CORRELATED ELECTRON MATERIAL (CEM) DEVICES WITH CONTACT REGION SIDE...

FORMATION OF CORRELATED ELECTRON MATERIAL (CEM) DEVICES WITH RESTOR...

METHOD FOR FABRICATION OF A CEM DEVICE

METHOD FOR FABRICATION OF A CEM DEVICE

METHOD FOR FABRICATION OF A CEM DEVICE

SUBSTRATE STRUCTURE WITH SPATIAL ARRANGEMENT CONFIGURED FOR COUPLIN...

MULTI-DIRECTIONAL SELF-ALIGNED MULTIPLE PATTERNING

AMORPHOUS METAL INTERCONNECTIONS BY SUBTRACTIVE ETCH

INTEGRATED CIRCUITS WITH SELF ALIGNED CONTACTS AND METHODS OF MANUF...

INTEGRATED CIRCUITS INCLUDING MAGNETIC TUNNEL JUNCTIONS FOR MAGNETO...

INTEGRATED CIRCUITS WITH AN AIR GAP AND METHODS OF PRODUCING THE SAME

SELF-FORMING BARRIER INTEGRATED WITH SELF-ALIGNED CAP