Ming-Hsiang Hsueh

Person

Hsinchu City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Current constricting phase change memory element structure
- Patent number 7,932,507
- Issue date Apr 26, 2011
- International Business Machines Corporation
- Chieh-Fang Chen
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for manufacturing memory cell
- Patent number 7,795,088
- Issue date Sep 14, 2010
- Macronix International Co., Ltd.
- Tzu-Hsuan Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating inverted T-shaped floating gate memory
- Patent number 7,785,963
- Issue date Aug 31, 2010
- Macronix International Co., Ltd.
- Ming-Hsiang Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing non-volatile memory
- Patent number 7,772,068
- Issue date Aug 10, 2010
- Macronix International Co., Ltd.
- Ming-Hsiang Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Current constricting phase change memory element structure
- Patent number 7,745,807
- Issue date Jun 29, 2010
- International Business Machines Corporation
- Chieh-Fang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory structure and operating method thereof
- Patent number 7,593,262
- Issue date Sep 22, 2009
- Macronix International Co., Ltd.
- Chao-I Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of fabricating a non-volatile semiconductor memory device
- Patent number 7,521,321
- Issue date Apr 21, 2009
- Macronix International Co., Ltd.
- Yen-Hao Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating chalcogenide-applied memory
- Patent number 7,381,982
- Issue date Jun 3, 2008
- Macronix International Co., Ltd.
- Ming-Hsiang Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chalcogenide random access memory
- Patent number 7,326,951
- Issue date Feb 5, 2008
- Macronix International Co., Ltd.
- Ming-Hsiang Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of refreshing charge-trapping non-volatile memory using band...
- Patent number 7,218,554
- Issue date May 15, 2007
- Macronix International Co., Ltd.
- Cheng-Hsing Hsu
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of fabricating non-volatile memory
- Patent number 7,160,794
- Issue date Jan 9, 2007
- Macronix International Co., Ltd.
- Ming-Hsiang Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chalcogenide random access memory and method of fabricating the same
- Patent number 6,972,429
- Issue date Dec 6, 2005
- Macronix International Co, Ltd.
- Ming-Hsiang Hsueh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CURRENT CONSTRICTING PHASE CHANGE MEMORY ELEMENT STRUCTURE
- Publication number 20100193763
- Publication date Aug 5, 2010
- International Business Machines Corporation
- Chieh-Fang Chen
- B82 - NANO-TECHNOLOGY
Information Patent Application
Inverted T-Shaped Floating Gate Memory and Method for Fabricating t...
- Publication number 20090215256
- Publication date Aug 27, 2009
- Macronix International Co., Ltd.
- Ming-Hsiang HSUEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING INVERTED T-SHAPED FLOATING GATE MEMORY
- Publication number 20090130835
- Publication date May 21, 2009
- MACRONIX INTERNATIONAL CO., LTD.
- Erh-Kun LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CURRENT CONSTRICTING PHASE CHANGE MEMORY ELEMENT STRUCTURE
- Publication number 20090014704
- Publication date Jan 15, 2009
- International Business Machines Corporation
- Chieh-Fang Chen
- B82 - NANO-TECHNOLOGY
Information Patent Application
MEMORY CELL AND METHOD FOR MANUFACTURING AND OPERATING THE SAME
- Publication number 20080290397
- Publication date Nov 27, 2008
- Macronix International Co., Ltd.
- Tzu-Hsuan Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND A METHOD OF FABRICATIN...
- Publication number 20080164513
- Publication date Jul 10, 2008
- Macronix International Co., Ltd.
- Yen-Hao Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Resistance Limited Phase Change Memory Material
- Publication number 20080165569
- Publication date Jul 10, 2008
- Chieh-Fang Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Memory structure and operating method thereof
- Publication number 20080137407
- Publication date Jun 12, 2008
- MACRONIX INTERNATIONAL CO., LTD
- Chao-I Wu
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF MANUFACTURING NON-VOLATILE MEMORY
- Publication number 20080057651
- Publication date Mar 6, 2008
- Macronix International Co., Ltd.
- Ming-Hsiang Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating chalcogenide-applied memory
- Publication number 20070045605
- Publication date Mar 1, 2007
- MACRONIX INTERNATIONAL CO., LTD
- Ming-Hsiang Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY CELL AND OPERATING METHOD THEREOF
- Publication number 20070008777
- Publication date Jan 11, 2007
- Ming-Hsiang Hsueh
- G11 - INFORMATION STORAGE
Information Patent Application
Method of refreshing a charge-trapping nonvolatile memory using ban...
- Publication number 20060279997
- Publication date Dec 14, 2006
- Macronix International Co., Ltd.
- CHENG-HSING HSU
- G11 - INFORMATION STORAGE
Information Patent Application
CHALCOGENIDE RANDOM ACCESS MEMORY AND METHOD OF FABRICATING THE SAME
- Publication number 20060131618
- Publication date Jun 22, 2006
- Ming-Hsiang Hsueh
- H01 - BASIC ELECTRIC ELEMENTS

Ming-Hsiang Hsueh

Person

Patents Grantslast 30 patents

Current constricting phase change memory element structure

Method for manufacturing memory cell

Method for fabricating inverted T-shaped floating gate memory

Method of manufacturing non-volatile memory

Current constricting phase change memory element structure

Memory structure and operating method thereof

Method of fabricating a non-volatile semiconductor memory device

Method for fabricating chalcogenide-applied memory

Chalcogenide random access memory

Method of refreshing charge-trapping non-volatile memory using band...

Method of fabricating non-volatile memory

Chalcogenide random access memory and method of fabricating the same

Patents Applicationslast 30 patents

CURRENT CONSTRICTING PHASE CHANGE MEMORY ELEMENT STRUCTURE

Inverted T-Shaped Floating Gate Memory and Method for Fabricating t...

METHOD OF MANUFACTURING INVERTED T-SHAPED FLOATING GATE MEMORY

CURRENT CONSTRICTING PHASE CHANGE MEMORY ELEMENT STRUCTURE

MEMORY CELL AND METHOD FOR MANUFACTURING AND OPERATING THE SAME

NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND A METHOD OF FABRICATIN...

Resistance Limited Phase Change Memory Material

Memory structure and operating method thereof

METHOD OF MANUFACTURING NON-VOLATILE MEMORY

Method for fabricating chalcogenide-applied memory

NON-VOLATILE MEMORY CELL AND OPERATING METHOD THEREOF

Method of refreshing a charge-trapping nonvolatile memory using ban...

CHALCOGENIDE RANDOM ACCESS MEMORY AND METHOD OF FABRICATING THE SAME