Ming Li

Person

Gyeonggi-do, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Methods of manufacturing semiconductor devices having a support str...
- Patent number 8,815,702
- Issue date Aug 26, 2014
- Samsung Electronics Co., Ltd.
- Chang-Woo Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating devices including source/drain region with a...
- Patent number 8,679,910
- Issue date Mar 25, 2014
- Samsung Electronics Co., Ltd.
- Li Ming
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with buried gate pattern
- Patent number 8,680,588
- Issue date Mar 25, 2014
- Samsung Electronics Co., Ltd.
- Ming Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having a support structure for an active laye...
- Patent number 8,426,901
- Issue date Apr 23, 2013
- Samsung Electronics Co., Ltd.
- Chang-woo Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single electron transistor
- Patent number 8,124,961
- Issue date Feb 28, 2012
- Samsung Electronics Co., Ltd.
- Sung-Dae Suk
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of fabricating a semiconductor device with multiple channels
- Patent number 8,008,141
- Issue date Aug 30, 2011
- Samsung Electronics Co., Ltd.
- Ming Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having a support structure for an active laye...
- Patent number 7,989,854
- Issue date Aug 2, 2011
- Samsung Electronics Co., Ltd.
- Chang-woo Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single electron transistor and method of manufacturing the same
- Patent number 7,955,932
- Issue date Jun 7, 2011
- Samsung Electronics Co., Ltd.
- Sung-Dae Suk
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Methods of forming integrated circuit devices including a depletion...
- Patent number 7,858,457
- Issue date Dec 28, 2010
- Samsung Electronics Co., Ltd.
- Ming Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with multiple channels
- Patent number 7,579,657
- Issue date Aug 25, 2009
- Samsung Electronics Co., Ltd.
- Ming Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi bridge channel field effect transistors with nano-wire channe...
- Patent number 7,427,788
- Issue date Sep 23, 2008
- Samsung Electronics Co., Ltd.
- Ming Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices including an L-shaped depletion barrier...
- Patent number 7,396,730
- Issue date Jul 8, 2008
- Samsung Electronics Co., Ltd.
- Ming Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating field effect transistor (FET) having wire cha...
- Patent number 7,374,986
- Issue date May 20, 2008
- Samsung Electronics Co., Ltd.
- Sungmin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with buried gate pattern
- Patent number 7,361,545
- Issue date Apr 22, 2008
- Samsung Electronics Co., Ltd.
- Ming Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating fin field transistors
- Patent number 7,332,386
- Issue date Feb 19, 2008
- Samsung Electronics Co., Ltd.
- Chul Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor (FET) having wire channels and method of fa...
- Patent number 7,274,051
- Issue date Sep 25, 2007
- Samsung Electronics Co., Ltd.
- Sungmin Kim
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method of Manufacturing a Semiconductor Device
- Publication number 20130224925
- Publication date Aug 29, 2013
- Chang-Woo Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Fabricating Devices Including Source/Drain Region with A...
- Publication number 20120088342
- Publication date Apr 12, 2012
- SAMSUNG ELECTRONICS CO., LTD.
- Li Ming
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices Having a Support Structure for an Active Laye...
- Publication number 20110248376
- Publication date Oct 13, 2011
- Chang-woo Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE ELECTRON TRANSISTOR
- Publication number 20110233523
- Publication date Sep 29, 2011
- Samsung Electronics Co., Ltd.
- Sung-Dae SUK
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE WITH MULTIPLE CHANNELS AND METHOD OF FABRICATI...
- Publication number 20090275177
- Publication date Nov 5, 2009
- Samsung Electronics Co., Ltd.
- Ming Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Single electron transistor and method of manufacturing the same
- Publication number 20080246021
- Publication date Oct 9, 2008
- Samsung Electronic Co., Ltd.,
- Sung-Dae Suk
- B82 - NANO-TECHNOLOGY
Information Patent Application
Methods of Forming Integrated Circuit Devices Including a Depletion...
- Publication number 20080233701
- Publication date Sep 25, 2008
- Ming Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor with buried gate pattern
- Publication number 20080142904
- Publication date Jun 19, 2008
- Ming Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating field effect transistor (FET) having wire cha...
- Publication number 20080020537
- Publication date Jan 24, 2008
- Samsung Electronics Co., Ltd.
- Sungmin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with multiple channels and method of fabricati...
- Publication number 20070158679
- Publication date Jul 12, 2007
- SAMSUNG ELECTRONICS CO., LTD.
- Ming Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor with buried gate pattern
- Publication number 20060131666
- Publication date Jun 22, 2006
- Ming Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi bridge channel field effect transistors with nano-wire channe...
- Publication number 20060091481
- Publication date May 4, 2006
- Ming Li
- B82 - NANO-TECHNOLOGY
Information Patent Application
Field effect transistor (FET) having wire channels and method of fa...
- Publication number 20060049429
- Publication date Mar 9, 2006
- Sungmin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor devices having a support structure for an active laye...
- Publication number 20060029887
- Publication date Feb 9, 2006
- Chang-woo Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin field effect transistors and methods of fabricating the same
- Publication number 20050269629
- Publication date Dec 8, 2005
- Chul Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit devices including a depletion barrier layer at s...
- Publication number 20050173735
- Publication date Aug 11, 2005
- Ming Li
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Methods of manufacturing semiconductor devices having a support str...

Methods of fabricating devices including source/drain region with a...

Field effect transistor with buried gate pattern

Semiconductor devices having a support structure for an active laye...

Single electron transistor

Method of fabricating a semiconductor device with multiple channels

Semiconductor devices having a support structure for an active laye...

Single electron transistor and method of manufacturing the same

Methods of forming integrated circuit devices including a depletion...

Semiconductor device with multiple channels

Multi bridge channel field effect transistors with nano-wire channe...

Integrated circuit devices including an L-shaped depletion barrier...

Method of fabricating field effect transistor (FET) having wire cha...

Field effect transistor with buried gate pattern

Methods of fabricating fin field transistors

Field effect transistor (FET) having wire channels and method of fa...

Patents Applicationslast 30 patents

Method of Manufacturing a Semiconductor Device

Methods of Fabricating Devices Including Source/Drain Region with A...

Semiconductor Devices Having a Support Structure for an Active Laye...

SINGLE ELECTRON TRANSISTOR

SEMICONDUCTOR DEVICE WITH MULTIPLE CHANNELS AND METHOD OF FABRICATI...

Single electron transistor and method of manufacturing the same

Methods of Forming Integrated Circuit Devices Including a Depletion...

Field effect transistor with buried gate pattern

Method of fabricating field effect transistor (FET) having wire cha...

Semiconductor device with multiple channels and method of fabricati...

Field effect transistor with buried gate pattern

Multi bridge channel field effect transistors with nano-wire channe...

Field effect transistor (FET) having wire channels and method of fa...

Semiconductor devices having a support structure for an active laye...

Fin field effect transistors and methods of fabricating the same

Integrated circuit devices including a depletion barrier layer at s...