MING-TA LEI

Person

HSIN-CHU CITY, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming a transistor device with a gate structure having...
- Patent number 12,176,407
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Liang Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Breakdown voltage capability of high voltage device
- Patent number 12,027,526
- Issue date Jul 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Chih Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sensor in an internet-of-things
- Patent number 11,987,891
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Ming-Ta Lei
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for forming an IC including a varactor with reduced surface...
- Patent number 11,978,810
- Issue date May 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Liang-Yu Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plate design to decrease noise in semiconductor devices
- Patent number 11,923,429
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Chang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field plate structure to enhance transistor breakdown voltage
- Patent number 11,916,115
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Cheng Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,538,914
- Issue date Dec 27, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Ta-Yuan Kung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Breakdown voltage capability of high voltage device
- Patent number 11,508,757
- Issue date Nov 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Chih Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with a gate structure having recesses overlying a...
- Patent number 11,444,169
- Issue date Sep 13, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Liang Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Avalanche-protected transistors using a bottom breakdown current pa...
- Patent number 11,437,466
- Issue date Sep 6, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Liang-Yu Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of sensor in an internet-of-things
- Patent number 11,414,763
- Issue date Aug 16, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Ming-Ta Lei
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Field plate structure to enhance transistor breakdown voltage
- Patent number 11,121,225
- Issue date Sep 14, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Cheng Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plate design to decrease noise in semiconductor devices
- Patent number 11,107,899
- Issue date Aug 31, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Chang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced surface field layer in varactor
- Patent number 11,018,266
- Issue date May 25, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Liang-Yu Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plate design to decrease noise in semiconductor devices
- Patent number 11,011,610
- Issue date May 18, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Chang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 10,985,256
- Issue date Apr 20, 2021
- Taiwan Semiconductor Manufacturing Company Ltd.
- Ta-Yuan Kung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 10,686,047
- Issue date Jun 16, 2020
- Taiwan Semiconductor Manufacturing Company Ltd.
- Ta-Yuan Kung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective polysilicon doping for gate induced drain leakage improve...
- Patent number 10,680,019
- Issue date Jun 9, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chen-Liang Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plate design to decrease noise in semiconductor devices
- Patent number 10,658,482
- Issue date May 19, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Chang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sensor in an internet-of-things and manufacturing method of the same
- Patent number 10,508,345
- Issue date Dec 17, 2019
- Taiwan Semiconductor Manufacturing Company Ltd.
- Ming-Ta Lei
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Selective polysilicon doping for gate induced drain leakage improve...
- Patent number 10,276,596
- Issue date Apr 30, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chen-Liang Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and method for forming the same
- Patent number 10,164,037
- Issue date Dec 25, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ker-Hsiao Huo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra high voltage electrostatic discharge protection device with c...
- Patent number 10,014,288
- Issue date Jul 3, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Chih Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for forming the same
- Patent number 9,653,594
- Issue date May 16, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Chi Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Active region design layout
- Patent number 9,529,956
- Issue date Dec 27, 2016
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chen-Liang Liao
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device having drain side contact through buried oxide
- Patent number 9,431,531
- Issue date Aug 30, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tung-Yang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced breakdown voltages for high voltage MOSFETS
- Patent number 9,412,863
- Issue date Aug 9, 2016
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Chih Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra high voltage electrostatic discharge protection device with c...
- Patent number 9,379,179
- Issue date Jun 28, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin-Chih Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low fabrication cost, high performance, high reliability chip scale...
- Patent number 9,369,175
- Issue date Jun 14, 2016
- QUALCOMM Incorporated
- Jin-Yuan Lee
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Integrated circuit for high-voltage device protection
- Patent number 9,343,465
- Issue date May 17, 2016
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chen-Liang Chu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTOR STRUCTURE AND METHODS OF FORMATION
- Publication number 20240379845
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Liang CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH RECESSED GATE STRUCTURE
- Publication number 20240379789
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Liang Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240379791
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- TA-CHUAN LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ENHANCED AVALANCHE RUGGEDNESS
- Publication number 20240371926
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- LIANG-YU SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BREAKDOWN VOLTAGE CAPABILITY OF HIGH VOLTAGE DEVICE
- Publication number 20240321894
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin-Chih CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SENSOR IN AN INTERNET-OF-THINGS
- Publication number 20240271287
- Publication date Aug 15, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- MING-TA LEI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
TRANSISTOR DEVICE HAVING A GATE SETBACK FROM A GATE DIELECTRIC
- Publication number 20240258373
- Publication date Aug 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Yuan Kung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED SURFACE FIELD LAYER IN VARACTOR
- Publication number 20240250188
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Liang-Yu Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE
- Publication number 20240186408
- Publication date Jun 6, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Chen-Liang Chu
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Application
FIELD PLATE STRUCTURE TO ENHANCE TRANSISTOR BREAKDOWN VOLTAGE
- Publication number 20230378286
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Cheng Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD OF FORMATION
- Publication number 20230026676
- Publication date Jan 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Chang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BREAKDOWN VOLTAGE CAPABILITY OF HIGH VOLTAGE DEVICE
- Publication number 20230014120
- Publication date Jan 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin-Chih CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH RECESSED GATE STRUCTURE
- Publication number 20220367655
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Liang Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AVALANCHE-PROTECTED TRANSISTORS USING A BOTTOM BREAKDOWN CURRENT PA...
- Publication number 20220367614
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Liang-Yu SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SENSOR IN AN INTERNET-OF-THINGS
- Publication number 20220333251
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- MING-TA LEI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
BREAKDOWN VOLTAGE CAPABILITY OF HIGH VOLTAGE DEVICE
- Publication number 20220223625
- Publication date Jul 14, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Chih Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AVALANCHE-PROTECTED TRANSISTORS USING A BOTTOM BREAKDOWN CURRENT PA...
- Publication number 20220052153
- Publication date Feb 17, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Liang-Yu SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD PLATE STRUCTURE TO ENHANCE TRANSISTOR BREAKDOWN VOLTAGE
- Publication number 20210384302
- Publication date Dec 9, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Cheng Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLATE DESIGN TO DECREASE NOISE IN SEMICONDUCTOR DEVICES
- Publication number 20210376100
- Publication date Dec 2, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Chang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED SURFACE FIELD LAYER IN VARACTOR
- Publication number 20210273119
- Publication date Sep 2, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Liang-Yu Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH RECESSED GATE STRUCTURE
- Publication number 20210273069
- Publication date Sep 2, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Chen-Liang Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20210226025
- Publication date Jul 22, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- TA-YUAN KUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD PLATE STRUCTURE TO ENHANCE TRANSISTOR BREAKDOWN VOLTAGE
- Publication number 20210134964
- Publication date May 6, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Chia-Cheng Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20200295148
- Publication date Sep 17, 2020
- Taiwan Semiconductor Manufacturing company Ltd.
- TA-YUAN KUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLATE DESIGN TO DECREASE NOISE IN SEMICONDUCTOR DEVICES
- Publication number 20200227528
- Publication date Jul 16, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Chih-Chang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLATE DESIGN TO DECREASE NOISE IN SEMICONDUCTOR DEVICES
- Publication number 20200227529
- Publication date Jul 16, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Chih-Chang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED SURFACE FIELD LAYER IN VARACTOR
- Publication number 20200127146
- Publication date Apr 23, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Liang-Yu Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SENSOR IN AN INTERNET-OF-THINGS
- Publication number 20200109476
- Publication date Apr 9, 2020
- Taiwan Semiconductor Manufacturing company Ltd.
- MING-TA LEI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20190363165
- Publication date Nov 28, 2019
- Taiwan Semiconductor Manufacturing company Ltd.
- TA-YUAN KUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE POLYSILICON DOPING FOR GATE INDUCED DRAIN LEAKAGE IMPROVE...
- Publication number 20190237485
- Publication date Aug 1, 2019
- Taiwan Semiconductor Manufacturing Co., LTD
- Chen-Liang Chu
- H01 - BASIC ELECTRIC ELEMENTS

MING-TA LEI

Person

Patents Grantslast 30 patents

Method of forming a transistor device with a gate structure having...

Breakdown voltage capability of high voltage device

Sensor in an internet-of-things

Method for forming an IC including a varactor with reduced surface...

Plate design to decrease noise in semiconductor devices

Field plate structure to enhance transistor breakdown voltage

Semiconductor device

Breakdown voltage capability of high voltage device

Transistor device with a gate structure having recesses overlying a...

Avalanche-protected transistors using a bottom breakdown current pa...

Manufacturing method of sensor in an internet-of-things

Field plate structure to enhance transistor breakdown voltage

Plate design to decrease noise in semiconductor devices

Reduced surface field layer in varactor

Plate design to decrease noise in semiconductor devices

Semiconductor device and method for manufacturing the same

Semiconductor device and method for manufacturing the same

Selective polysilicon doping for gate induced drain leakage improve...

Plate design to decrease noise in semiconductor devices

Sensor in an internet-of-things and manufacturing method of the same

Selective polysilicon doping for gate induced drain leakage improve...

Semiconductor device structure and method for forming the same

Ultra high voltage electrostatic discharge protection device with c...

Semiconductor device and method for forming the same

Active region design layout

Semiconductor device having drain side contact through buried oxide

Enhanced breakdown voltages for high voltage MOSFETS

Ultra high voltage electrostatic discharge protection device with c...

Low fabrication cost, high performance, high reliability chip scale...

Integrated circuit for high-voltage device protection

Patents Applicationslast 30 patents

TRANSISTOR STRUCTURE AND METHODS OF FORMATION

TRANSISTOR DEVICE WITH RECESSED GATE STRUCTURE

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE WITH ENHANCED AVALANCHE RUGGEDNESS

BREAKDOWN VOLTAGE CAPABILITY OF HIGH VOLTAGE DEVICE

SENSOR IN AN INTERNET-OF-THINGS

TRANSISTOR DEVICE HAVING A GATE SETBACK FROM A GATE DIELECTRIC

REDUCED SURFACE FIELD LAYER IN VARACTOR

TRANSISTOR STRUCTURE

FIELD PLATE STRUCTURE TO ENHANCE TRANSISTOR BREAKDOWN VOLTAGE

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD OF FORMATION

BREAKDOWN VOLTAGE CAPABILITY OF HIGH VOLTAGE DEVICE

TRANSISTOR DEVICE WITH RECESSED GATE STRUCTURE

AVALANCHE-PROTECTED TRANSISTORS USING A BOTTOM BREAKDOWN CURRENT PA...

SENSOR IN AN INTERNET-OF-THINGS

BREAKDOWN VOLTAGE CAPABILITY OF HIGH VOLTAGE DEVICE

AVALANCHE-PROTECTED TRANSISTORS USING A BOTTOM BREAKDOWN CURRENT PA...

FIELD PLATE STRUCTURE TO ENHANCE TRANSISTOR BREAKDOWN VOLTAGE

PLATE DESIGN TO DECREASE NOISE IN SEMICONDUCTOR DEVICES

REDUCED SURFACE FIELD LAYER IN VARACTOR

TRANSISTOR DEVICE WITH RECESSED GATE STRUCTURE

SEMICONDUCTOR DEVICE

FIELD PLATE STRUCTURE TO ENHANCE TRANSISTOR BREAKDOWN VOLTAGE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

PLATE DESIGN TO DECREASE NOISE IN SEMICONDUCTOR DEVICES

PLATE DESIGN TO DECREASE NOISE IN SEMICONDUCTOR DEVICES

REDUCED SURFACE FIELD LAYER IN VARACTOR

MANUFACTURING METHOD OF SENSOR IN AN INTERNET-OF-THINGS

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SELECTIVE POLYSILICON DOPING FOR GATE INDUCED DRAIN LEAKAGE IMPROVE...