Ming-Yeh Chuang

Person

McKinney, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Uniform implant regions in a semiconductor ridge of a FinfET
- Patent number 12,113,121
- Issue date Oct 8, 2024
- Texas Instruments Incorporated
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor with field plating
- Patent number 12,074,216
- Issue date Aug 27, 2024
- Texas Instruments Incorporated
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
finFET with lateral charge balance at the drain drift region
- Patent number 11,916,142
- Issue date Feb 27, 2024
- Texas Instruments Incorporated
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor with merged drift region
- Patent number 11,658,184
- Issue date May 23, 2023
- Texas Instruments Incorporated
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor with field plating
- Patent number 11,508,842
- Issue date Nov 22, 2022
- Texas Instruments Incorporated
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform implant regions in a semiconductor ridge of a FinFET
- Patent number 11,437,496
- Issue date Sep 6, 2022
- Texas Instruments Incorporated
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with lateral charge balance at the drain drift region
- Patent number 11,152,506
- Issue date Oct 19, 2021
- Texas Instruments Incorporated
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with field plate over tapered trench isolation
- Patent number 11,121,224
- Issue date Sep 14, 2021
- Texas Instruments Incorporated
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS transistor with gate structure having alternating regions of...
- Patent number 11,004,971
- Issue date May 11, 2021
- Texas Instruments Incorporated
- Sameer Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolated IC with transistors having LOCOS gate dielectric
- Patent number 10,586,730
- Issue date Mar 10, 2020
- Texas Instruments Incorporated
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS transistor with segmented gate dielectric layer
- Patent number 10,211,335
- Issue date Feb 19, 2019
- Texas Instruments Incorporated
- Sameer Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolated IC with transistors having locos gate dielectric
- Patent number 10,014,206
- Issue date Jul 3, 2018
- Texas Instruments Incorporated
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally diffused metal oxide semiconductor with segmented gate oxide
- Patent number 9,865,729
- Issue date Jan 9, 2018
- Texas Instruments Incorporated
- Sameer Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Making ESD diode with P-S/D overlying N-well and P-EPI portion
- Patent number 9,105,567
- Issue date Aug 11, 2015
- Texas Instruments Incorporated
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature implant scheme to improve BJT current gain
- Patent number 8,772,103
- Issue date Jul 8, 2014
- Texas Instruments Incorporated
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fluorine implant under isolation dielectric structures to improve b...
- Patent number 8,609,501
- Issue date Dec 17, 2013
- Texas Instruments Incorporated
- Weidong Tian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ESD diode with PSD partially overlying P-Epi circumferential of PSD
- Patent number 8,455,950
- Issue date Jun 4, 2013
- Texas Instruments Incorporated
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a dual metal Schottky diode
- Patent number 7,902,055
- Issue date Mar 8, 2011
- Texas Instruments Incoprorated
- Richard B. Irwin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Collector tailored structures for integration of binary junction tr...
- Patent number 7,462,546
- Issue date Dec 9, 2008
- Texas Instruments Incorporated
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal Schottky diode
- Patent number 6,972,470
- Issue date Dec 6, 2005
- Texas Instruments Incorporated
- Richard B. Irwin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode having a double implanted guard ring
- Patent number 6,894,318
- Issue date May 17, 2005
- Texas Instruments Incorporated
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
BIRD'S BEAK PROFILE OF FIELD OXIDE REGION
- Publication number 20230253495
- Publication date Aug 10, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Jingjing Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR WITH MERGED DRIFT REGION
- Publication number 20230246033
- Publication date Aug 3, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION OF SEMICONDUCTOR DEVICE
- Publication number 20230246106
- Publication date Aug 3, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD PLATING AT SOURCE SIDE OF GATE BIAS MOSFETS TO PREVENT VT SHIFT
- Publication number 20230231020
- Publication date Jul 20, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR SEMICONDUCTOR DEVICE AND METHOD OF FORM...
- Publication number 20230178372
- Publication date Jun 8, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Bhaskar Srinivasan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTIVE SOURCE/BACKGATE finFET
- Publication number 20230091260
- Publication date Mar 23, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR WITH FIELD PLATING
- Publication number 20230085365
- Publication date Mar 16, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR (FINFET) WITH A HIGH-K MATERIAL FIELD-P...
- Publication number 20230067590
- Publication date Mar 2, 2023
- TEXAS INSTRUMENTS INCORPORATED
- MING-YEH CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIFORM IMPLANT REGIONS IN A SEMICONDUCTOR RIDGE OF A FINFET
- Publication number 20220393021
- Publication date Dec 8, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR WITH MERGED DRIFT REGION
- Publication number 20220173101
- Publication date Jun 2, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPLANT BLOCKING FOR A TRENCH OR FINFET WITHOUT AN ADDITIONAL MASK
- Publication number 20220123130
- Publication date Apr 21, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIFORM IMPLANT REGIONS IN A SEMICONDUCTOR RIDGE OF A FINFET
- Publication number 20220123129
- Publication date Apr 21, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR WITH FIELD PLATING
- Publication number 20220005948
- Publication date Jan 6, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH LATERAL CHARGE BALANCE AT THE DRAIN DRIFT REGION
- Publication number 20210391460
- Publication date Dec 16, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH FIELD PLATE OVER TAPERED TRENCH ISOLATION
- Publication number 20210367044
- Publication date Nov 25, 2021
- TEXAS INSTRUMENTS INCORPORATED
- MING-YEH CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH FIELD PLATE OVER TAPERED TRENCH ISOLATION
- Publication number 20200258987
- Publication date Aug 13, 2020
- TEXAS INSTRUMENTS INCORPORATED
- MING-YEH CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS Transistor with Segmented Gate Dielectric Layer
- Publication number 20190165168
- Publication date May 30, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Sameer Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH ISOLATED IC WITH TRANSISTORS HAVING LOCOS GATE DIELECTRIC
- Publication number 20180308745
- Publication date Oct 25, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH ISOLATED IC WITH TRANSISTORS HAVING LOCOS GATE DIELECTRIC
- Publication number 20180174887
- Publication date Jun 21, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS Transistor with Segmented Gate Dielectric Layer
- Publication number 20180175191
- Publication date Jun 21, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Sameer Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODES WITH A DOG BONE OR CAP-SHAPED JUNCTION PROFILE TO ENHANCE ES...
- Publication number 20130244411
- Publication date Sep 19, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fluorine Implant Under Isolation Dielectric Structures to Improve B...
- Publication number 20130065374
- Publication date Mar 14, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Weidong Tian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Temperature Implant Scheme to Improve BJT Current Gain
- Publication number 20120100680
- Publication date Apr 26, 2012
- TEXAS INSTRUMENTS INCORPORATED
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODES WITH A DOG BONE OR CAP-SHAPED JUNCTION PROFILE TO ENHANCE E...
- Publication number 20110298092
- Publication date Dec 8, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEDICINE INJECTION INTO SKIN WITH HEATER CHIP
- Publication number 20110092898
- Publication date Apr 21, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Ming Yeh CHUANG
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Application
Collector tailored structures for integration of binary junction tr...
- Publication number 20070249135
- Publication date Oct 25, 2007
- TEXAS INSTRUMENTS INCORPORATED
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual metal schottky diode
- Publication number 20050218433
- Publication date Oct 6, 2005
- Richard B. Irwin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual metal schottky diode
- Publication number 20050221571
- Publication date Oct 6, 2005
- Richard B. Irwin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diode having a double implanted guard ring
- Publication number 20050040489
- Publication date Feb 24, 2005
- Texas Instruments, Incorporated
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS

Ming-Yeh Chuang

Person

Patents Grantslast 30 patents

Uniform implant regions in a semiconductor ridge of a FinfET

Fin field effect transistor with field plating

finFET with lateral charge balance at the drain drift region

Fin field effect transistor with merged drift region

Fin field effect transistor with field plating

Uniform implant regions in a semiconductor ridge of a FinFET

FinFET with lateral charge balance at the drain drift region

Transistor with field plate over tapered trench isolation

LDMOS transistor with gate structure having alternating regions of...

Trench isolated IC with transistors having LOCOS gate dielectric

LDMOS transistor with segmented gate dielectric layer

Trench isolated IC with transistors having locos gate dielectric

Laterally diffused metal oxide semiconductor with segmented gate oxide

Making ESD diode with P-S/D overlying N-well and P-EPI portion

Low temperature implant scheme to improve BJT current gain

Fluorine implant under isolation dielectric structures to improve b...

ESD diode with PSD partially overlying P-Epi circumferential of PSD

Method of manufacturing a dual metal Schottky diode

Collector tailored structures for integration of binary junction tr...

Dual metal Schottky diode

Diode having a double implanted guard ring

Patents Applicationslast 30 patents

BIRD'S BEAK PROFILE OF FIELD OXIDE REGION

FIN FIELD EFFECT TRANSISTOR WITH MERGED DRIFT REGION

ISOLATION OF SEMICONDUCTOR DEVICE

FIELD PLATING AT SOURCE SIDE OF GATE BIAS MOSFETS TO PREVENT VT SHIFT

FIN FIELD-EFFECT TRANSISTOR SEMICONDUCTOR DEVICE AND METHOD OF FORM...

LOW RESISTIVE SOURCE/BACKGATE finFET

FIN FIELD EFFECT TRANSISTOR WITH FIELD PLATING

FIN FIELD-EFFECT TRANSISTOR (FINFET) WITH A HIGH-K MATERIAL FIELD-P...

UNIFORM IMPLANT REGIONS IN A SEMICONDUCTOR RIDGE OF A FINFET

FIN FIELD EFFECT TRANSISTOR WITH MERGED DRIFT REGION

IMPLANT BLOCKING FOR A TRENCH OR FINFET WITHOUT AN ADDITIONAL MASK

UNIFORM IMPLANT REGIONS IN A SEMICONDUCTOR RIDGE OF A FINFET

FIN FIELD EFFECT TRANSISTOR WITH FIELD PLATING

FINFET WITH LATERAL CHARGE BALANCE AT THE DRAIN DRIFT REGION

TRANSISTOR WITH FIELD PLATE OVER TAPERED TRENCH ISOLATION

TRANSISTOR WITH FIELD PLATE OVER TAPERED TRENCH ISOLATION

LDMOS Transistor with Segmented Gate Dielectric Layer

TRENCH ISOLATED IC WITH TRANSISTORS HAVING LOCOS GATE DIELECTRIC

TRENCH ISOLATED IC WITH TRANSISTORS HAVING LOCOS GATE DIELECTRIC

LDMOS Transistor with Segmented Gate Dielectric Layer

DIODES WITH A DOG BONE OR CAP-SHAPED JUNCTION PROFILE TO ENHANCE ES...

Fluorine Implant Under Isolation Dielectric Structures to Improve B...

Low Temperature Implant Scheme to Improve BJT Current Gain

DIODES WITH A DOG BONE OR CAP-SHAPED JUNCTION PROFILE TO ENHANCE E...

MEDICINE INJECTION INTO SKIN WITH HEATER CHIP

Collector tailored structures for integration of binary junction tr...

Dual metal schottky diode

Dual metal schottky diode

Diode having a double implanted guard ring