Mitsuasa Takahashi

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Thin film semiconductor device and method for manufacturing same
- Patent number 7,109,554
- Issue date Sep 19, 2006
- NEC Corporation
- Mitsuasa Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-film semiconductor device and liquid crystal display
- Patent number 7,023,015
- Issue date Apr 4, 2006
- NEC Corporation
- Naoki Matsunaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film semiconductor device and method for manufacturing same
- Patent number 6,972,221
- Issue date Dec 6, 2005
- NEC Corporation
- Mitsuasa Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage level shift circuit including CMOS transistor having t...
- Patent number 5,852,366
- Issue date Dec 22, 1998
- NEC Corporation
- Mitsuasa Takahashi
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Temperature detection method and circuit using MOSFET
- Patent number 5,796,290
- Issue date Aug 18, 1998
- NEC Corporation
- Mitsuasa Takahashi
- G01 - MEASURING TESTING
Information Patent Grant
Power mosfet having current detection means
- Patent number 5,767,545
- Issue date Jun 16, 1998
- NEC Corporation
- Mitsuasa Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having improved reverse recovery voltage
- Patent number 5,686,750
- Issue date Nov 11, 1997
- Koshiba & Partners
- Mitsuasa Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage mosfet with an improved channel stopper structure
- Patent number 5,641,982
- Issue date Jun 24, 1997
- NEC Corporation
- Mitsuasa Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an increased withstand voltage against...
- Patent number 5,635,743
- Issue date Jun 3, 1997
- NEC Corporation
- Mitsuasa Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power MOSFET structure having reduced cell area
- Patent number 5,366,914
- Issue date Nov 22, 1994
- NEC Corporation
- Nobumitsu Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor with diffused protection diode
- Patent number 5,313,088
- Issue date May 17, 1994
- NEC Corporation
- Nobumitsu Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power field effect transistor having base region inwardly...
- Patent number 5,304,832
- Issue date Apr 19, 1994
- NEC Corporation
- Mitsuasa Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 5,237,194
- Issue date Aug 17, 1993
- NEC Corporation
- Mitsuasa Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power MOSFET having high withstand voltage and high switch...
- Patent number 5,016,066
- Issue date May 14, 1991
- NEC Corporation
- Mitsuasa Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical MOS field effect transistor having a high withstand voltag...
- Patent number 4,965,647
- Issue date Oct 23, 1990
- NEC Corporation
- Mitsuasa Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET having a current sensing element of high accuracy
- Patent number 4,908,682
- Issue date Mar 13, 1990
- NEC Corporation
- Mitsuasa Takahashi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Thin film semiconductor device and method for manufacturing same
- Publication number 20060261339
- Publication date Nov 23, 2006
- NEC Corporation
- Mitsuasa Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin film semiconductor device and method for manufacturing same
- Publication number 20050045883
- Publication date Mar 3, 2005
- NEC Corporation
- Mitsuasa Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin-film semiconductor device and liquid crystal display
- Publication number 20040063253
- Publication date Apr 1, 2004
- NEC Corporation
- Naoki Matsunaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin film semiconductor device and method for manufacturing same
- Publication number 20030170938
- Publication date Sep 11, 2003
- NEC Corporation
- Mitsuasa Takahashi
- H01 - BASIC ELECTRIC ELEMENTS

Mitsuasa Takahashi

Person

Patents Grantslast 30 patents

Thin film semiconductor device and method for manufacturing same

Thin-film semiconductor device and liquid crystal display

Thin film semiconductor device and method for manufacturing same

High voltage level shift circuit including CMOS transistor having t...

Temperature detection method and circuit using MOSFET

Power mosfet having current detection means

Power semiconductor device having improved reverse recovery voltage

High voltage mosfet with an improved channel stopper structure

Semiconductor device having an increased withstand voltage against...

Vertical power MOSFET structure having reduced cell area

Vertical field effect transistor with diffused protection diode

Vertical power field effect transistor having base region inwardly...

Power semiconductor device

Vertical power MOSFET having high withstand voltage and high switch...

Vertical MOS field effect transistor having a high withstand voltag...

Power MOSFET having a current sensing element of high accuracy

Patents Applicationslast 30 patents

Thin film semiconductor device and method for manufacturing same

Thin film semiconductor device and method for manufacturing same

Thin-film semiconductor device and liquid crystal display

Thin film semiconductor device and method for manufacturing same