Mitsutoshi Koyama

Person

Yokkaichi-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of making a semiconductor device having a multilayer metal f...
- Patent number 6,812,136
- Issue date Nov 2, 2004
- Kabushiki Kaisha Toshiba
- Mitsutoshi Koyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with pure copper wirings and method of manufac...
- Patent number 6,424,045
- Issue date Jul 23, 2002
- Kabushiki Kaisha Toshiba
- Mitsutoshi Koyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with pure copper wirings and method of manufac...
- Patent number 5,990,008
- Issue date Nov 23, 1999
- Kabushiki Kaisha Toshiba
- Mitsutoshi Koyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing annealed films
- Patent number 5,589,421
- Issue date Dec 31, 1996
- Kabushiki Kaisha Toshiba
- Naoto Miyashita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of treating semiconductor substrates
- Patent number 5,380,399
- Issue date Jan 10, 1995
- Kabushiki Kaisha Toshiba
- Naoto Miyashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High dielectric capacitor having low current leakage
- Patent number 5,189,503
- Issue date Feb 23, 1993
- Kabushiki Kaisha Toshiba
- Kyoichi Suguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical heat-treatment apparatus for semiconductor parts
- Patent number 5,127,365
- Issue date Jul 7, 1992
- Kabushiki Kaisha Toshiba
- Mitsutoshi Koyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having element regions electrically isolated f...
- Patent number 5,111,272
- Issue date May 5, 1992
- Kabushiki Kaisha Toshiba
- Naoto Miyashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sputtering target supporting device
- Patent number 4,485,000
- Issue date Nov 27, 1984
- Kabushiki Kaisha Toshiba
- Tatsuzo Kawaguchi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE WITH PURE COPPER WIRINGS AND METHOD OF MANUFAC...
- Publication number 20010035583
- Publication date Nov 1, 2001
- MITSUTOSHI KOYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a wiring layer of copper
- Publication number 20010010401
- Publication date Aug 2, 2001
- Kabushiki Kaisha Toshiba
- Mitsutoshi Koyama
- H01 - BASIC ELECTRIC ELEMENTS

Mitsutoshi Koyama

Person

Patents Grantslast 30 patents

Method of making a semiconductor device having a multilayer metal f...

Semiconductor device with pure copper wirings and method of manufac...

Semiconductor device with pure copper wirings and method of manufac...

Method of manufacturing annealed films

Method of treating semiconductor substrates

High dielectric capacitor having low current leakage

Vertical heat-treatment apparatus for semiconductor parts

Semiconductor device having element regions electrically isolated f...

Sputtering target supporting device

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE WITH PURE COPPER WIRINGS AND METHOD OF MANUFAC...

Semiconductor device having a wiring layer of copper