Miyai Yoichi

Person

Toride, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming cross point type DRAM cell
- Patent number 6,797,563
- Issue date Sep 28, 2004
- Texas Instruments Incorporated
- Yoichi Miyai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a self-aligned contact
- Patent number 6,657,308
- Issue date Dec 2, 2003
- Texas Instruments Incorporated
- Yoichi Miyai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating an open can-type stacked capacitor on an une...
- Patent number 6,580,112
- Issue date Jun 17, 2003
- Texas Instruments Incorporated
- Yoichi Miyai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross point type DRAM cell composed of a pillar having an active re...
- Patent number 6,563,155
- Issue date May 13, 2003
- Texas Instruments Incorporated
- Yoichi Miyai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of repairing semiconductor memory, electron-beam memory repa...
- Patent number 6,434,063
- Issue date Aug 13, 2002
- Advantest Corporation
- Naoki Nishio
- G11 - INFORMATION STORAGE
Information Patent Grant
Minimization-feasible word line structure for DRAM cell
- Patent number 6,362,506
- Issue date Mar 26, 2002
- Texas Instruments Incorporated
- Yoichi Miyai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating an open can-type stacked capacitor on an une...
- Patent number 6,291,293
- Issue date Sep 18, 2001
- Texas Instruments Incorporated
- Yoichi Miyai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system of interconnecting conductive elements in an inte...
- Patent number 6,245,664
- Issue date Jun 12, 2001
- Texas Instruments Incorporated
- Yoichi Miyai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabrication an open can-type stacked capacitor on local...
- Patent number 6,204,118
- Issue date Mar 20, 2001
- Texas Instruments Incorporated
- Yoichi Miyai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of the simultaneous formation for the storage node contacts,...
- Patent number 6,184,080
- Issue date Feb 6, 2001
- Texas Instruments Incorporated
- Yoichi Miyai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a self-aligned contact
- Patent number 6,004,870
- Issue date Dec 21, 1999
- Texas Instruments Incorporated
- Yoichi Miyai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of repairing semiconductor memory, electron-beam memory repa...
- Patent number 5,985,677
- Issue date Nov 16, 1999
- Advantest Corporation
- Naoki Nishio
- G11 - INFORMATION STORAGE
Information Patent Grant
Trench-type semiconductor memory device
- Patent number 5,861,649
- Issue date Jan 19, 1999
- Texas Instruments Incorporated
- Hiroyuki Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for estimating chip yield
- Patent number 5,754,432
- Issue date May 19, 1998
- Texas Instruments Incorporated
- Takao Komatsuzaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM COB bit line and moat arrangement
- Patent number 5,734,184
- Issue date Mar 31, 1998
- Texas Instruments Incorporated
- Katsuyoshi Andoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device with laser programabl...
- Patent number 5,641,701
- Issue date Jun 24, 1997
- Texas Instruments Incorporated
- Hideyuki Fukuhara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 5,635,740
- Issue date Jun 3, 1997
- Texas Instruments Incorporated
- Nagata Toshiyuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making fuse with non-corrosive termination of corrosive f...
- Patent number 5,618,750
- Issue date Apr 8, 1997
- Texas Instruments Incorporated
- Hideyuki Fukuhara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for concurrently forming holes for interconnection between d...
- Patent number 5,610,100
- Issue date Mar 11, 1997
- Texas Instruments Inc.
- Hiroyuki Kurino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-step sinter method utilized in conjunction with memory cell rep...
- Patent number 5,514,628
- Issue date May 7, 1996
- Texas Instruments Incorporated
- Osaomi Enomoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 5,470,778
- Issue date Nov 28, 1995
- Texas Instruments Incorporated
- Toshiyuki Nagata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 5,317,177
- Issue date May 31, 1994
- Texas Instruments Incorporated
- Toshiyuki Nagata
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method of forming cross point type DRAM cell
- Publication number 20030132456
- Publication date Jul 17, 2003
- Yoichi Miyai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS POINT TYPE DRAM CELL COMPOSED OF A PILLAR HAVING AN ACTIVE RE...
- Publication number 20030062555
- Publication date Apr 3, 2003
- Yoichi Miyai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Redundancy memory circuit
- Publication number 20020173055
- Publication date Nov 21, 2002
- Naoki Nishio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacture thereof
- Publication number 20010044199
- Publication date Nov 22, 2001
- Texas Instruments Inc.
- Yoichi Miyai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating an open can-type stacked capacitor on an une...
- Publication number 20010031530
- Publication date Oct 18, 2001
- Yoichi Miyai
- H01 - BASIC ELECTRIC ELEMENTS

Miyai Yoichi

Person

Patents Grantslast 30 patents

Method of forming cross point type DRAM cell

Method for forming a self-aligned contact

Method for fabricating an open can-type stacked capacitor on an une...

Cross point type DRAM cell composed of a pillar having an active re...

Method of repairing semiconductor memory, electron-beam memory repa...

Minimization-feasible word line structure for DRAM cell

Method for fabricating an open can-type stacked capacitor on an une...

Method and system of interconnecting conductive elements in an inte...

Method for fabrication an open can-type stacked capacitor on local...

Method of the simultaneous formation for the storage node contacts,...

Method for forming a self-aligned contact

Method of repairing semiconductor memory, electron-beam memory repa...

Trench-type semiconductor memory device

Apparatus and method for estimating chip yield

DRAM COB bit line and moat arrangement

Method for fabricating a semiconductor device with laser programabl...

Semiconductor device and method of manufacturing the same

Method of making fuse with non-corrosive termination of corrosive f...

Method for concurrently forming holes for interconnection between d...

Two-step sinter method utilized in conjunction with memory cell rep...

Method of manufacturing a semiconductor device

Semiconductor device and method of manufacturing the same

Patents Applicationslast 30 patents

Method of forming cross point type DRAM cell

CROSS POINT TYPE DRAM CELL COMPOSED OF A PILLAR HAVING AN ACTIVE RE...

Redundancy memory circuit

Semiconductor device and manufacture thereof

Method for fabricating an open can-type stacked capacitor on an une...