Mohamad KROUNBI

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method and system for providing magnetic junctions utilizing oxygen...
- Patent number 11,063,209
- Issue date Jul 13, 2021
- Samsung Electronics Co., Ltd.
- Xueti Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid oxide/metal cap layer for boron-free free layer
- Patent number 11,009,570
- Issue date May 18, 2021
- Samsung Electronics Co., Ltd.
- Xueti Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for providing magnetic junctions utilizing metal...
- Patent number 10,553,642
- Issue date Feb 4, 2020
- Samsung Electronics Co., Ltd.
- Don Koun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for providing magnetic tunneling junction element...
- Patent number 10,446,209
- Issue date Oct 15, 2019
- Samsung Semiconductor Inc.
- Steven M. Watts
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method and system for providing a magnetic layer in a magnetic junc...
- Patent number 10,438,638
- Issue date Oct 8, 2019
- Samsung Electronics Co., Ltd.
- Xueti Tang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and system for providing magnetic junctions utilizing high c...
- Patent number 10,297,301
- Issue date May 21, 2019
- Samsung Electronics Co., Ltd.
- Don Koun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for providing a boron-free magnetic layer in perp...
- Patent number 10,283,701
- Issue date May 7, 2019
- Samsung Electronics Co., Ltd.
- Xueti Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for providing a magnetic junction usable in spin...
- Patent number 10,276,225
- Issue date Apr 30, 2019
- Samsung Electronics Co., Ltd.
- Xueti Tang
- G11 - INFORMATION STORAGE
Information Patent Grant
Hybrid-fl with edge-modified coupling
- Patent number 10,170,690
- Issue date Jan 1, 2019
- Samsung Electronics Co., Ltd.
- Dmytro Apalkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for providing a magnetic junction usable in spin...
- Patent number 10,164,175
- Issue date Dec 25, 2018
- Samsung Electronics Co., Ltd.
- Mohamad Towfik Krounbi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DMTJ structure for sub-25NM designs with cancelled flowering field...
- Patent number 10,062,732
- Issue date Aug 28, 2018
- Samsung Electronics Co., Ltd.
- Dmytro Apalkov
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and system for providing magnetic junctions utilizing high c...
- Patent number 9,972,773
- Issue date May 15, 2018
- Samsung Electronics Co., Ltd.
- Don Koun Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and system for providing a magnetic layer in a magnetic junc...
- Patent number 9,966,528
- Issue date May 8, 2018
- Samsung Electronics Co., Ltd.
- Xueti Tang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and system for providing a low moment CoFeBMo free layer mag...
- Patent number 9,941,467
- Issue date Apr 10, 2018
- Samsung Electronics Co., Ltd.
- Xueti Tang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and system for providing a magnetic junction usable in spin...
- Patent number 9,917,249
- Issue date Mar 13, 2018
- Samsung Electronics Co., Ltd.
- Xueti Tang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and system for providing a low moment free layer magnetic ju...
- Patent number 9,876,164
- Issue date Jan 23, 2018
- Samsung Electronics Co., Ltd.
- Xueti Tang
- G11 - INFORMATION STORAGE
Information Patent Grant
Quantum computing device spin transfer torque magnetic memory
- Patent number 9,460,397
- Issue date Oct 4, 2016
- Samsung Electronics Co., Ltd.
- Dmytro Apalkov
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and system for providing multiple self-aligned logic cells i...
- Patent number 9,236,561
- Issue date Jan 12, 2016
- Samsung Electronics Co., Ltd.
- Mohamad Towfik Krounbi
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and system for providing a magnetic junction configured for...
- Patent number 9,142,758
- Issue date Sep 22, 2015
- Samsung Electronics Co., Ltd.
- Dmytro Apalkov
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and system for providing magnetic junctions having improved...
- Patent number 9,129,690
- Issue date Sep 8, 2015
- Samsung Electronics Co., Ltd.
- Chang-Man Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic junctions having insertion layers and magnetic memories us...
- Patent number 9,130,155
- Issue date Sep 8, 2015
- Samsung Electronics Co., Ltd.
- Roman Chepulskyy
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and system for providing dual magnetic tunneling junctions u...
- Patent number 9,105,830
- Issue date Aug 11, 2015
- Samsung Electronics Co., Ltd.
- Alexey Vasilyevitch Khvalkovskiy
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic device having a magnetic material in a contact structure c...
- Patent number 9,087,633
- Issue date Jul 21, 2015
- Samsung Electronics Co., Ltd.
- Alexey Vasilyevitch Khvalkovskiy
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and system for providing magnetic memories switchable using...
- Patent number 9,076,954
- Issue date Jul 7, 2015
- Samsung Electronics Co., Ltd.
- Alexey Vasilyevitch Khvalkovskiy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for providing a magnetic junction having an engin...
- Patent number 8,987,006
- Issue date Mar 24, 2015
- Samsung Electronics Co., Ltd.
- Kiseok Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage assisted STT-MRAM writing scheme
- Patent number 8,908,428
- Issue date Dec 9, 2014
- Samsung Electronics Co., Ltd.
- Adrian E. Ong
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and system for providing magnetic junctions having a graded...
- Patent number 8,890,267
- Issue date Nov 18, 2014
- Samsung Electronics Co., Ltd.
- Dmytro Apalkov
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and system for providing a magnetic junction using half meta...
- Patent number 8,766,383
- Issue date Jul 1, 2014
- Samsung Electronics Co., Ltd.
- Dmytro Apalkov
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and system for setting a pinned layer in a magnetic tunnelin...
- Patent number 8,697,484
- Issue date Apr 15, 2014
- Samsung Electronics Co., Ltd.
- Dmytro Apalkov
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and system for providing a magnetic tunneling junction using...
- Patent number 8,698,259
- Issue date Apr 15, 2014
- Samsung Electronics Co., Ltd.
- Mohamad Towfik Krounbi
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
HYBRID OXIDE/METAL CAP LAYER FOR BORON-FREE FREE LAYER
- Publication number 20200158796
- Publication date May 21, 2020
- Samsung Electronics Co., Ltd.
- Xueti Tang
- G01 - MEASURING TESTING
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING A BORON-FREE MAGNETIC LAYER IN PERP...
- Publication number 20190157547
- Publication date May 23, 2019
- Samsung Electronics Co., Ltd.
- Xueti Tang
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS UTILIZING HIGH C...
- Publication number 20190066747
- Publication date Feb 28, 2019
- Samsung Electronics Co., Ltd.
- Don Koun Lee
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS UTILIZING METAL...
- Publication number 20190067366
- Publication date Feb 28, 2019
- Samsung Electronics Co., Ltd.
- Don Koun Lee
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS UTILIZING OXYGEN...
- Publication number 20180351086
- Publication date Dec 6, 2018
- Samsung Electronics Co., Ltd.
- Xueti Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING A MAGNETIC LAYER IN A MAGNETIC JUNC...
- Publication number 20180247684
- Publication date Aug 30, 2018
- Samsung Electronics Co., Ltd.
- Xueti Tang
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING A MAGNETIC JUNCTION USABLE IN SPIN...
- Publication number 20180197589
- Publication date Jul 12, 2018
- Samsung Electronics Co., Ltd.
- Xueti Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING A LOW MOMENT CoFeBMo FREE LAYER MAG...
- Publication number 20180102474
- Publication date Apr 12, 2018
- Samsung Electronics Co., Ltd.
- Xueti Tang
- G11 - INFORMATION STORAGE
Information Patent Application
DMTJ STRUCTURE FOR SUB-25NM DESIGNS WITH CANCELLED FLOWERING FIELD...
- Publication number 20170345868
- Publication date Nov 30, 2017
- Samsung Electronics Co., Ltd.
- Dmytro APALKOV
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING A MAGNETIC JUNCTION USABLE IN SPIN...
- Publication number 20170263859
- Publication date Sep 14, 2017
- Samsung Electronics Co., Ltd.
- Xueti Tang
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING A MAGNETIC LAYER IN A MAGNETIC JUNC...
- Publication number 20170256702
- Publication date Sep 7, 2017
- Samsung Electronics Co., Ltd.
- Xueti Tang
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING A MAGNETIC JUNCTION USABLE IN SPIN...
- Publication number 20170256708
- Publication date Sep 7, 2017
- Samsung Electronics Co., Ltd.
- Mohamad Towfik Krounbi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID-FL WITH EDGE-MODIFIED COUPLING
- Publication number 20170141297
- Publication date May 18, 2017
- Samsung Electronics Co., Ltd.
- Dmytro APALKOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING MULTIPLE SELF-ALIGNED LOGIC CELLS I...
- Publication number 20150200357
- Publication date Jul 16, 2015
- Mohamad Towfik Krounbi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
QUANTUM COMPUTING DEVICE SPIN TRANSFER TORQUE MAGNETIC MEMORY
- Publication number 20150097159
- Publication date Apr 9, 2015
- Samsung Electronics Co., Ltd.
- Dmytro Apalkov
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS USING BCC COBALT...
- Publication number 20150041933
- Publication date Feb 12, 2015
- Samsung Electronics Co., Ltd.
- Roman Chepulskyy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING MAGNETIC MEMORIES SWITCHABLE USING...
- Publication number 20150041934
- Publication date Feb 12, 2015
- Samsung Electronics Co., Ltd.
- Alexey Vasilyevitch Khvalkovskiy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC JUNCTIONS HAVING INSERTION LAYERS AND MAGNETIC MEMORIES US...
- Publication number 20140264671
- Publication date Sep 18, 2014
- Samsung Electronics Co., Ltd.
- Roman Chepulskyy
- G11 - INFORMATION STORAGE
Information Patent Application
VOLTAGE ASSISTED STT-MRAM WRITING SCHEME
- Publication number 20140211557
- Publication date Jul 31, 2014
- Adrian E. Ong
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS HAVING A GRADED...
- Publication number 20140151830
- Publication date Jun 5, 2014
- Dmytro Apalkov
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING DUAL MAGNETIC TUNNELING JUNCTIONS U...
- Publication number 20140056061
- Publication date Feb 27, 2014
- Alexey Vasilyevitch Khvalkovskiy
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS HAVING IMPROVED...
- Publication number 20140022839
- Publication date Jan 23, 2014
- Chang-Man Park
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC DEVICE HAVING A MAGNETIC MATERIAL IN A CONTACT STRUCTURE C...
- Publication number 20130161768
- Publication date Jun 27, 2013
- Samsung Electronics Co., Ltd.
- Alexey Vasilyevitch Khvalkovskiy
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING A MAGNETIC TUNNELING JUNCTION USING...
- Publication number 20130154035
- Publication date Jun 20, 2013
- Samsung Electronics Co., Ltd.
- Mohamad Towfik Krounbi
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND SYSTEM FOR SETTING A PINNED LAYER IN A MAGNETIC TUNNELIN...
- Publication number 20130154034
- Publication date Jun 20, 2013
- Samsung Electronics Co., Ltd.
- Dmytro Apalkov
- G11 - INFORMATION STORAGE
Information Patent Application
Method And System For Providing A Magnetic Junction Using Half Meta...
- Publication number 20130009260
- Publication date Jan 10, 2013
- Dmytro Apalkov
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING A MAGNETIC JUNCTION CONFIGURED FOR...
- Publication number 20120319221
- Publication date Dec 20, 2012
- Dmytro Apalkov
- G11 - INFORMATION STORAGE
Information Patent Application
Method And System For Providing A Magnetic Junction Having An Engin...
- Publication number 20120267736
- Publication date Oct 25, 2012
- Kiseok Moon
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTION ELEMENT...
- Publication number 20120155156
- Publication date Jun 21, 2012
- GRANDIS, INC.
- Steven M. Watts
- G01 - MEASURING TESTING
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING HYBRID MAGNETIC TUNNELING JUNCTION...
- Publication number 20120112295
- Publication date May 10, 2012
- GRANDIS, INC.
- Dmytro Apalkov
- G11 - INFORMATION STORAGE

Mohamad KROUNBI

Person

Patents Grantslast 30 patents

Method and system for providing magnetic junctions utilizing oxygen...

Hybrid oxide/metal cap layer for boron-free free layer

Method and system for providing magnetic junctions utilizing metal...

Method and system for providing magnetic tunneling junction element...

Method and system for providing a magnetic layer in a magnetic junc...

Method and system for providing magnetic junctions utilizing high c...

Method and system for providing a boron-free magnetic layer in perp...

Method and system for providing a magnetic junction usable in spin...

Hybrid-fl with edge-modified coupling

Method and system for providing a magnetic junction usable in spin...

DMTJ structure for sub-25NM designs with cancelled flowering field...

Method and system for providing magnetic junctions utilizing high c...

Method and system for providing a magnetic layer in a magnetic junc...

Method and system for providing a low moment CoFeBMo free layer mag...

Method and system for providing a magnetic junction usable in spin...

Method and system for providing a low moment free layer magnetic ju...

Quantum computing device spin transfer torque magnetic memory

Method and system for providing multiple self-aligned logic cells i...

Method and system for providing a magnetic junction configured for...

Method and system for providing magnetic junctions having improved...

Magnetic junctions having insertion layers and magnetic memories us...

Method and system for providing dual magnetic tunneling junctions u...

Magnetic device having a magnetic material in a contact structure c...

Method and system for providing magnetic memories switchable using...

Method and system for providing a magnetic junction having an engin...

Voltage assisted STT-MRAM writing scheme

Method and system for providing magnetic junctions having a graded...

Method and system for providing a magnetic junction using half meta...

Method and system for setting a pinned layer in a magnetic tunnelin...

Method and system for providing a magnetic tunneling junction using...

Patents Applicationslast 30 patents

HYBRID OXIDE/METAL CAP LAYER FOR BORON-FREE FREE LAYER

METHOD AND SYSTEM FOR PROVIDING A BORON-FREE MAGNETIC LAYER IN PERP...

METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS UTILIZING HIGH C...

METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS UTILIZING METAL...

METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS UTILIZING OXYGEN...

METHOD AND SYSTEM FOR PROVIDING A MAGNETIC LAYER IN A MAGNETIC JUNC...

METHOD AND SYSTEM FOR PROVIDING A MAGNETIC JUNCTION USABLE IN SPIN...

METHOD AND SYSTEM FOR PROVIDING A LOW MOMENT CoFeBMo FREE LAYER MAG...

DMTJ STRUCTURE FOR SUB-25NM DESIGNS WITH CANCELLED FLOWERING FIELD...

METHOD AND SYSTEM FOR PROVIDING A MAGNETIC JUNCTION USABLE IN SPIN...

METHOD AND SYSTEM FOR PROVIDING A MAGNETIC LAYER IN A MAGNETIC JUNC...

METHOD AND SYSTEM FOR PROVIDING A MAGNETIC JUNCTION USABLE IN SPIN...

HYBRID-FL WITH EDGE-MODIFIED COUPLING

METHOD AND SYSTEM FOR PROVIDING MULTIPLE SELF-ALIGNED LOGIC CELLS I...

QUANTUM COMPUTING DEVICE SPIN TRANSFER TORQUE MAGNETIC MEMORY

METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS USING BCC COBALT...

METHOD AND SYSTEM FOR PROVIDING MAGNETIC MEMORIES SWITCHABLE USING...

MAGNETIC JUNCTIONS HAVING INSERTION LAYERS AND MAGNETIC MEMORIES US...

VOLTAGE ASSISTED STT-MRAM WRITING SCHEME

METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS HAVING A GRADED...

METHOD AND SYSTEM FOR PROVIDING DUAL MAGNETIC TUNNELING JUNCTIONS U...

METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS HAVING IMPROVED...

MAGNETIC DEVICE HAVING A MAGNETIC MATERIAL IN A CONTACT STRUCTURE C...

METHOD AND SYSTEM FOR PROVIDING A MAGNETIC TUNNELING JUNCTION USING...

METHOD AND SYSTEM FOR SETTING A PINNED LAYER IN A MAGNETIC TUNNELIN...

Method And System For Providing A Magnetic Junction Using Half Meta...

METHOD AND SYSTEM FOR PROVIDING A MAGNETIC JUNCTION CONFIGURED FOR...

Method And System For Providing A Magnetic Junction Having An Engin...

METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTION ELEMENT...

METHOD AND SYSTEM FOR PROVIDING HYBRID MAGNETIC TUNNELING JUNCTION...