Mong-Song Liang

Person

Hsin-Chu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Strained isolation regions
- Patent number 9,564,488
- Issue date Feb 7, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mong-Song Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit metal gate structure having tapered profile
- Patent number 9,455,344
- Issue date Sep 27, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SRAM devices utilizing strained-channel transistors and methods of...
- Patent number 9,059,310
- Issue date Jun 16, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dishing-free gap-filling with multiple CMPs
- Patent number 8,932,951
- Issue date Jan 13, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Yuan Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layout methods of integrated circuits having unit MOS devices
- Patent number 8,803,202
- Issue date Aug 12, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process to make high-K transistor dielectrics
- Patent number 8,785,272
- Issue date Jul 22, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Liang-Gi Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit metal gate structure and method of fabrication
- Patent number 8,735,235
- Issue date May 27, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained isolation regions
- Patent number 8,736,016
- Issue date May 27, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mong-Song Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrating the formation of I/O and core MOS devices with MOS capa...
- Patent number 8,728,900
- Issue date May 20, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating same
- Patent number 8,716,103
- Issue date May 6, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung Long Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrating a first contact structure in a gate last process
- Patent number 8,669,153
- Issue date Mar 11, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chiung-Han Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SRAM devices utilizing strained-channel transistors and methods of...
- Patent number 8,624,295
- Issue date Jan 7, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Relaxed silicon germanium substrate with low defect density
- Patent number 8,564,018
- Issue date Oct 22, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun Chich Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained transistor with optimized drive current and method of forming
- Patent number 8,558,278
- Issue date Oct 15, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dishing-free gap-filling with multiple CMPs
- Patent number 8,552,522
- Issue date Oct 8, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Yuan Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid process for forming metal gates of MOS devices
- Patent number 8,536,660
- Issue date Sep 17, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating same
- Patent number 8,461,629
- Issue date Jun 11, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung Long Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer shape engineering for void-free gap-filling process
- Patent number 8,461,654
- Issue date Jun 11, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Yuan Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrating a first contact structure in a gate last process
- Patent number 8,394,692
- Issue date Mar 12, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chiung-Han Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing device performance drift caused by large spacings between...
- Patent number 8,368,170
- Issue date Feb 5, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrating a capacitor in a metal gate last process
- Patent number 8,368,136
- Issue date Feb 5, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Implanted metal silicide for semiconductor device
- Patent number 8,349,732
- Issue date Jan 8, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrating the formation of I/O and core MOS devices with MOS capa...
- Patent number 8,294,216
- Issue date Oct 23, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3-dimensional device design layout
- Patent number 8,286,114
- Issue date Oct 9, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS devices with partial stressor channel
- Patent number 8,274,071
- Issue date Sep 25, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Hua Yu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Layout methods of integrated circuits having unit MOS devices
- Patent number 8,237,201
- Issue date Aug 7, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low K dielectric surface damage control
- Patent number 8,148,270
- Issue date Apr 3, 2012
- Taiwan Semiconductor Manufactuiring Co., Ltd.
- Hun-Jan Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with local interconnects
- Patent number 8,138,554
- Issue date Mar 20, 2012
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Harry Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device layout for gate last process
- Patent number 8,125,051
- Issue date Feb 28, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing device performance drift caused by large spacings between...
- Patent number 8,115,271
- Issue date Feb 14, 2012
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Harry Chuang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT METAL GATE STRUCTURE HAVING TAPERED PROFILE
- Publication number 20140246712
- Publication date Sep 4, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained Isolation Regions
- Publication number 20140242776
- Publication date Aug 28, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mong-Song Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SRAM Devices Utilizing Strained-Channel Transistors and Methods of...
- Publication number 20140099758
- Publication date Apr 10, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dishing-Free Gap-Filling with Multiple CMPs
- Publication number 20140030888
- Publication date Jan 30, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Yuan Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Fabricating Same
- Publication number 20130316504
- Publication date Nov 28, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung Long Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrating a First Contact Structure in a Gate Last Process
- Publication number 20130196496
- Publication date Aug 1, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chiung-Han Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrating the Formation of I/O and Core MOS Devices with MOS Capa...
- Publication number 20130034946
- Publication date Feb 7, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Layout Methods of Integrated Circuits Having Unit MOS Devices
- Publication number 20120286368
- Publication date Nov 15, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reducing Device Performance Drift Caused by Large Spacings Between...
- Publication number 20120132987
- Publication date May 31, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATING A FIRST CONTACT STRUCTURE IN A GATE LAST PROCESS
- Publication number 20120045889
- Publication date Feb 23, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chiung-Han Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Spacer Shape Engineering for Void-Free Gap-Filling Process
- Publication number 20120025329
- Publication date Feb 2, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Yuah Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS TO MAKE HIGH-K TRANSISTOR DIELECTRICS
- Publication number 20110318915
- Publication date Dec 29, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Liang-Gi Yao
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Semiconductor Device and Method of Fabricating Same
- Publication number 20110260251
- Publication date Oct 27, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung Long Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reducing Device Performance Drift Caused by Large Spacings Between...
- Publication number 20110233682
- Publication date Sep 29, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dishing-Free Gap-Filling with Multiple CMPs
- Publication number 20110227189
- Publication date Sep 22, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Yuan Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS Devices with Partial Stressor Channel
- Publication number 20110101305
- Publication date May 5, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with both I/O and Core Components and Method o...
- Publication number 20110076813
- Publication date Mar 31, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung Long Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATING A FIRST CONTACT STRUCTURE IN A GATE LAST PROCESS
- Publication number 20100285658
- Publication date Nov 11, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chiung-Han Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW K DIELECTRIC SURFACE DAMAGE CONTROL
- Publication number 20100173499
- Publication date Jul 8, 2010
- Taiwan Semiconductor Manufacturing Co., LTD
- Hun-Jan Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FUSE STRUCTURE FOR INTERGRATED CIRCUIT DEVICES
- Publication number 20100117190
- Publication date May 13, 2010
- Harry CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STI STRESS MODULATION WITH ADDITIONAL IMPLANTATION AND NATURAL PAD...
- Publication number 20100075480
- Publication date Mar 25, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Han Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH LOCAL INTERCONNECTS
- Publication number 20100065921
- Publication date Mar 18, 2010
- Taiwan Semiconductor Manufacturing Co., LTD
- Harry CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATING A FIRST CONTACT STRUCTURE IN A GATE LAST PROCESS
- Publication number 20100052075
- Publication date Mar 4, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chiung-Han Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT METAL GATE STRUCTURE AND METHOD OF FABRICATION
- Publication number 20100044783
- Publication date Feb 25, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrating the Formation of I/O and Core MOS Devices with MOS Capa...
- Publication number 20100038692
- Publication date Feb 18, 2010
- Harry Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Spacer Shape Engineering for Void-Free Gap-Filling Process
- Publication number 20100022061
- Publication date Jan 28, 2010
- Ming-Yuan Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and a Method of Manufacture for Low Resistance NiSix
- Publication number 20100013029
- Publication date Jan 21, 2010
- Harry Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE LAYOUT FOR GATE LAST PROCESS
- Publication number 20100001369
- Publication date Jan 7, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATING A CAPACITOR IN A METAL GATE LAST PROCESS
- Publication number 20100001332
- Publication date Jan 7, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dishing-free gap-filling with multiple CMPs
- Publication number 20090286384
- Publication date Nov 19, 2009
- Ming-Yuan Wu
- H01 - BASIC ELECTRIC ELEMENTS

Mong-Song Liang

Person

Patents Grantslast 30 patents

Strained isolation regions

Integrated circuit metal gate structure having tapered profile

SRAM devices utilizing strained-channel transistors and methods of...

Dishing-free gap-filling with multiple CMPs

Layout methods of integrated circuits having unit MOS devices

Process to make high-K transistor dielectrics

Integrated circuit metal gate structure and method of fabrication

Strained isolation regions

Integrating the formation of I/O and core MOS devices with MOS capa...

Semiconductor device and method of fabricating same

Integrating a first contact structure in a gate last process

SRAM devices utilizing strained-channel transistors and methods of...

Relaxed silicon germanium substrate with low defect density

Strained transistor with optimized drive current and method of forming

Dishing-free gap-filling with multiple CMPs

Hybrid process for forming metal gates of MOS devices

Semiconductor device and method of fabricating same

Spacer shape engineering for void-free gap-filling process

Integrating a first contact structure in a gate last process

Reducing device performance drift caused by large spacings between...

Integrating a capacitor in a metal gate last process

Implanted metal silicide for semiconductor device

Integrating the formation of I/O and core MOS devices with MOS capa...

3-dimensional device design layout

MOS devices with partial stressor channel

Layout methods of integrated circuits having unit MOS devices

Low K dielectric surface damage control

Semiconductor device with local interconnects

Device layout for gate last process

Reducing device performance drift caused by large spacings between...

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT METAL GATE STRUCTURE HAVING TAPERED PROFILE

Strained Isolation Regions

SRAM Devices Utilizing Strained-Channel Transistors and Methods of...

Dishing-Free Gap-Filling with Multiple CMPs

Semiconductor Device and Method of Fabricating Same

Integrating a First Contact Structure in a Gate Last Process

Integrating the Formation of I/O and Core MOS Devices with MOS Capa...

Layout Methods of Integrated Circuits Having Unit MOS Devices

Reducing Device Performance Drift Caused by Large Spacings Between...

INTEGRATING A FIRST CONTACT STRUCTURE IN A GATE LAST PROCESS

Spacer Shape Engineering for Void-Free Gap-Filling Process

PROCESS TO MAKE HIGH-K TRANSISTOR DIELECTRICS

Semiconductor Device and Method of Fabricating Same

Reducing Device Performance Drift Caused by Large Spacings Between...

Dishing-Free Gap-Filling with Multiple CMPs

MOS Devices with Partial Stressor Channel

Semiconductor Device with both I/O and Core Components and Method o...

INTEGRATING A FIRST CONTACT STRUCTURE IN A GATE LAST PROCESS

LOW K DIELECTRIC SURFACE DAMAGE CONTROL

FUSE STRUCTURE FOR INTERGRATED CIRCUIT DEVICES

STI STRESS MODULATION WITH ADDITIONAL IMPLANTATION AND NATURAL PAD...

SEMICONDUCTOR DEVICE WITH LOCAL INTERCONNECTS

INTEGRATING A FIRST CONTACT STRUCTURE IN A GATE LAST PROCESS

INTEGRATED CIRCUIT METAL GATE STRUCTURE AND METHOD OF FABRICATION

Integrating the Formation of I/O and Core MOS Devices with MOS Capa...

Spacer Shape Engineering for Void-Free Gap-Filling Process

Structure and a Method of Manufacture for Low Resistance NiSix

DEVICE LAYOUT FOR GATE LAST PROCESS

INTEGRATING A CAPACITOR IN A METAL GATE LAST PROCESS

Dishing-free gap-filling with multiple CMPs