Morio Inoue

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Patents Grantslast 30 patents

Information Patent Grant
Method for growing semiconductor epitaxial layers
- Patent number 4,268,327
- Issue date May 19, 1981
- Matsushita Electric Industrial Co., Ltd.
- Tamotsu Uragaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Heterostructure semiconductor device having a top layer etched to f...
- Patent number 4,255,755
- Issue date Mar 10, 1981
- Matsushita Electric Industrial Co., Ltd.
- Kunio Itoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing semiconductor crystal
- Patent number 4,193,835
- Issue date Mar 18, 1980
- Matsushita Electric Industrial Co., Ltd.
- Morio Inoue
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of making a semiconductor light-emitting device utilizing lo...
- Patent number 4,188,244
- Issue date Feb 12, 1980
- Matsushita Electric Industrial Co., Ltd.
- Kunio Itoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solidstate light-emitting device
- Patent number 4,149,175
- Issue date Apr 10, 1979
- Matsushita Electric Industrial Co., Ltd.
- Morio Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser with light guide
- Patent number 4,144,503
- Issue date Mar 13, 1979
- Matsushita Electric Industrial Co., Ltd.
- Kunio Itoh
- H01 - BASIC ELECTRIC ELEMENTS