Moriya Miyashita

Person

Yokohama, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor wafer with ID mark, equipment for and method of manuf...
- Patent number 7,700,381
- Issue date Apr 20, 2010
- Kabushikia Kaisha Toshiba
- Tsunetoshi Arikado
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer with ID mark, equipment for and method of manuf...
- Patent number 7,057,259
- Issue date Jun 6, 2006
- Kabushiki Kaisha Toshiba
- Tsunetoshi Arikado
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate and method for producing the same
- Patent number 6,222,252
- Issue date Apr 24, 2001
- Kabushiki Kaisha Toshiba
- Masanori Numano
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing semiconductor device and methods of process...
- Patent number 6,037,270
- Issue date Mar 14, 2000
- Kabushiki Kaisha Toshiba
- Mokuji Kageyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor substrate and inspection meth...
- Patent number 5,951,755
- Issue date Sep 14, 1999
- Kabushiki Kaisha Toshiba
- Moriya Miyashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate, method of manufacturing semiconductor subs...
- Patent number 5,508,800
- Issue date Apr 16, 1996
- Kabushiki Kaisha Toshiba
- Moriya Miyashita
- G01 - MEASURING TESTING
Information Patent Grant
Method and apparatus for detecting defect on semiconductor substrat...
- Patent number 5,271,796
- Issue date Dec 21, 1993
- Kabushiki Kaisha Toshiba
- Moriya Miyashita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Wafer processsing method for manufacturing wafers having contaminan...
- Patent number 5,071,776
- Issue date Dec 10, 1991
- Kabushiki Kaisha Toshiba
- Yoshiaki Matsushita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gettering method for a semiconductor wafer
- Patent number 4,980,300
- Issue date Dec 25, 1990
- Kabushiki Kaisha Toshiba
- Moriya Miyashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gettering method for semiconductor wafers
- Patent number 4,971,920
- Issue date Nov 20, 1990
- Kabushiki Kaisha Toshiba
- Moriya Miyashita
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor wafer with ID mark, equipment for and method of manuf...
- Publication number 20060131696
- Publication date Jun 22, 2006
- Kabushiki Kaisha Toshiba
- Tsunetoshi Arikado
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor wafer with ID mark, equipment for and method of manuf...
- Publication number 20030003608
- Publication date Jan 2, 2003
- Tsunetoshi Arikado
- H01 - BASIC ELECTRIC ELEMENTS

Moriya Miyashita

Person

Patents Grantslast 30 patents

Semiconductor wafer with ID mark, equipment for and method of manuf...

Semiconductor wafer with ID mark, equipment for and method of manuf...

Semiconductor substrate and method for producing the same

Method of manufacturing semiconductor device and methods of process...

Manufacturing method of semiconductor substrate and inspection meth...

Semiconductor substrate, method of manufacturing semiconductor subs...

Method and apparatus for detecting defect on semiconductor substrat...

Wafer processsing method for manufacturing wafers having contaminan...

Gettering method for a semiconductor wafer

Gettering method for semiconductor wafers

Patents Applicationslast 30 patents

Semiconductor wafer with ID mark, equipment for and method of manuf...

Semiconductor wafer with ID mark, equipment for and method of manuf...