Morris S. Young

Person

fremont, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Low etch pit density 6 inch semi-insulating gallium arsenide wafers
- Patent number 12,084,790
- Issue date Sep 10, 2024
- AXT, Inc.
- Rajaram Shetty
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low etch pit density, low slip line density, and low strain indium...
- Patent number 12,054,851
- Issue date Aug 6, 2024
- AXT, Inc.
- Morris Young
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low etch pit density 6 inch semi-insulating gallium arsenide wafers
- Patent number 11,680,340
- Issue date Jun 20, 2023
- AXT, Inc.
- Rajaram Shetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low etch pit density, low slip line density, and low strain indium...
- Patent number 11,608,569
- Issue date Mar 21, 2023
- AXT, Inc.
- Morris Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IIIA-VA group semiconductor single crystal substrate and method for...
- Patent number 9,691,617
- Issue date Jun 27, 2017
- Beijing Tongmei Xtal Technology Co., Ltd.
- Morris Young
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low etch pit density (EPD) semi-insulating III-V wafers
- Patent number 8,361,225
- Issue date Jan 29, 2013
- AXT, Inc.
- Weiguo Liu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Low etch pit density (EPD) semi-insulating GaAs wafers
- Patent number 7,566,641
- Issue date Jul 28, 2009
- AXT, Inc.
- Weiguo Liu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LOW ETCH PIT DENSITY 6 INCH SEMI-INSULATING GALLIUM ARSENIDE WAFERS
- Publication number 20240426025
- Publication date Dec 26, 2024
- AXT, Inc.
- Rajaram Shetty
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW ETCH PIT DENSITY, LOW SLIP LINE DENSITY, AND LOW STRAIN INDIUM...
- Publication number 20240384436
- Publication date Nov 21, 2024
- AXT, Inc.
- Morris Young
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW ETCH PIT DENSITY 6 INCH SEMI-INSULATING GALLIUM ARSENIDE WAFERS
- Publication number 20230407522
- Publication date Dec 21, 2023
- AXT, Inc.
- Rajaram Shetty
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW ETCH PIT DENSITY, LOW SLIP LINE DENSITY, AND LOW STRAIN INDIUM...
- Publication number 20230212784
- Publication date Jul 6, 2023
- AXT, Inc.
- Morris Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW ETCH PIT DENSITY, LOW SLIP LINE DENSITY, AND LOW STRAIN INDIUM...
- Publication number 20210269939
- Publication date Sep 2, 2021
- AXT, Inc.
- Morris Young
- C30 - CRYSTAL GROWTH
Information Patent Application
Low Etch Pit Density Gallium Arsenide Crystals With Boron Dopant
- Publication number 20200190697
- Publication date Jun 18, 2020
- AXT, Inc.
- Rajaram Shetty
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW ETCH PIT DENSITY 6 INCH SEMI-INSULATING GALLIUM ARSENIDE WAFERS
- Publication number 20200190696
- Publication date Jun 18, 2020
- AXT, Inc.
- Rajaram Shetty
- C30 - CRYSTAL GROWTH
Information Patent Application
CONTROLLABLE OXYGEN CONCENTRATION IN SEMICONDUCTOR SUBSTRATE
- Publication number 20160053404
- Publication date Feb 25, 2016
- BEIJING TONGMEI XTAL TECHNOLOGY CO., LTD.
- Morris YOUNG
- C30 - CRYSTAL GROWTH
Information Patent Application
IIIA-VA GROUP SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE AND METHOD FOR...
- Publication number 20150279678
- Publication date Oct 1, 2015
- BEIJING TONGMEI XTAL TECHNOLOGY CO., LTD.
- Morris Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Etch Pit Density (EPD) Semi-Insulating III-V Wafers
- Publication number 20110293890
- Publication date Dec 1, 2011
- AXT, Inc.
- Weiguo Liu
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW ETCH PIT DENSITY (EPD) SEMI-INSULATING III-V WAFERS
- Publication number 20110089538
- Publication date Apr 21, 2011
- Weiguo Liu
- C30 - CRYSTAL GROWTH
Information Patent Application
Low Etch Pit Density (EPD) Semi-Insulating GaAs Wafers
- Publication number 20100001288
- Publication date Jan 7, 2010
- AXT, Inc.
- Weiguo Liu
- C30 - CRYSTAL GROWTH
Information Patent Application
Low etch pit density (EPD) semi-insulating GaAs wafers
- Publication number 20080280427
- Publication date Nov 13, 2008
- Weiguo Liu
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus and method for reducing impurities in a semiconductor mat...
- Publication number 20060183329
- Publication date Aug 17, 2006
- AXT, Inc.
- Charles Leung
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus and method for balanced pressure growth of Group III-V mo...
- Publication number 20040173140
- Publication date Sep 9, 2004
- Xiao Gordon Liu
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus and method for reducing impurities in a semiconductor mat...
- Publication number 20040173315
- Publication date Sep 9, 2004
- Charles Leung
- C30 - CRYSTAL GROWTH

Morris S. Young

Person

Patents Grantslast 30 patents

Low etch pit density 6 inch semi-insulating gallium arsenide wafers

Low etch pit density, low slip line density, and low strain indium...

Low etch pit density 6 inch semi-insulating gallium arsenide wafers

Low etch pit density, low slip line density, and low strain indium...

IIIA-VA group semiconductor single crystal substrate and method for...

Low etch pit density (EPD) semi-insulating III-V wafers

Low etch pit density (EPD) semi-insulating GaAs wafers

Patents Applicationslast 30 patents

LOW ETCH PIT DENSITY 6 INCH SEMI-INSULATING GALLIUM ARSENIDE WAFERS

LOW ETCH PIT DENSITY, LOW SLIP LINE DENSITY, AND LOW STRAIN INDIUM...

LOW ETCH PIT DENSITY 6 INCH SEMI-INSULATING GALLIUM ARSENIDE WAFERS

LOW ETCH PIT DENSITY, LOW SLIP LINE DENSITY, AND LOW STRAIN INDIUM...

LOW ETCH PIT DENSITY, LOW SLIP LINE DENSITY, AND LOW STRAIN INDIUM...

Low Etch Pit Density Gallium Arsenide Crystals With Boron Dopant

LOW ETCH PIT DENSITY 6 INCH SEMI-INSULATING GALLIUM ARSENIDE WAFERS

CONTROLLABLE OXYGEN CONCENTRATION IN SEMICONDUCTOR SUBSTRATE

IIIA-VA GROUP SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE AND METHOD FOR...

Low Etch Pit Density (EPD) Semi-Insulating III-V Wafers

LOW ETCH PIT DENSITY (EPD) SEMI-INSULATING III-V WAFERS

Low Etch Pit Density (EPD) Semi-Insulating GaAs Wafers

Low etch pit density (EPD) semi-insulating GaAs wafers

Apparatus and method for reducing impurities in a semiconductor mat...

Apparatus and method for balanced pressure growth of Group III-V mo...

Apparatus and method for reducing impurities in a semiconductor mat...