Muhammed Ayman Shibib

Person

Wyomissing, PA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Metal-oxide-semiconductor device having trenched diffusion region a...
- Patent number 8,648,445
- Issue date Feb 11, 2014
- Agere Systems LLC
- Muhammed Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-oxide-semiconductor device having trenched diffusion region a...
- Patent number 8,153,484
- Issue date Apr 10, 2012
- Agere Systems Inc.
- Muhammed Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Control of hot carrier injection in a metal-oxide semiconductor device
- Patent number 7,820,517
- Issue date Oct 26, 2010
- Agere Systems Inc.
- Peter L. Gammel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-gate metal-oxide-semiconductor device
- Patent number 7,579,245
- Issue date Aug 25, 2009
- Agere Systems Inc.
- Muhammed Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-oxide-semiconductor device having improved performance and re...
- Patent number 7,335,565
- Issue date Feb 26, 2008
- Agere Systems Inc.
- Muhammed Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-gate metal-oxide semiconductor device
- Patent number 7,329,922
- Issue date Feb 12, 2008
- Agere Systems Inc.
- Muhammed Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-oxide-semiconductor device including a buried lightly-doped d...
- Patent number 7,297,606
- Issue date Nov 20, 2007
- Agere Systems Inc.
- Muhammed Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Control of hot carrier injection in a metal-oxide semiconductor device
- Patent number 7,279,744
- Issue date Oct 9, 2007
- Agere Systems Inc.
- Peter L. Gammel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge protection in a semiconductor device
- Patent number 7,190,563
- Issue date Mar 13, 2007
- Agere Systems Inc.
- Muhammed Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graded conductive structure for use in a metal-oxide-semiconductor...
- Patent number 7,148,540
- Issue date Dec 12, 2006
- Agere Systems Inc.
- Muhammed Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-oxide-semiconductor device with enhanced source electrode
- Patent number 7,126,193
- Issue date Oct 24, 2006
- Ciclon Semiconductor Device Corp.
- Frank A. Baiocchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-oxide-semiconductor device having an enhanced shielding struc...
- Patent number 7,087,959
- Issue date Aug 8, 2006
- Agere Systems Inc.
- Muhammed Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thick oxide region in a semiconductor device
- Patent number 7,067,890
- Issue date Jun 27, 2006
- Agere Systems Inc.
- Muhammed Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced substrate contact for a semiconductor device
- Patent number 7,041,561
- Issue date May 9, 2006
- Agere Systems Inc.
- Frank A. Baiocchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-oxide-semiconductor device having improved performance and re...
- Patent number 7,005,703
- Issue date Feb 28, 2006
- Agere Systems Inc.
- Muhammed Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-oxide-semiconductor device including a buried lightly-doped d...
- Patent number 6,927,453
- Issue date Aug 9, 2005
- Agere Systems Inc.
- Muhammed Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-oxide-semiconductor device formed in silicon-on-insulator
- Patent number 6,890,804
- Issue date May 10, 2005
- Agere Systems, INC
- Muhammed Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffused MOS devices with strained silicon portions and methods for...
- Patent number 6,828,628
- Issue date Dec 7, 2004
- Agere Systems, INC
- John Michael Hergenrother
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge protection in double diffused MOS transistors
- Patent number 6,821,831
- Issue date Nov 23, 2004
- Agere Systems Inc.
- Muhammed Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS device having a tapered oxide
- Patent number 6,762,457
- Issue date Jul 13, 2004
- Agere Systems Inc.
- Charles Walter Pearce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge protection in double diffused MOS transistors
- Patent number 6,576,506
- Issue date Jun 10, 2003
- Agere Systems Inc.
- Muhammed Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual level gate process for hot carrier control in double diffused...
- Patent number 6,559,011
- Issue date May 6, 2003
- Muhammed Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of selective oxidation to improve LDMOS power transistors
- Patent number 6,506,641
- Issue date Jan 14, 2003
- Agere Systems Inc.
- Charles Walter Pearce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch stops and alignment marks for bonded wafers
- Patent number 6,372,600
- Issue date Apr 16, 2002
- Agere Systems Guardian Corp.
- John Charles Desko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary semiconductor devices
- Patent number 6,303,961
- Issue date Oct 16, 2001
- Aqere Systems Guardian Corp.
- Muhammed A. Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacture of complementary MOS and bipolar integrated circuits
- Patent number 6,140,170
- Issue date Oct 31, 2000
- Lucent Technologies Inc.
- Muhammed Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure for thermal shutdown protection
- Patent number 6,013,934
- Issue date Jan 11, 2000
- Lucent Technologies Inc.
- Milton Luther Embree
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a high voltage termination improvement
- Patent number 5,959,342
- Issue date Sep 28, 1999
- Lucent Technologies Inc.
- Muhammed Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with MOS-controlled protection for reverse-biase...
- Patent number 5,949,128
- Issue date Sep 7, 1999
- Lucent Technologies Inc.
- Muhammed Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-channel MOS transistor
- Patent number 5,894,154
- Issue date Apr 13, 1999
- Lucent Technologies Inc.
- Muhammed Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METAL-OXIDE-SEMICONDUCTOR DEVICE HAVING TRENCHED DIFFUSION REGION A...
- Publication number 20120175702
- Publication date Jul 12, 2012
- LSI Corporation
- Muhammed Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal-oxide-semiconductor device having trenched diffusion region a...
- Publication number 20080093667
- Publication date Apr 24, 2008
- Agere Systems Inc.
- Muhammed Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual-Gate Metal-Oxide-Semiconductor Device
- Publication number 20080054994
- Publication date Mar 6, 2008
- Muhammed Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROL OF HOT CARRIER INJECTION IN A METAL-OXIDE SEMICONDUCTOR DEVICE
- Publication number 20080003703
- Publication date Jan 3, 2008
- Peter L. Gammel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-OXIDE-SEMICONDUCTOR DEVICE WITH ENHANCED SOURCE ELECTRODE
- Publication number 20070007593
- Publication date Jan 11, 2007
- CICLON SEMICONDUCTOR DEVICE CORP.
- Frank A. Baiocchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal-oxide-semiconductor device having improved performance and re...
- Publication number 20060128085
- Publication date Jun 15, 2006
- Agere Systems Inc.
- Muhammed Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual-gate metal-oxide semiconductor device
- Publication number 20060113601
- Publication date Jun 1, 2006
- Muhammed Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal-oxide-semiconductor device having trenched diffusion region a...
- Publication number 20060071270
- Publication date Apr 6, 2006
- Muhammed Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thick oxide region in a semiconductor device and method of forming...
- Publication number 20060071283
- Publication date Apr 6, 2006
- Muhammed Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal-oxide-semiconductor device having an enhanced shielding struc...
- Publication number 20060038224
- Publication date Feb 23, 2006
- Muhammed Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Graded conductive structure for use in a metal-oxide-semiconductor...
- Publication number 20050285189
- Publication date Dec 29, 2005
- Muhammed Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Enhanced substrate contact for a semiconductor device
- Publication number 20050221563
- Publication date Oct 6, 2005
- Frank A. Baiocchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal-oxide-semiconductor device including a buried lightly-doped d...
- Publication number 20050191815
- Publication date Sep 1, 2005
- Agere Systems Inc.
- Muhammed Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Control of hot carrier injection in a metal-oxide semiconductor device
- Publication number 20050156234
- Publication date Jul 21, 2005
- Peter L. Gammel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-OXIDE-SEMICONDUCTOR DEVICE FORMED IN SILICON-ON-INSULATOR
- Publication number 20050112808
- Publication date May 26, 2005
- Muhammed Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal-oxide-semiconductor device having improved gate arrangement
- Publication number 20050110083
- Publication date May 26, 2005
- Peter Ledel Gammel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal-oxide-semiconductor device having improved performance and re...
- Publication number 20050082610
- Publication date Apr 21, 2005
- Muhammed Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal-oxide-semiconductor device with enhanced source electrode
- Publication number 20050077552
- Publication date Apr 14, 2005
- Frank A. Baiocchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal-oxide-semiconductor device including a buried lightly-doped d...
- Publication number 20050067655
- Publication date Mar 31, 2005
- Muhammed Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diffused MOS devices with strained silicon portions and methods for...
- Publication number 20040173846
- Publication date Sep 9, 2004
- John Michael Hergenrother
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrostatic discharge protection in a semiconductor device
- Publication number 20040075145
- Publication date Apr 22, 2004
- Muhammed Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrostatic discharge protection in double diffused MOS transistors
- Publication number 20030170943
- Publication date Sep 11, 2003
- Muhammed Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Use of selective oxidation to improve LDMOS power transistors
- Publication number 20030100165
- Publication date May 29, 2003
- Charles Walter Pearce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrostatic discharge protection in double diffused MOS transistors
- Publication number 20030001199
- Publication date Jan 2, 2003
- Muhammed Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS

Muhammed Ayman Shibib

Person

Patents Grantslast 30 patents

Metal-oxide-semiconductor device having trenched diffusion region a...

Metal-oxide-semiconductor device having trenched diffusion region a...

Control of hot carrier injection in a metal-oxide semiconductor device

Dual-gate metal-oxide-semiconductor device

Metal-oxide-semiconductor device having improved performance and re...

Dual-gate metal-oxide semiconductor device

Metal-oxide-semiconductor device including a buried lightly-doped d...

Control of hot carrier injection in a metal-oxide semiconductor device

Electrostatic discharge protection in a semiconductor device

Graded conductive structure for use in a metal-oxide-semiconductor...

Metal-oxide-semiconductor device with enhanced source electrode

Metal-oxide-semiconductor device having an enhanced shielding struc...

Thick oxide region in a semiconductor device

Enhanced substrate contact for a semiconductor device

Metal-oxide-semiconductor device having improved performance and re...

Metal-oxide-semiconductor device including a buried lightly-doped d...

Metal-oxide-semiconductor device formed in silicon-on-insulator

Diffused MOS devices with strained silicon portions and methods for...

Electrostatic discharge protection in double diffused MOS transistors

LDMOS device having a tapered oxide

Electrostatic discharge protection in double diffused MOS transistors

Dual level gate process for hot carrier control in double diffused...

Use of selective oxidation to improve LDMOS power transistors

Etch stops and alignment marks for bonded wafers

Complementary semiconductor devices

Manufacture of complementary MOS and bipolar integrated circuits

Semiconductor structure for thermal shutdown protection

Semiconductor device having a high voltage termination improvement

Bipolar transistor with MOS-controlled protection for reverse-biase...

P-channel MOS transistor

Patents Applicationslast 30 patents

METAL-OXIDE-SEMICONDUCTOR DEVICE HAVING TRENCHED DIFFUSION REGION A...

Metal-oxide-semiconductor device having trenched diffusion region a...

Dual-Gate Metal-Oxide-Semiconductor Device

CONTROL OF HOT CARRIER INJECTION IN A METAL-OXIDE SEMICONDUCTOR DEVICE

METAL-OXIDE-SEMICONDUCTOR DEVICE WITH ENHANCED SOURCE ELECTRODE

Metal-oxide-semiconductor device having improved performance and re...

Dual-gate metal-oxide semiconductor device

Metal-oxide-semiconductor device having trenched diffusion region a...

Thick oxide region in a semiconductor device and method of forming...

Metal-oxide-semiconductor device having an enhanced shielding struc...

Graded conductive structure for use in a metal-oxide-semiconductor...

Enhanced substrate contact for a semiconductor device

Metal-oxide-semiconductor device including a buried lightly-doped d...

Control of hot carrier injection in a metal-oxide semiconductor device

METAL-OXIDE-SEMICONDUCTOR DEVICE FORMED IN SILICON-ON-INSULATOR

Metal-oxide-semiconductor device having improved gate arrangement

Metal-oxide-semiconductor device having improved performance and re...

Metal-oxide-semiconductor device with enhanced source electrode

Metal-oxide-semiconductor device including a buried lightly-doped d...

Diffused MOS devices with strained silicon portions and methods for...

Electrostatic discharge protection in a semiconductor device

Electrostatic discharge protection in double diffused MOS transistors

Use of selective oxidation to improve LDMOS power transistors

Electrostatic discharge protection in double diffused MOS transistors