Nanseng Jeng

Person

Vancouver, WA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Intermediate structure having a silicon barrier layer encapsulating...
- Patent number 6,936,897
- Issue date Aug 30, 2005
- Micron Technology, Inc.
- Pai-Hung Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Barrier in gate stack for improved gate dielectric integrity
- Patent number 6,930,363
- Issue date Aug 16, 2005
- Micron Technology, Inc.
- Nanseng Jeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for optimizing printing of an alternating phase shift mask h...
- Patent number 6,917,411
- Issue date Jul 12, 2005
- Micron Technology, Inc.
- Christophe Pierrat
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Streamlined field isolation process
- Patent number 6,835,634
- Issue date Dec 28, 2004
- Micron Technology, Inc.
- Pierre C. Fazan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure having trench structures formed on both side of...
- Patent number 6,809,395
- Issue date Oct 26, 2004
- Micron Technology, Inc.
- Fernando Gonzales
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Barrier in gate stack for improved gate dielectric integrity
- Patent number 6,770,571
- Issue date Aug 3, 2004
- Micron Technology, Inc.
- Nanseng Jeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer isolation structure formed by field oxidation
- Patent number 6,762,475
- Issue date Jul 13, 2004
- Micron Technology, Inc.
- Viju K. Mathews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer isolation structure formed by field oxidation
- Patent number 6,611,038
- Issue date Aug 26, 2003
- Micron Technology, Inc.
- Viju K. Mathews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Barrier in gate stack for improved gate dielectric integrity
- Patent number 6,562,730
- Issue date May 13, 2003
- Micron Technology, Inc.
- Nanseng Jeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a spacer for semiconductor manufacture
- Patent number 6,472,280
- Issue date Oct 29, 2002
- Micron Technology, Inc.
- Nanseng Jeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing photolithographic steps in a semiconductor inte...
- Patent number 6,432,619
- Issue date Aug 13, 2002
- Micron Technology, Inc.
- Nanseng Jeng
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Barrier in gate stack for improved gate dielectric integrity
- Patent number 6,373,114
- Issue date Apr 16, 2002
- Micron Technology, Inc.
- Nanseng Jeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process to improve the flow of oxide during field oxidation by fluo...
- Patent number 6,365,490
- Issue date Apr 2, 2002
- Micron Technology, Inc.
- Viju K. Mathews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing photolithographic steps in a semiconductor inte...
- Patent number 6,337,172
- Issue date Jan 8, 2002
- Nanseng Jeng
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Semiconductor processing method of forming an electrically conducti...
- Patent number 6,245,671
- Issue date Jun 12, 2001
- Micron Technology, Inc.
- Viju K. Mathews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a spacer for semiconductor manufacture
- Patent number 6,232,191
- Issue date May 15, 2001
- Micron Technology, Inc.
- Nanseng Jeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a spacer using photosensitive material
- Patent number 6,225,174
- Issue date May 1, 2001
- Micron Technology, Inc.
- Nanseng Jeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a spacer out of photosensitive material
- Patent number 6,221,564
- Issue date Apr 24, 2001
- Micron Technology, Inc.
- Nanseng Jeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing photolithographic steps in a semiconductor inte...
- Patent number 6,127,096
- Issue date Oct 3, 2000
- Micron Technology, Inc.
- Nanseng Jeng
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Texturized polycrystalline silicon to aid field oxide formation
- Patent number 6,114,218
- Issue date Sep 5, 2000
- Microm Technology, Inc.
- Nanseng Jeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Assisted local oxidation of silicon
- Patent number 6,103,595
- Issue date Aug 15, 2000
- Micron Technology, Inc.
- Nanseng Jeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a LOCOS trench isolation structure
- Patent number 6,090,685
- Issue date Jul 18, 2000
- Micron Technology Inc.
- Fernando Gonzales
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a semiconductor device contact structure compris...
- Patent number 6,077,740
- Issue date Jun 20, 2000
- Micron Technology, Inc.
- Nanseng Jeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Well-drive anneal technique using preplacement of nitride films for...
- Patent number 6,069,059
- Issue date May 30, 2000
- Micron Technology, Inc.
- Pai-Hung Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing photolithographic steps in a semiconductor inte...
- Patent number 5,972,569
- Issue date Oct 26, 1999
- Micron Technology, Inc.
- Nanseng Jeng
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Method for forming field oxide or other insulators during the forma...
- Patent number 5,963,820
- Issue date Oct 5, 1999
- Micron Technology, Inc.
- Nanseng Jeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a field effect transistor
- Patent number 5,940,692
- Issue date Aug 17, 1999
- Micron Technology, Inc.
- Nanseng Jeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor processing method of forming an electrically conducti...
- Patent number 5,933,754
- Issue date Aug 3, 1999
- Micron Technology, Inc.
- Viju K. Mathews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process to improve the flow of oxide during field oxidation by fluo...
- Patent number 5,902,128
- Issue date May 11, 1999
- Micron Technology, Inc.
- Viju K. Mathews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Locus isolation technique using high pressure oxidation (hipox) and...
- Patent number 5,891,788
- Issue date Apr 6, 1999
- Micron Technology, Inc.
- Pierre C. Fazan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LOCOS trench isolation structures
- Publication number 20060231902
- Publication date Oct 19, 2006
- Fernando Gonzalez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Barrier in gate stack for improved gate dielectric integrity
- Publication number 20050017312
- Publication date Jan 27, 2005
- Nanseng Jeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Locos trench isolation structure
- Publication number 20050012158
- Publication date Jan 20, 2005
- Micron Technology, Inc.
- Fernando Gonzalez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor wafer isolation structure formed by field oxidation
- Publication number 20030218232
- Publication date Nov 27, 2003
- Viju K. Mathews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Barrier in gate stack for improved gate dielectric integrity
- Publication number 20030139061
- Publication date Jul 24, 2003
- Nanseng Jeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WELL-DRIVE ANNEAL TECHNIQUE USING PREPLACEMENT OF NITRIDE FILMS FOR...
- Publication number 20030134485
- Publication date Jul 17, 2003
- PAI-HUNG PAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor wafer isolation structure formed by field oxidation
- Publication number 20020060355
- Publication date May 23, 2002
- Viju K. Mathews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for reducing photolithographic steps in a semiconductor inte...
- Publication number 20020009675
- Publication date Jan 24, 2002
- Nanseng Jeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Barrier in gate stack for improved gate dielectric integrity
- Publication number 20010046742
- Publication date Nov 29, 2001
- Nanseng Jeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming a spacer for semiconductor manufacture
- Publication number 20010041409
- Publication date Nov 15, 2001
- Micron Technology, Inc.
- Nanseng Jeng
- H01 - BASIC ELECTRIC ELEMENTS

Nanseng Jeng

Person

Patents Grantslast 30 patents

Intermediate structure having a silicon barrier layer encapsulating...

Barrier in gate stack for improved gate dielectric integrity

Method for optimizing printing of an alternating phase shift mask h...

Streamlined field isolation process

Isolation structure having trench structures formed on both side of...

Barrier in gate stack for improved gate dielectric integrity

Semiconductor wafer isolation structure formed by field oxidation

Semiconductor wafer isolation structure formed by field oxidation

Barrier in gate stack for improved gate dielectric integrity

Method for forming a spacer for semiconductor manufacture

Method for reducing photolithographic steps in a semiconductor inte...

Barrier in gate stack for improved gate dielectric integrity

Process to improve the flow of oxide during field oxidation by fluo...

Method for reducing photolithographic steps in a semiconductor inte...

Semiconductor processing method of forming an electrically conducti...

Method for forming a spacer for semiconductor manufacture

Method for forming a spacer using photosensitive material

Method for forming a spacer out of photosensitive material

Method for reducing photolithographic steps in a semiconductor inte...

Texturized polycrystalline silicon to aid field oxide formation

Assisted local oxidation of silicon

Method of forming a LOCOS trench isolation structure

Method for forming a semiconductor device contact structure compris...

Well-drive anneal technique using preplacement of nitride films for...

Method for reducing photolithographic steps in a semiconductor inte...

Method for forming field oxide or other insulators during the forma...

Method of forming a field effect transistor

Semiconductor processing method of forming an electrically conducti...

Process to improve the flow of oxide during field oxidation by fluo...

Locus isolation technique using high pressure oxidation (hipox) and...

Patents Applicationslast 30 patents

LOCOS trench isolation structures

Barrier in gate stack for improved gate dielectric integrity

Locos trench isolation structure

Semiconductor wafer isolation structure formed by field oxidation

Barrier in gate stack for improved gate dielectric integrity

WELL-DRIVE ANNEAL TECHNIQUE USING PREPLACEMENT OF NITRIDE FILMS FOR...

Semiconductor wafer isolation structure formed by field oxidation

Method for reducing photolithographic steps in a semiconductor inte...

Barrier in gate stack for improved gate dielectric integrity

Method for forming a spacer for semiconductor manufacture