Naohito Yoshida

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 6,307,245
- Issue date Oct 23, 2001
- Mitsubishi Denki Kabushiki Kaisha
- Tetsuo Kunii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with refractory metal element
- Patent number 6,013,926
- Issue date Jan 11, 2000
- Mitsubishi Denki Kabushiki Kaisha
- Tomoki Oku
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device
- Patent number 5,883,407
- Issue date Mar 16, 1999
- Mitsubishi Denki Kabushiki Kaisha
- Tetsuo Kunii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making bipolar transistor
- Patent number 5,739,062
- Issue date Apr 14, 1998
- Mitsubishi Denki Kabushiki Kaisha
- Naohito Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor including asymmetrical carrier su...
- Patent number 5,739,558
- Issue date Apr 14, 1998
- Mitsubishi Denki Kabushiki Kaisha
- Takao Ishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device
- Patent number 5,728,611
- Issue date Mar 17, 1998
- Mitsubishi Denki Kabushiki Kaisha
- Takayuki Hisaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device strucutre having a two-dimensional electron ga...
- Patent number 5,677,553
- Issue date Oct 14, 1997
- Mitsubishi Denki Kabushiki Kaisha
- Yoshitsugu Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor
- Patent number 5,414,273
- Issue date May 9, 1995
- Mitsubishi Denki Kabushiki Kaisha
- Teruyuki Shimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser
- Patent number 5,210,767
- Issue date May 11, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Satoshi Arimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained superlattice semiconductor structure
- Patent number 5,181,086
- Issue date Jan 19, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Naohito Yoshida
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20090039487
- Publication date Feb 12, 2009
- Mitsubishi Electric Corporation
- Keiichi Kawashima
- H01 - BASIC ELECTRIC ELEMENTS

Naohito Yoshida

Person

Patents Grantslast 30 patents

Semiconductor device

Semiconductor device with refractory metal element

Semiconductor device

Method of making bipolar transistor

High electron mobility transistor including asymmetrical carrier su...

Method of fabricating semiconductor device

Semiconductor device strucutre having a two-dimensional electron ga...

Heterojunction bipolar transistor

Semiconductor laser

Strained superlattice semiconductor structure

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE