Naoto Okabe

Person

Chita, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Insulated gate bipolar transistor and method of fabricating the same
- Patent number 6,452,219
- Issue date Sep 17, 2002
- Denso Corporation
- Yoshiyuki Miyase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate field effect transistor and manufacturing method of...
- Patent number 6,281,546
- Issue date Aug 28, 2001
- Denso Corporation
- Yoshihiko Ozeki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate type field effect transistor and method of manufactu...
- Patent number 6,146,947
- Issue date Nov 14, 2000
- Nippondenso Co., Ltd.
- Naoto Okabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing same
- Patent number 6,107,661
- Issue date Aug 22, 2000
- Nippondenso Co., Ltd.
- Naoto Okabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device
- Patent number 6,100,140
- Issue date Aug 8, 2000
- Nippondenso Co., Ltd.
- Naoto Okabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate type bipolar-transistor
- Patent number 5,973,338
- Issue date Oct 26, 1999
- Nippondenso Co., Ltd.
- Naoto Okabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device in which defects due to LOCOS or heat treatmen...
- Patent number 5,925,911
- Issue date Jul 20, 1999
- Nippondenso Co., Ltd.
- Naoto Okabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing same
- Patent number 5,801,445
- Issue date Sep 1, 1998
- Denso Corporation
- Yasuo Ishihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate type field effect transistor and method of manufactu...
- Patent number 5,753,943
- Issue date May 19, 1998
- Nippondenso Co., Ltd.
- Naoto Okabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate field effect transistor having guard ring regions
- Patent number 5,723,882
- Issue date Mar 3, 1998
- Nippondenso Co., Ltd.
- Naoto Okabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor
- Patent number 5,719,412
- Issue date Feb 17, 1998
- Nippondenso Co., Ltd.
- Naoto Okabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical type insulated-gate semiconductor device
- Patent number 5,545,908
- Issue date Aug 13, 1996
- Nippondenso Co., Ltd.
- Norihiro Tokura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor with reverse conducting current
- Patent number 5,519,245
- Issue date May 21, 1996
- Nippondenso Co., Ltd.
- Norihito Tokura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor
- Patent number 5,510,634
- Issue date Apr 23, 1996
- Nippondenso Co., Ltd.
- Naoto Okabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with protective element
- Patent number 5,475,258
- Issue date Dec 12, 1995
- Nippondenso Co., Ltd.
- Naohito Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor provided with a minority carrier...
- Patent number 5,464,992
- Issue date Nov 7, 1995
- Nippondenso Co., Ltd.
- Naoto Okabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor with current detection function
- Patent number 5,448,092
- Issue date Sep 5, 1995
- Nippondenso Co., Ltd.
- Naoto Okabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making an insulated gate bipolar transistor having gate s...
- Patent number 5,169,793
- Issue date Dec 8, 1992
- Nippondenso Co., Ltd.
- Naoto Okabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor
- Patent number 4,985,743
- Issue date Jan 15, 1991
- Nippondenso Co., Ltd.
- Norihito Tokura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermoelectric generating composite functioning apparatus
- Patent number 4,653,443
- Issue date Mar 31, 1987
- Nippondenso Co., Ltd.
- Takeshi Fukazawa
- F02 - COMBUSTION ENGINES HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS

Naoto Okabe

Person

Patents Grantslast 30 patents

Insulated gate bipolar transistor and method of fabricating the same

Insulated gate field effect transistor and manufacturing method of...

Insulated gate type field effect transistor and method of manufactu...

Semiconductor device and method of manufacturing same

Manufacturing method of semiconductor device

Insulated gate type bipolar-transistor

Semiconductor device in which defects due to LOCOS or heat treatmen...

Semiconductor device and method of manufacturing same

Insulated gate type field effect transistor and method of manufactu...

Insulated gate field effect transistor having guard ring regions

Insulated gate bipolar transistor

Vertical type insulated-gate semiconductor device

Insulated gate bipolar transistor with reverse conducting current

Insulated gate bipolar transistor

Power semiconductor device with protective element

Insulated gate bipolar transistor provided with a minority carrier...

Insulated gate bipolar transistor with current detection function

Method of making an insulated gate bipolar transistor having gate s...

Insulated gate bipolar transistor

Thermoelectric generating composite functioning apparatus