Naoto Saito

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 8,063,445
- Issue date Nov 22, 2011
- Seiko Instruments Inc.
- Shinjiro Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method for manufacturing the same, and flexib...
- Patent number 7,714,425
- Issue date May 11, 2010
- Elpida Memory, Inc.
- Masahiro Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a bipolar transistor
- Patent number 6,335,256
- Issue date Jan 1, 2002
- Seiko Instruments Inc.
- Naoto Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing semiconductor device using an adsorption layer
- Patent number 5,851,909
- Issue date Dec 22, 1998
- Seiko Instruments Inc.
- Masaaki Kamiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge pump semiconductor device
- Patent number 5,757,043
- Issue date May 26, 1998
- Seiko Instruments Inc.
- Naoto Saito
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Impurity doping method with diffusion source of boron-silicide film
- Patent number 5,753,530
- Issue date May 19, 1998
- Seiko Instruments, Inc.
- Tadao Akamine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Impurity doping method with adsorbed diffusion source
- Patent number 5,532,185
- Issue date Jul 2, 1996
- Seiko Instruments Inc.
- Tadao Akamine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing PN junction device
- Patent number 5,514,620
- Issue date May 7, 1996
- Seiko Instruments Inc.
- Kenji Aoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing CMOS transistor
- Patent number 5,366,922
- Issue date Nov 22, 1994
- Seiko Instruments Inc.
- Kenji Aoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping method of barrier region in semiconductor device
- Patent number 5,338,697
- Issue date Aug 16, 1994
- Seiko Instruments Inc.
- Kenji Aoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing field effect transistor
- Patent number 5,124,272
- Issue date Jun 23, 1992
- Seiko Instruments, Inc.
- Naoto Saito
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND FLEXIB...
- Publication number 20090134506
- Publication date May 28, 2009
- Elpida Memory, Inc.
- Masahiro YAMAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS

Naoto Saito

Person

Patents Grantslast 30 patents

Semiconductor device and method of manufacturing the same

Semiconductor device, method for manufacturing the same, and flexib...

Method of manufacturing a bipolar transistor

Method of producing semiconductor device using an adsorption layer

Charge pump semiconductor device

Impurity doping method with diffusion source of boron-silicide film

Impurity doping method with adsorbed diffusion source

Method of producing PN junction device

Method for producing CMOS transistor

Doping method of barrier region in semiconductor device

Method of producing field effect transistor

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND FLEXIB...