Claims
- 1. A process for fabricating a semiconductor device comprising the steps of:
- forming a silicon oxide layer on a silicon substrate;
- removing a portion of the silicon oxide layer to expose an active silicon surface;
- cleaning a surface of a silicon region, by procedure which includes
- heating a surface of the silicon region in a chamber at a temperature of 8500.degree. C. or higher,
- evacuating a chamber at a background pressure of less than 5.times.10.sup.-7 torr, and
- applying H.sub.2 gas at a pressure of more than 1.times.10.sup.-4 torr to expose an active silicon surface;
- forming a boron film on the exposed active silicon surface and on at least part of the remaining silicon oxide layer by introducing B.sub.2 H.sub.6 at the substrate temperature between 4000.degree. C. and 6000.degree. C.;
- forming a boron silicide layer by heating the substrate temperature between 600.degree. C. and 8500+ C. under an inert atmosphere to convert the boron film on the active silicon surface into boron silicide;
- removing the boron film on the silicon oxide layer with nitric acid; and
- introducing boron into the silicon region from the boron silicide layer by heating at a temperature higher than the temperature used in said step of forming a boron silicide layer.
Priority Claims (2)
Number |
Date |
Country |
Kind |
4-129537 |
Apr 1992 |
JPX |
|
5-060865 |
Feb 1993 |
JPX |
|
Parent Case Info
This is a continuation of application Ser. No. 08/049,789 filed on Apr. 21, 1993, now abandoned.
US Referenced Citations (17)
Foreign Referenced Citations (8)
Number |
Date |
Country |
91-059265 |
Jul 1989 |
EPX |
91-165817 |
Dec 1989 |
EPX |
60-92610 |
May 1985 |
JPX |
61-225851 |
Jul 1986 |
JPX |
62-271475 |
Nov 1987 |
JPX |
63-166220 |
Jul 1988 |
JPX |
63-237410 |
Oct 1988 |
JPX |
2-66938 |
Mar 1990 |
JPX |
Continuations (1)
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Number |
Date |
Country |
Parent |
49789 |
Apr 1993 |
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