Narasipur G. Anantha

Person

Hopewell Junction, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Schottky diode having limited area self-aligned guard ring and meth...
- Patent number 4,796,069
- Issue date Jan 3, 1989
- International Business Machines Corporation
- Narasipur G. Anantha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making Schottky diode having limited area self-aligned g...
- Patent number 4,691,435
- Issue date Sep 8, 1987
- International Business Machines Corporation
- Narasipur G. Anantha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication methods for high performance lateral bipolar transistors
- Patent number 4,583,106
- Issue date Apr 15, 1986
- International Business Machines Corporation
- Narasipur G. Anantha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication methods for high performance lateral bipolar transistors
- Patent number 4,546,536
- Issue date Oct 15, 1985
- International Business Machines Corporation
- Narasipur G. Anantha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a lateral PNP transistor
- Patent number 4,510,676
- Issue date Apr 16, 1985
- International Business Machines, Corporation
- Narasipur G. Anantha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for making high performance lateral bipolar transistors
- Patent number 4,492,008
- Issue date Jan 8, 1985
- International Business Machines Corporation
- Narasipur G. Anantha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density memory cell
- Patent number 4,427,989
- Issue date Jan 24, 1984
- International Business Machines Corporation
- Narasipur G. Anantha
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of planarizing silicon dioxide in semiconductor devices
- Patent number 4,389,281
- Issue date Jun 21, 1983
- International Business Machines Corporation
- Narasipur G. Anantha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for avoiding residue on a vertical walled mesa
- Patent number 4,389,294
- Issue date Jun 21, 1983
- International Business Machines Corporation
- Narasipur G. Anantha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a high sheet resistance structure for high densit...
- Patent number 4,316,319
- Issue date Feb 23, 1982
- International Business Machines Corporation
- Narasipur G. Anantha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making stable nitride-defined Schottky barrier diodes
- Patent number T101201
- Issue date Nov 3, 1981
- Narasipur G. Anantha
- 156 - Adhesive bonding and miscellaneous chemical manufacture
Information Patent Grant
Selective epitaxy method using laser annealing for making filamenta...
- Patent number 4,269,631
- Issue date May 26, 1981
- International Business Machines Corporation
- Narasipur G. Anantha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a lateral PNP or NPN with a high gain utilizing r...
- Patent number 4,264,382
- Issue date Apr 28, 1981
- International Business Machines Corporation
- Narasipur G. Anantha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective epitaxy method for making filamentary pedestal transistor
- Patent number 4,252,581
- Issue date Feb 24, 1981
- International Business Machines Corporation
- Narasipur G. Anantha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned method for making bipolar transistor having minimum ba...
- Patent number 4,252,582
- Issue date Feb 24, 1981
- International Business Machines Corporation
- Narasipur G. Anantha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance bipolar device and method for making same
- Patent number 4,236,294
- Issue date Dec 2, 1980
- International Business Machines Corporation
- Narasipur G. Anantha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried high sheet resistance structure for high density integrated...
- Patent number 4,228,450
- Issue date Oct 14, 1980
- International Business Machines Corporation
- Narasipur G. Anantha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit interconnection structure having precision termi...
- Patent number 4,228,369
- Issue date Oct 14, 1980
- International Business Machines Corporation
- Narasipur G. Anantha
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Method for fabricating vertical NPN and PNP structures and the resu...
- Patent number 4,214,315
- Issue date Jul 22, 1980
- International Business Machines Corporation
- Narasipur G. Anantha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral PNP or NPN with a high gain
- Patent number 4,196,440
- Issue date Apr 1, 1980
- International Business Machines Corporation
- Narasipur G. Anantha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance bipolar device and method for making same
- Patent number 4,160,991
- Issue date Jul 10, 1979
- International Business Machines Corporation
- Narasipur G. Anantha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabrication vertical NPN and PNP structures utilizing io...
- Patent number 4,159,915
- Issue date Jul 3, 1979
- International Business Machines Corporation
- Narasipur G. Anantha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge coupled device memory with method of doubled storage capacit...
- Patent number 4,139,910
- Issue date Feb 13, 1979
- International Business Machines Corporation
- Narasipur G. Anantha
- G11 - INFORMATION STORAGE
Information Patent Grant
Interlaced CCD memory
- Patent number 4,117,546
- Issue date Sep 26, 1978
- International Business Machines Corporation
- Narasipur Gundappa Anantha
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile Schottky barrier diode memory cell
- Patent number 4,010,482
- Issue date Mar 1, 1977
- International Business Machines Corporation
- Shakir Ahmed Abbas
- G11 - INFORMATION STORAGE
Information Patent Grant
Schottky barrier diode having chargeable floating gate
- Patent number T953005
- Issue date Dec 7, 1976
- International Business Machines Corporation
- Narasipur G. Anantha
- 357 -

Narasipur G. Anantha

Person

Patents Grantslast 30 patents

Schottky diode having limited area self-aligned guard ring and meth...

Method for making Schottky diode having limited area self-aligned g...

Fabrication methods for high performance lateral bipolar transistors

Fabrication methods for high performance lateral bipolar transistors

Method of fabricating a lateral PNP transistor

Methods for making high performance lateral bipolar transistors

High density memory cell

Method of planarizing silicon dioxide in semiconductor devices

Method for avoiding residue on a vertical walled mesa

Method for making a high sheet resistance structure for high densit...

Method for making stable nitride-defined Schottky barrier diodes

Selective epitaxy method using laser annealing for making filamenta...

Method for making a lateral PNP or NPN with a high gain utilizing r...

Selective epitaxy method for making filamentary pedestal transistor

Self aligned method for making bipolar transistor having minimum ba...

High performance bipolar device and method for making same

Buried high sheet resistance structure for high density integrated...

Integrated circuit interconnection structure having precision termi...

Method for fabricating vertical NPN and PNP structures and the resu...

Lateral PNP or NPN with a high gain

High performance bipolar device and method for making same

Method for fabrication vertical NPN and PNP structures utilizing io...

Charge coupled device memory with method of doubled storage capacit...

Interlaced CCD memory

Non-volatile Schottky barrier diode memory cell

Schottky barrier diode having chargeable floating gate