Natalia Lavrovskaya

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
DMOS transistor having thick gate oxide and STI and method of fabri...
- Patent number 12,113,128
- Issue date Oct 8, 2024
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having an emitter region with a silicide spaced apart fr...
- Patent number 11,791,405
- Issue date Oct 17, 2023
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor with constricted collector region havin...
- Patent number 11,588,019
- Issue date Feb 21, 2023
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor with biased structure between base and...
- Patent number 11,469,315
- Issue date Oct 11, 2022
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor with constricted collector region havin...
- Patent number 11,217,665
- Issue date Jan 4, 2022
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating transistors with implanting dopants at first and second...
- Patent number 11,094,806
- Issue date Aug 17, 2021
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DMOS transistor having thick gate oxide and STI and method of fabri...
- Patent number 11,049,967
- Issue date Jun 29, 2021
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of improving lateral BJT characteristics in BCD technology
- Patent number 10,224,402
- Issue date Mar 5, 2019
- Texas Instruments Incorporated
- Natalia Lavrovskaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a biCMOS semiconductor chip that increases the be...
- Patent number 9,831,135
- Issue date Nov 28, 2017
- Texas Instruments Incorporated
- Natalia Lavrovskaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a BICMOS semiconductor chip that increases the be...
- Patent number 9,595,480
- Issue date Mar 14, 2017
- Texas Instruments Incorporated
- Natalia Lavrovskaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory cell having a heating element and a substrate-b...
- Patent number 8,669,157
- Issue date Mar 11, 2014
- National Semiconductor Corporation
- Jeffrey A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of enhancing charge storage in an E2PROM cell
- Patent number 8,247,862
- Issue date Aug 21, 2012
- National Semiconductor Corporation
- Jeff A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky junction-field-effect-transistor (JFET) structures and met...
- Patent number 8,207,559
- Issue date Jun 26, 2012
- Texas Instruments Incorporated
- Jeffrey A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory cell having a heating element and a substrate-b...
- Patent number 8,183,621
- Issue date May 22, 2012
- Texas Instruments Incorporated
- Jeffrey A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory cell with heating element
- Patent number 7,919,807
- Issue date Apr 5, 2011
- National Semiconductor Corporation
- Jeffrey A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory cell with two capacitors and one PNP transistor...
- Patent number 7,919,805
- Issue date Apr 5, 2011
- National Semiconductor Corporation
- Yuri Mirgorodski
- G11 - INFORMATION STORAGE
Information Patent Grant
Heating element for enhanced E2PROM
- Patent number 7,719,048
- Issue date May 18, 2010
- National Semiconductor Corporation
- Jeff A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
EEPROM structure with improved data retention utilizing biased meta...
- Patent number 7,425,741
- Issue date Sep 16, 2008
- National Semiconductor Corporation
- Andrew Strachan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
BREAKDOWN DIODES AND METHODS OF MAKING THE SAME
- Publication number 20240222527
- Publication date Jul 4, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATING TRANSISTORS WITH IMPLANTING DOPANTS AT FIRST AND SECOND...
- Publication number 20230411501
- Publication date Dec 21, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR WITH CONSTRICTED COLLECTOR REGION HAVIN...
- Publication number 20220093737
- Publication date Mar 24, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATING TRANSISTORS WITH IMPLANTING DOPANTS AT FIRST AND SECOND...
- Publication number 20210343860
- Publication date Nov 4, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DMOS TRANSISTOR HAVING THICK GATE OXIDE AND STI AND METHOD OF FABRI...
- Publication number 20210280714
- Publication date Sep 9, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR WITH CONSTRICTED COLLECTOR REGION HAVIN...
- Publication number 20210242308
- Publication date Aug 5, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR WITH BIASED STRUCTURE BETWEEN BASE AND...
- Publication number 20210210625
- Publication date Jul 8, 2021
- TEXAS INSTRUMENTS INCORPORATED
- ALEXEI SADOVNIKOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DMOS TRANSISTOR HAVING THICK GATE OXIDE AND STI AND METHOD OF FABRI...
- Publication number 20200144413
- Publication date May 7, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATING TRANSISTORS WITH IMPLANTING DOPANTS AT FIRST AND SECOND...
- Publication number 20190207017
- Publication date Jul 4, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATING TRANSISTORS WITH A DIELECTRIC FORMED ON A SIDEWALL OF A...
- Publication number 20190165129
- Publication date May 30, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A BICMOS SEMICONDUCTOR CHIP THAT INCREASES THE BE...
- Publication number 20170140991
- Publication date May 18, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Natalia Lavrovskaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A BICMOS SEMICONDUCTOR CHIP THAT INCREASES THE BE...
- Publication number 20160163598
- Publication date Jun 9, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Natalia Lavrovskaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF IMPROVING LATERAL BJT CHARACTERISTICS IN BCD TECHNOLOGY
- Publication number 20160141363
- Publication date May 19, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Natalia Lavrovskaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY CELL HAVING A HEATING ELEMENT AND A SUBSTRATE-B...
- Publication number 20120230118
- Publication date Sep 13, 2012
- TEXAS INSTRUMENTS INCORPORATED
- Jeffrey A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-Volatile Memory Cell Having a Heating Element and a Substrate-B...
- Publication number 20110147820
- Publication date Jun 23, 2011
- Jeffrey A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF ENHANCING CHARGE STORAGE IN AN E2PROM CELL
- Publication number 20100157682
- Publication date Jun 24, 2010
- National Semiconductor Corporation
- Jeff A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY JUNCTION-FIELD-EFFECT-TRANSISTOR (JFET) STRUCTURES AND MET...
- Publication number 20100032731
- Publication date Feb 11, 2010
- Jeffrey A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS

Natalia Lavrovskaya

Person

Patents Grantslast 30 patents

DMOS transistor having thick gate oxide and STI and method of fabri...

Transistor having an emitter region with a silicide spaced apart fr...

Bipolar junction transistor with constricted collector region havin...

Bipolar junction transistor with biased structure between base and...

Bipolar junction transistor with constricted collector region havin...

Fabricating transistors with implanting dopants at first and second...

DMOS transistor having thick gate oxide and STI and method of fabri...

Method of improving lateral BJT characteristics in BCD technology

Method of forming a biCMOS semiconductor chip that increases the be...

Method of forming a BICMOS semiconductor chip that increases the be...

Non-volatile memory cell having a heating element and a substrate-b...

Method of enhancing charge storage in an E2PROM cell

Schottky junction-field-effect-transistor (JFET) structures and met...

Non-volatile memory cell having a heating element and a substrate-b...

Non-volatile memory cell with heating element

Non-volatile memory cell with two capacitors and one PNP transistor...

Heating element for enhanced E2PROM

EEPROM structure with improved data retention utilizing biased meta...

Patents Applicationslast 30 patents

BREAKDOWN DIODES AND METHODS OF MAKING THE SAME

FABRICATING TRANSISTORS WITH IMPLANTING DOPANTS AT FIRST AND SECOND...

BIPOLAR JUNCTION TRANSISTOR WITH CONSTRICTED COLLECTOR REGION HAVIN...

FABRICATING TRANSISTORS WITH IMPLANTING DOPANTS AT FIRST AND SECOND...

DMOS TRANSISTOR HAVING THICK GATE OXIDE AND STI AND METHOD OF FABRI...

BIPOLAR JUNCTION TRANSISTOR WITH CONSTRICTED COLLECTOR REGION HAVIN...

BIPOLAR JUNCTION TRANSISTOR WITH BIASED STRUCTURE BETWEEN BASE AND...

DMOS TRANSISTOR HAVING THICK GATE OXIDE AND STI AND METHOD OF FABRI...

FABRICATING TRANSISTORS WITH IMPLANTING DOPANTS AT FIRST AND SECOND...

FABRICATING TRANSISTORS WITH A DIELECTRIC FORMED ON A SIDEWALL OF A...

METHOD OF FORMING A BICMOS SEMICONDUCTOR CHIP THAT INCREASES THE BE...

METHOD OF FORMING A BICMOS SEMICONDUCTOR CHIP THAT INCREASES THE BE...

METHOD OF IMPROVING LATERAL BJT CHARACTERISTICS IN BCD TECHNOLOGY

NON-VOLATILE MEMORY CELL HAVING A HEATING ELEMENT AND A SUBSTRATE-B...

Non-Volatile Memory Cell Having a Heating Element and a Substrate-B...

METHOD OF ENHANCING CHARGE STORAGE IN AN E2PROM CELL

SCHOTTKY JUNCTION-FIELD-EFFECT-TRANSISTOR (JFET) STRUCTURES AND MET...