Naved Siddiqui

Person

Malta, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods for GAA I/O formation by selective epi regrowth
- Patent number 12,027,607
- Issue date Jul 2, 2024
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for GAA I/O formation by selective epi regrowth
- Patent number 11,393,916
- Issue date Jul 19, 2022
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming interconnect without gate cut isolation blocking opening fo...
- Patent number 11,056,398
- Issue date Jul 6, 2021
- GLOBALFOUNDRIES U.S. INC.
- Daniel J. Jaeger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors with self-aligned and non-self-aligned con...
- Patent number 10,833,160
- Issue date Nov 10, 2020
- GLOBALFOUNDRIES Inc.
- Michael Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite sacrificial gate with etch selective layer
- Patent number 10,593,555
- Issue date Mar 17, 2020
- GLOBALFOUNDRIES Inc.
- Qun Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of making FinFET device comprising a piezoelectric liner fo...
- Patent number 10,256,152
- Issue date Apr 9, 2019
- GLOBALFOUNDRIES Inc.
- Qun Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
On-chip resistors with a tunable temperature coefficient of resistance
- Patent number 10,014,364
- Issue date Jul 3, 2018
- GLOBALFOUNDRIES Inc.
- Qun Gao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS FOR GAA I/O FORMATION BY SELECTIVE EPI REGROWTH
- Publication number 20220320318
- Publication date Oct 6, 2022
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR GAA I/O FORMATION BY SELECTIVE EPI REGROWTH
- Publication number 20210119021
- Publication date Apr 22, 2021
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING INTERCONNECT WITHOUT GATE CUT ISOLATION BLOCKING OPENING FO...
- Publication number 20210028067
- Publication date Jan 28, 2021
- GLOBALFOUNDRIES INC.
- Daniel J. Jaeger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS WITH SELF-ALIGNED AND NON-SELF-ALIGNED CON...
- Publication number 20200335591
- Publication date Oct 22, 2020
- GLOBALFOUNDRIES INC.
- Michael Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH SHAPED TRENCH AND METHODS OF FORMING T...
- Publication number 20200211903
- Publication date Jul 2, 2020
- GLOBALFOUNDRIES INC.
- JIEHUI SHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE SACRIFICIAL GATE WITH ETCH SELECTIVE LAYER
- Publication number 20190295852
- Publication date Sep 26, 2019
- GLOBALFOUNDRIES INC.
- Qun GAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE COMPRISING A PIEZOELECTRIC LINER FOR GENERATING A SUR...
- Publication number 20190027601
- Publication date Jan 24, 2019
- GLOBALFOUNDRIES INC.
- Qun Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COALESCED FIN TO REDUCE FIN BENDING
- Publication number 20190019862
- Publication date Jan 17, 2019
- GLOBALFOUNDRIES INC.
- A K M Zahidur Rahim CHOWDHURY
- H01 - BASIC ELECTRIC ELEMENTS

Naved Siddiqui

Person

Patents Grantslast 30 patents

Methods for GAA I/O formation by selective epi regrowth

Methods for GAA I/O formation by selective epi regrowth

Forming interconnect without gate cut isolation blocking opening fo...

Field-effect transistors with self-aligned and non-self-aligned con...

Composite sacrificial gate with etch selective layer

Methods of making FinFET device comprising a piezoelectric liner fo...

On-chip resistors with a tunable temperature coefficient of resistance

Patents Applicationslast 30 patents

METHODS FOR GAA I/O FORMATION BY SELECTIVE EPI REGROWTH

METHODS FOR GAA I/O FORMATION BY SELECTIVE EPI REGROWTH

FORMING INTERCONNECT WITHOUT GATE CUT ISOLATION BLOCKING OPENING FO...

FIELD-EFFECT TRANSISTORS WITH SELF-ALIGNED AND NON-SELF-ALIGNED CON...

SEMICONDUCTOR STRUCTURE WITH SHAPED TRENCH AND METHODS OF FORMING T...

COMPOSITE SACRIFICIAL GATE WITH ETCH SELECTIVE LAYER

FINFET DEVICE COMPRISING A PIEZOELECTRIC LINER FOR GENERATING A SUR...

COALESCED FIN TO REDUCE FIN BENDING