Neng-Wei Wu

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Hsinchu, TW

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Patents Grantslast 30 patents

Information Patent Grant
Method of forming semicrown-shaped stacked capacitors for dynamic r...
- Patent number 5,895,250
- Issue date Apr 20, 1999
- Vanguard International Semiconductor Corporation
- Neng-Wei Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Offset dual gate thin film field effect transistor
- Patent number 5,317,178
- Issue date May 31, 1994
- Industrial Technology Research Institute
- Neng-Wei Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating an offset dual gate thin film field effect tr...
- Patent number 5,266,507
- Issue date Nov 30, 1993
- Industrial Technology Research Institute
- Neng-Wei Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double spacer salicide MOS device and method
- Patent number 5,208,472
- Issue date May 4, 1993
- Industrial Technology Research Institute
- Wen-Doe Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a thin film field effect transistor having a drai...
- Patent number 5,151,374
- Issue date Sep 29, 1992
- Industrial Technology Research Institute
- Neng-Wei Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for making metal-polysilicon double-layered gate
- Patent number 4,908,332
- Issue date Mar 13, 1990
- Industrial Technology Research Institute
- Neng-Wei Wu
- H01 - BASIC ELECTRIC ELEMENTS