Nicholas Stephen Dellas

Person

Dallas, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
P type gallium nitride conformal epitaxial structure over thick buf...
- Patent number 12,170,328
- Issue date Dec 17, 2024
- Texas Instruments Incorporated
- Tatsuya Tominari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device with gallium nitride transistors and method of ma...
- Patent number 12,142,639
- Issue date Nov 12, 2024
- Texas Instruments Incorporated
- Qhalid R S Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device with gallium nitride transistors and method of ma...
- Patent number 11,742,390
- Issue date Aug 29, 2023
- Texas Instruments Incorporated
- Qhalid R S Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with buffer structure having carbon doped profile
- Patent number 11,508,830
- Issue date Nov 22, 2022
- Texas Instruments Incorporated
- Nicholas Stephen Dellas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a high power transistor with gate oxide barriers
- Patent number 11,424,355
- Issue date Aug 23, 2022
- Texas Instruments Incorporated
- Nicholas Stephen Dellas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buk acoustic wave resonator with guard rings having recessed space...
- Patent number 11,394,361
- Issue date Jul 19, 2022
- Texas Instruments Incorporated
- Ting-Ta Yen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method for creating double bragg mirror for tight frequency referen...
- Patent number 11,146,230
- Issue date Oct 12, 2021
- Texas Instruments Incorporated
- Nicholas S Dellas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk acoustic wave resonator on a stress isolated platform
- Patent number 10,651,817
- Issue date May 12, 2020
- Texas Instruments Incorporated
- Ting-Ta Yen
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Method to reduce frequency distribution of bulk acoustic wave reson...
- Patent number 10,135,415
- Issue date Nov 20, 2018
- Texas Instruments Incorporated
- Joel Soman
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Low-stress low-hydrogen LPCVD silicon nitride
- Patent number 10,026,817
- Issue date Jul 17, 2018
- Texas Instruments Incorporated
- Nicholas Stephen Dellas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices with specific termination angles in titanium tungsten layer...
- Patent number 10,009,001
- Issue date Jun 26, 2018
- Texas Instruments Incorporated
- Neng Jiang
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Temperature compensated bulk acoustic wave resonator with a high co...
- Patent number 9,929,714
- Issue date Mar 27, 2018
- Texas Instruments Incorporated
- Stuart M. Jacobsen
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Silicon nitride process for reduction of threshold shift
- Patent number 9,741,557
- Issue date Aug 22, 2017
- Texas Instruments Incorporated
- Nicholas Stephen Dellas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sloped termination in molybdenum layers and method of fabricating
- Patent number 9,660,603
- Issue date May 23, 2017
- Texas Instruments Incorporated
- Neng Jiang
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
High power transistor with oxide gate barriers
- Patent number 9,640,620
- Issue date May 2, 2017
- Texas Instruments Incorporated
- Nicholas Stephen Dellas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-stress low-hydrogen LPCVD silicon nitride
- Patent number 9,580,304
- Issue date Feb 28, 2017
- Texas Instruments Incorporated
- Nicholas Stephen Dellas
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Method for fabricating specific termination angles in titanium tung...
- Patent number 9,524,881
- Issue date Dec 20, 2016
- Texas Instruments Incorporated
- Neng Jiang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ELECTRONIC DEVICE WITH GALLIUM NITRIDE TRANSISTORS AND METHOD OF MA...
- Publication number 20230343829
- Publication date Oct 26, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Qhalid RS Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH BUFFER STRUCTURE HAVING CARBON DOPED PROFILE
- Publication number 20230068191
- Publication date Mar 2, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Nicholas Stephen Dellas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Technique for GaN Epitaxy on Insulating Substrates
- Publication number 20220246423
- Publication date Aug 4, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Nicholas S. DELLAS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P TYPE GALLIUM NITRIDE CONFORMAL EPITAXIAL STRUCTURE OVER THICK BUF...
- Publication number 20220190148
- Publication date Jun 16, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Tatsuya Tominari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH BUFFER STRUCTURE HAVING CARBON DOPED PROFILE
- Publication number 20220181466
- Publication date Jun 9, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Nicholas Stephen Dellas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE WITH GALLIUM NITRIDE TRANSISTORS AND METHOD OF MA...
- Publication number 20220140087
- Publication date May 5, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Qhalid RS Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR CREATING DOUBLE BRAGG MIRROR FOR TIGHT FREQUENCY REFEREN...
- Publication number 20210067126
- Publication date Mar 4, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Nicholas S. Dellas
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Buk Acoustic Wave Resonator with Guard Rings having Recessed Space...
- Publication number 20200274514
- Publication date Aug 27, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Ting-Ta Yen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
GALLIUM NITRIDE DEVICES INCLUDING A TUNNEL BARRIER LAYER
- Publication number 20200203520
- Publication date Jun 25, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Nicholas S. DELLAS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bulk acoustic Wave Resonator on a Stress Isolated Platform
- Publication number 20190207581
- Publication date Jul 4, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Ting-Ta Yen
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
THERMAL TREATED SEMICONDUCTOR/GATE DIELECTRIC INTERFACE FOR GROUP I...
- Publication number 20170194472
- Publication date Jul 6, 2017
- TEXAS INSTRUMENTS INCORPORATED
- NICHOLAS STEPHEN DELLAS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO REDUCE FREQUENCY DISTRIBUTION OF BULK ACOUSTIC WAVE RESON...
- Publication number 20170179914
- Publication date Jun 22, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Joel Soman
- G01 - MEASURING TESTING
Information Patent Application
LOW-STRESS LOW-HYDROGEN LPCVD SILICON NITRIDE
- Publication number 20170133472
- Publication date May 11, 2017
- TEXAS INSTRUMENTS INCORPORATED
- NICHOLAS STEPHEN DELLAS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES WITH SPECIFIC TERMINATION ANGLES IN TITANIUM TUNGSTEN LAYER...
- Publication number 20170063325
- Publication date Mar 2, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Neng Jiang
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
LOW-STRESS LOW-HYDROGEN LPCVD SILICON NITRIDE
- Publication number 20160325987
- Publication date Nov 10, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Nicholas Stephen Dellas
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
METHOD FOR FABRICATING SPECIFIC TERMINATION ANGLES IN TITANIUM TUNG...
- Publication number 20160322235
- Publication date Nov 3, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Neng Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SLOPED TERMINATION IN MOLYBDENUM LAYERS AND METHOD OF FABRICATING
- Publication number 20160300693
- Publication date Oct 13, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Neng Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMAL TREATED SEMICONDUCTOR/GATE DIELECTRIC INTERFACE FOR GROUP I...
- Publication number 20160126330
- Publication date May 5, 2016
- TEXAS INSTRUMENTS INCORPORATED
- NICHOLAS STEPHEN DELLAS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEMPERATURE COMPENSATED BULK ACOUSTIC WAVE RESONATOR WITH A HIGH CO...
- Publication number 20150295556
- Publication date Oct 15, 2015
- Texas Instrument Incorporated
- Stuart M. Jacobsen
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
THROUGH SILICON VIA FILLING
- Publication number 20130249096
- Publication date Sep 26, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Mona Eissa
- H01 - BASIC ELECTRIC ELEMENTS

Nicholas Stephen Dellas

Person

Patents Grantslast 30 patents

P type gallium nitride conformal epitaxial structure over thick buf...

Electronic device with gallium nitride transistors and method of ma...

Electronic device with gallium nitride transistors and method of ma...

Transistor with buffer structure having carbon doped profile

Method of making a high power transistor with gate oxide barriers

Buk acoustic wave resonator with guard rings having recessed space...

Method for creating double bragg mirror for tight frequency referen...

Bulk acoustic wave resonator on a stress isolated platform

Method to reduce frequency distribution of bulk acoustic wave reson...

Low-stress low-hydrogen LPCVD silicon nitride

Devices with specific termination angles in titanium tungsten layer...

Temperature compensated bulk acoustic wave resonator with a high co...

Silicon nitride process for reduction of threshold shift

Sloped termination in molybdenum layers and method of fabricating

High power transistor with oxide gate barriers

Low-stress low-hydrogen LPCVD silicon nitride

Method for fabricating specific termination angles in titanium tung...

Patents Applicationslast 30 patents

ELECTRONIC DEVICE WITH GALLIUM NITRIDE TRANSISTORS AND METHOD OF MA...

TRANSISTOR WITH BUFFER STRUCTURE HAVING CARBON DOPED PROFILE

Technique for GaN Epitaxy on Insulating Substrates

P TYPE GALLIUM NITRIDE CONFORMAL EPITAXIAL STRUCTURE OVER THICK BUF...

TRANSISTOR WITH BUFFER STRUCTURE HAVING CARBON DOPED PROFILE

ELECTRONIC DEVICE WITH GALLIUM NITRIDE TRANSISTORS AND METHOD OF MA...

METHOD FOR CREATING DOUBLE BRAGG MIRROR FOR TIGHT FREQUENCY REFEREN...

Buk Acoustic Wave Resonator with Guard Rings having Recessed Space...

GALLIUM NITRIDE DEVICES INCLUDING A TUNNEL BARRIER LAYER

Bulk acoustic Wave Resonator on a Stress Isolated Platform

THERMAL TREATED SEMICONDUCTOR/GATE DIELECTRIC INTERFACE FOR GROUP I...

METHOD TO REDUCE FREQUENCY DISTRIBUTION OF BULK ACOUSTIC WAVE RESON...

LOW-STRESS LOW-HYDROGEN LPCVD SILICON NITRIDE

DEVICES WITH SPECIFIC TERMINATION ANGLES IN TITANIUM TUNGSTEN LAYER...

LOW-STRESS LOW-HYDROGEN LPCVD SILICON NITRIDE

METHOD FOR FABRICATING SPECIFIC TERMINATION ANGLES IN TITANIUM TUNG...

SLOPED TERMINATION IN MOLYBDENUM LAYERS AND METHOD OF FABRICATING

THERMAL TREATED SEMICONDUCTOR/GATE DIELECTRIC INTERFACE FOR GROUP I...

TEMPERATURE COMPENSATED BULK ACOUSTIC WAVE RESONATOR WITH A HIGH CO...

THROUGH SILICON VIA FILLING